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vacancy-type extended defects

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Book Chapter
Series: AIPP Books, Principles
Published: February 2023
10.1063/9780735425033_005
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
... (STEM) observation of unusual vacancy-related point-defect complexes that play a crucial role in n-type β-Ga2O3 ( Johnson et al., 2019 ). The applications of Ga2O3 in power electronics, field-effect transistors, Schottky-barrier diodes...
Book Chapter
Series: AIPP Books, Principles
Published: March 2023
10.1063/9780735425590_005
EISBN: 978-0-7354-2559-0
ISBN: 978-0-7354-2556-9
... atomic arrangement,” ( Hower and Gupta, 1979 ) and “zinc vacancy and/or oxygen interstitial related defects” ( Gupta and Carlson, 1985 and Carlsson et al., 2003 ). However, the origin remained controversial; to obtain a decisive conclusion, an intensive study on a ZnO [0001] Σ7 GB...
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
10.1063/9780735425033_006
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
... with impurities and native defects such as vacancies, as discussed in Chap. 5. The complex of Hi and an oxygen vacancy, VO, leads to substitutional HO, which also generally acts as a shallow donor; it has been suggested to be responsible for unintentional...
Book Chapter
Series: AIPP Books, Principles
Published: March 2023
0
EISBN: 978-0-7354-2559-0
ISBN: 978-0-7354-2556-9
.... , “ Strain engineering and one-dimensional organization of metal-insulator domains in single-crystal vanadium dioxide beams ,” Nat. Nanotechnol.   4 , 732 – 737 ( 2009 ). 10.1038/nnano.2009.266 Cao , J. , Gu , Y. , Fan , W.   et al. , “ Extended mapping and exploration of the diagram...
Book Chapter
Series: AIPP Books, Principles
Published: March 2023
10.1063/9780735425590_002
EISBN: 978-0-7354-2559-0
ISBN: 978-0-7354-2556-9
... in a material. These include introducing defects such as vacancies, chemical doping, and applying interfacial strain. These different ways of straining a material have their own merits. The application of high pressure produces a uniform strain in the material. Chemical doping creates a highly localized strain...
Book
Book Cover Image
Series: AIPP Books, Principles
Published: March 2023
10.1063/9780735425590
EISBN: 978-0-7354-2559-0
ISBN: 978-0-7354-2556-9
Book Chapter
Series: AIPP Books, Principles
Published: March 2023
10.1063/9780735425590_004
EISBN: 978-0-7354-2559-0
ISBN: 978-0-7354-2556-9
... strain or the presence of defects ( Marezio et al., 1972 ; and Guo et al., 2011 ). In the M2 phase, the V-V chains are either a zig-zag or dimers. Real space lattice vector transformation matrix from M1 phase to R phase and M2 to R phase ( Marezio...
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
10.1063/9780735425033_003
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
... releases a stable ethylene group, thereby minimizing the contamination of the growing layer with hydrogen and carbon. Both elements are common impurities in MOCVD-grown epilayers as they originate from the metalorganic precursors. Control of these impurities and other native defects such as Ga vacancies...
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
10.1063/9780735425033_001
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
... and maturity achieved through material growth, device development, and defect optimization to reach its predicted performance. This chapter provides an overview of power semiconductors, particularly focusing on β-Ga2O3, its current progress in growth and devices, existing challenges...
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
10.1063/9780735425033_004
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
... for improved film quality on the cleavage plane orientations that currently suffer from lower growth rates and extended defects in MBE grown films. Finally, the implementation of these different demonstrations towards MBE grown device structures could ultimately help realize more efficient devices based...
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
10.1063/9780735425033_008
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
.... An essential requirement of all power semiconductor devices is the ability to withstand a large terminal voltage with minimal leakage current in the off-state. High-voltage SBD structures contain a thick, lightly doped (typically n-type due to the higher mobility of electrons) drift layer formed...
Book Chapter
Series: AIPP Books, Methods
Published: December 2022
10.1063/9780735425422_002
EISBN: 978-0-7354-2542-2
ISBN: 978-0-7354-2540-8
... the effect of defects. The interaction of defects with free charge carriers in 2D materials results in modifying their emission spectra, which could be used to obtain information related to the nature and number of defects. The intrinsic chalcogenide vacancies present in TMDCs can lead to n-type doping...
Book
Book Cover Image
Series: AIPP Books, Methods
Published: December 2022
10.1063/9780735425422
EISBN: 978-0-7354-2542-2
ISBN: 978-0-7354-2540-8
Book Chapter
Series: AIPP Books, Methods
Published: December 2022
10.1063/9780735425422_001
EISBN: 978-0-7354-2542-2
ISBN: 978-0-7354-2540-8
..., the presence of defects, and vacancies or adsorbed molecules significantly affect these material properties, advanced analytical techniques are essential to address its morphological and functional properties ( Anand et al., 2021 ). Microscopy, atomic force microscopy (AFM), scanning electron...
Book Chapter
Series: AIPP Books, Methods
Published: November 2022
10.1063/9780735424197_006
EISBN: 978-0-7354-2419-7
ISBN: 978-0-7354-2416-6
... curved channels via a one-dimensional zigzag pathway along the b direction of the unit cell, effectively hemmed in by Fe cations and the phosphate polyanion. Migration in other directions is only possible via Li Fe ′ anti-site defects ( Adams, 2010 ). One important metric that can...
Book Chapter
Series: AIPP Books, Methods
Published: December 2022
10.1063/9780735425422_004
EISBN: 978-0-7354-2542-2
ISBN: 978-0-7354-2540-8
... λ = 2 d sin θ , where n is an integer, λ is the wavelength, d is the distance between atomic planes, and θ is the angle of diffraction. The intensity of the diffracted waves is determined by the type and arrangement of atoms in the crystal structure. When...
Book
Book Chapter
Series: AIPP Books, Methods
Published: August 2022
10.1063/9780735422490_009
EISBN: 978-0-7354-2249-0
ISBN: 978-0-7354-2246-9
... agree well with the experimental spectra, although the weight of the satellite is smaller in the theoretical calculations. However, as shown for SrVO3 and discussed more in detail below, oxygen vacancies in the material can lead to an overestimation of the weight of the satellites in the PES...
Book
Book Cover Image
Series: AIPP Books, Methods
Published: August 2022
10.1063/9780735422490
EISBN: 978-0-7354-2249-0
ISBN: 978-0-7354-2246-9
Book
Book Cover Image
Series: AIPP Books, Principles
Published: May 2022
10.1063/9780735424678
EISBN: 978-0-7354-2467-8
ISBN: 978-0-7354-2464-7