... a simple, one-dimensional example of extension of a rod of initial length l₀ and uniform cross-sectional area A₀ under a uniaxial force F_a (see Fig. 1.1 ). Let the length of the rod change to l_f due...

... ( 2020 ). 10.1038/s43246-020-00072-4 Laan , D. C. , Haugan , T. J. , and Barnes , P. N. , “ Effect of a compressive uniaxial strain on the critical current density of grain boundaries in superconducting YBa₂Cu₃O_7-δ films ,” Phys. Rev. Lett.   103...

.... , Rossler , V. , and Cardona , M. , “ Indirect exciton fine structure in GaP and the effect of uniaxial stress ,” Phys. Rev. B   18 , 5590 – 5605 ( 1978 ). 10.1103/PhysRevB.18.5590 Kohn , W. and Sham , L. J. , “ Self-consistent equations including exchange and correlation effects...

... uniaxial tensile strain. Both M₁ and M₂ belong to the monoclinic insulating phase with differing resistivity. Due to close similarity between the structures of M₁ and M₂, it is difficult to index them precisely. Structural examination via Laue pattern revealed...

... by explicitly incorporating nucleation events ,” Scr. Mater.   43 ( 10 ), 935 – 942 ( 2000 ). 10.1016/S1359-6462(00)00517-0 Tagantsev , A. , “ The role of the background dielectric susceptibility in uniaxial ferroelectrics ,” Ferroelectrics   69 ( 1 ), 321 – 323 ( 1986 ). 10.1080...

... single crystals at high temperature under a uniaxial load. As a result, a secondary-phase-free atomically well-bonded GB can be obtained [Fig. 5.5(b) ]. By properly controlling the GB orientation, the GB atomic arrangement as well as the position of the dopant can be clearly visualized ( Sato et al...

... electronic structure changes cannot be generalized to all the materials. The bandgaps in elemental semiconductors like silicon and germanium decrease monotonically with increasing compressive strain. But, a uniaxial strain along the [111] direction is known to lead to an indirect-direct band gap transition...

... of Minnesota , Minneapolis, MN, 1991 ), p. 819 . 6 Berŕehar , J. , Caroli , C. , Lapersonne-Meyer , C. , and Schott , M. , “ Surface patterns on single-crystal films under uniaxial stress: Experimental evidence for Grinfeld instability ,” Phys. Rev. B   46 , 13487 – 13495 ( 1992...

... of semiconductors ,” J. Appl. Phys.   77 , 5476 – 5477 ( 1995 ). 10.1063/1.359248 Humphreys , R. G. , Rossler , V. , and Cardona , M. , “ Indirect exciton fine structure in GaP and the effect of uniaxial stress ,” Phys. Rev. B   18 , 5590 – 5605 ( 1978 ). 10.1103/PhysRevB.18.5590...

... on their physical nature, could be either of in-plane biaxial and/or longitudinal uniaxial out-of-plane. For a specific semiconductor, one type of strain could dominate the other. For example, in the case of Si, both of these strains split Si's conduction band; however, for germanium (Ge), only the longitudinal...

... Driven Instabilities in Crystals: Mathematical Models and Physical Manifestations ( University of Minnesota , Minneapolis, MN, 1991 ), p. 819 . 6 Berŕehar , J. , Caroli , C. , Lapersonne-Meyer , C. , and Schott , M. , “ Surface patterns on single-crystal films under uniaxial...

.... , “ Phase field modeling of simultaneous nucleation and growth by explicitly incorporating nucleation events ,” Scr. Mater.   43 ( 10 ), 935 – 942 ( 2000 ). 10.1016/S1359-6462(00)00517-0 Tagantsev , A. , “ The role of the background dielectric susceptibility in uniaxial ferroelectrics...

... lattice mismatch, doping, and direct mechanical application. The current subsection elucidates the evaluation of mechanical properties by direct application of strain. Mechanical properties such as Young's modulus, Poisson's ratio, and ultimate strength can be evaluated by performing uniaxial/biaxial...

... Zant , H. S. J. , Heine , T.   , “ Precise and reversible band gap tuning in single-layer MoSe₂ by uniaxial strain ,” Nanoscale   8 ( 5 ), 2589 – 2593 ( 2016 ). doi:10.1039/C5NR08219F Jaouen , K. , Cornut , R. , Ausserré , D. , Campidelli , S. , and Derycke...

... the mechanical properties of the 2D material, especially elastic properties, this test is comparable to uniaxial tension for bulk materials. The bulging test involves applying pressure to one side of a freestanding thin film “window,” which causes it to deflect. Specifically, a 2D material film/membrane...

... MoS₂ under uniaxial tensile strain, both the A and I exciton peak redshifts linearly with strain. Under tensile strain, a decrease in PL intensity of A exciton was observed for 1L-MoS₂, indicating direct to indirect bandgap transition, significantly decreasing the PLQY ( Dhakal et al...

... that theoretically the degeneracy is lifted only when the crystal symmetry is broken, such as through the presence of uniaxial strain, which can be caused by surface roughness interactions with the substrate, the presence of residual contaminants at WSe₂/SiO₂ interface and/or residues deposited...