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1-20 of 126 Search Results for
vacancies
Images
in Defects in β-Ga2O3: Theory and Microscopic Studies
> Ultrawide Bandgap β-Ga2O3 SemiconductorTheory and Applications
Published: February 2023
FIG. 5.2 Formation energy diagram of O interstitials and O vacancies, shown for (a) Ga-rich and (b) O-rich conditions. Adapted with permission from Ingebrigtsen et al., APL Mater. 7 (2), 022510 (2019). Copyright 2019 AIP Publishing LLC. More about this image found in Formation energy diagram of O interstitials and O vacancies, shown for (a) ...
Images
in Defects in β-Ga2O3: Theory and Microscopic Studies
> Ultrawide Bandgap β-Ga2O3 SemiconductorTheory and Applications
Published: February 2023
FIG. 5.5 Three configurations of split vacancies: V Ga i b , V Ga i c , and V Ga i a . The interstitial sites (ia, ib, and ic) involved in split-vacancy formation are indicated in Fig. 5.1 . The vacant Ga sites adjacent to the displaced interstitial Ga are highlighted with dashed circles; O species left with dangling bonds are indicated for each vacancy configuration. Adapted with permission from Ingebrigtsen et al., APL Mater. 7 (2), 022510 (2019). Copyright 2019 AIP Publishing LLC. More about this image found in Three configurations of split vacancies: V Ga i b , V ...
Images
in Radiation Effects on β-Ga2O3 Materials and Devices
> Ultrawide Bandgap β-Ga2O3 SemiconductorTheory and Applications
Published: February 2023
FIG. 12.5 Formation energy diagrams for (a) oxygen vacancies reproduced from Varley ( 2010 ). (b) Formation energy diagrams for gallium vacancies in β-Ga2O3. Reproduced with permission from Ingebrigtsen et al., APL Mater. 7 (2), 022510 (2018). Copyright 2018 Author(s), licensed under a Creative Commons Attribution (CC BY) license. More about this image found in Formation energy diagrams for (a) oxygen vacancies reproduced from Varley (...
Images
in Defects in β-Ga2O3: Theory and Microscopic Studies
> Ultrawide Bandgap β-Ga2O3 SemiconductorTheory and Applications
Published: February 2023
FIG. 5.6 Migration mechanism of the tetrahedral vacancy β-Ga2O3. The vacancy on the tetrahedral site is metastable: a more favorable configuration is formed by moving a neighboring substitutional GaI atom to an interstitial site with octahedral coordination ( V Ga i b ). Reproduced with permission from Varley et al., J. Phys. Condens. Matter 23 (33), 334212 (2011). Copyright 2011 IOP Publishing. More about this image found in Migration mechanism of the tetrahedral vacancy β-Ga2O3...
Images
in Radiation Effects on β-Ga2O3 Materials and Devices
> Ultrawide Bandgap β-Ga2O3 SemiconductorTheory and Applications
Published: February 2023
FIG. 12.4 (a) Ga and (b) O vacancy distributions calculated by TRIM simulations for a 10 µm thick β-Ga2O3 layer irradiated by protons with energies ranging from 0.01 to 100 MeV showing uniform defect generation for higher irradiation energies. More about this image found in (a) Ga and (b) O vacancy distributions calculated by TRIM simulations for a...
Images
in Defects in β-Ga2O3: Theory and Microscopic Studies
> Ultrawide Bandgap β-Ga2O3 SemiconductorTheory and Applications
Published: February 2023
FIG. 5.1 Illustration of the β-Ga2O3 structure with the interstitial sites involved in split-vacancy formation indicated by black crosses. More about this image found in Illustration of the β-Ga2O3 structure with the inters...
Images
in Defects in β-Ga2O3: Theory and Microscopic Studies
> Ultrawide Bandgap β-Ga2O3 SemiconductorTheory and Applications
Published: February 2023
FIG. 5.4 Formation energy diagrams of Ga interstitials, Ga antisites, and gallium vacancies for (a) Ga-rich and (b) O-rich conditions. Adapted with permission from Ingebrigtsen et al., APL Mater. 7 (2), 022510 (2019). Copyright 2019 AIP Publishing LLC. More about this image found in Formation energy diagrams of Ga interstitials, Ga antisites, and gallium va...
Book Chapter
Series: AIPP Books, Principles
Published: March 2023
10.1063/9780735425590_005
EISBN: 978-0-7354-2559-0
ISBN: 978-0-7354-2556-9
... properties directly and others indirectly. In the indirect cases, the strain has effects on other related phenomena such as the formation of vacancies or the segregation of dopant elements. Another example where strain can play a significant role is in ferroelectrics. Spontaneous lattice strain is correlated...
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
10.1063/9780735425033_005
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
... with scanning transmission electron microscopy (STEM), we elucidate the properties of point defects in gallium oxide. We discuss the electronic behavior of O interstitials, O vacancies, Ga interstitials, Ga vacancies, and hydrogenated Ga vacancies. Gallium vacancies, in particular, have low formation energies...
Book Chapter
Series: AIPP Books, Principles
Published: March 2023
0
EISBN: 978-0-7354-2559-0
ISBN: 978-0-7354-2556-9
.... , Aetukuri , N. et al. , “ Suppression of metal-insulator transition transition in VO2 by electric field-induced oxygen vacancy formation ,” Science 339 , 1402 – 1405 ( 2013 ). 10.1126/science.1230512 Jia , Q. , Grenzer , J. , He , H. et al. , “ 3D local...
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
10.1063/9780735425033_012
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
... to displacement energy, where higher displacement energies result in fewer Frenkel pairs. In β-Ga2O3, the sources of these Frenkel pairs are the displaced Ga or O atoms from the lattice, thus forming Ga and O vacancies and interstitials. This damage to the lattice can result...
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
0
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
... , F. , “ Interplay of vacancies, hydrogen, and electrical compensation in irradiated and annealed n-type β-Ga2O3 ,” J. Appl. Phys. 129 , 165702 ( 2021 ). 10.1063/5.0042518 Kaun , S. W. , Wu , F. , and Speck , J. S. , “ β-(AlxGa1...
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
0
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
.... K. , and Giles , N. C. , “ Gallium vacancies in β-Ga2O3 crystals ,” Appl. Phys. Lett. 110 ( 20 ), 202104 ( 2017 ). 10.1063/1.4983814 Kim , J. , Pearton , S. J. , Fares , C. , Yang , J. , Ren , F. , Kim , S. , and Polyakov , A. Y...
Book Chapter
Series: AIPP Books, Principles
Published: March 2023
10.1063/9780735425590_002
EISBN: 978-0-7354-2559-0
ISBN: 978-0-7354-2556-9
... in a material. These include introducing defects such as vacancies, chemical doping, and applying interfacial strain. These different ways of straining a material have their own merits. The application of high pressure produces a uniform strain in the material. Chemical doping creates a highly localized strain...
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
0
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
.... , and Giles , N. C. , “ Gallium vacancies in β-Ga2O3 crystals ,” Appl. Phys. Lett. 110 , 202104 ( 2017 ). 10.1063/1.4983814 Kirchner , K. , Gruber , T. H. , Reuß , F. , Thonke , K. , Waag , A. , Gießen , C. , and Heuken , M. , “ MOVPE growth...
Book Chapter
Series: AIPP Books, Principles
Published: March 2023
10.1063/9780735425590_004
EISBN: 978-0-7354-2559-0
ISBN: 978-0-7354-2556-9
... transition transition in VO2 by electric field-induced oxygen vacancy formation ,” Science 339 , 1402 – 1405 ( 2013 ). 10.1126/science.1230512 Jia , Q. , Grenzer , J. , He , H. et al. , “ 3D local manipulation of the metal–insulator transition behavior in VO2...
Book
Series: AIPP Books, Principles
Published: March 2023
10.1063/9780735425590
EISBN: 978-0-7354-2559-0
ISBN: 978-0-7354-2556-9
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
10.1063/9780735425033_006
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
... with impurities and native defects such as vacancies, as discussed in Chap. 5. The complex of Hi and an oxygen vacancy, VO, leads to substitutional HO, which also generally acts as a shallow donor; it has been suggested to be responsible for unintentional...
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
0
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
... , A. , and Van de Walle , C. G. , “ Hydrogenated cation vacancies in semiconducting oxides ,” J. Phys.: Condens. Matter 23 ( 33 ), 334212 ( 2011 ). 10.1088/0953-8984/23/33/334212 Varley , J. B. , Perron , A. , Lordi , V. , Wickramaratne , D. , and Lyons , J. L. , “ Prospects...
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
10.1063/9780735425033_003
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
... releases a stable ethylene group, thereby minimizing the contamination of the growing layer with hydrogen and carbon. Both elements are common impurities in MOCVD-grown epilayers as they originate from the metalorganic precursors. Control of these impurities and other native defects such as Ga vacancies...
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