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1-20 of 395 Search Results for
trapping
Book Chapter
Series: AIPP Books, Principles
Published: September 2022
10.1063/9780735425118_005
EISBN: 978-0-7354-2511-8
ISBN: 978-0-7354-2509-5
...harmonic-oscillator potential Townes solitons collapse suppression Vakhitov-Kolokolov criterion splitting instability hidden vorticity saturable nonlinearity expulsive potential;bound states in continuum Stabilization of 3D and 2D Fundamental Solitons and Vortices by the Trapping Potential...
Book Chapter
Series: AIPP Books, Principles
Published: September 2022
10.1063/9780735425118_006
EISBN: 978-0-7354-2511-8
ISBN: 978-0-7354-2509-5
... dark solitons dispersion managenement Townes soliton soliton management The Basic Setting The formulation The basic model providing self-trapping of various 2D and 3D modes in the effective nonlinear trapping potential is (Borovkova et al. 2011a ; 2011b ) (6.1) i ψ t + 1 2...
Images
in Radiation Effects on β-Ga2O3 Materials and Devices
> Ultrawide Bandgap β-Ga2O3 SemiconductorTheory and Applications
Published: February 2023
FIG. 12.8 (a) Shows the carrier removal and total trap concentrations as a function of fluence to directly compare both the carrier removal and trap introduction rates, revealing the close agreement between the two. (b) and (c) Show the individual trap introduction as a function of fluence to identify the states that are most strongly increasing in concentration due to the proton damage and therefore are likely to be the main compensating defects causing the carrier reduction. (d) Shows the relative introduction rates for each trap more clearly on a linear scale with the dominating compensating center at EC-2.0 eV responsible for ∼75% of the introduced compensators (McGlone et al., 2022). More about this image found in (a) Shows the carrier removal and total trap concentrations as a function o...
Images
in Radiation Effects on β-Ga2O3 Materials and Devices
> Ultrawide Bandgap β-Ga2O3 SemiconductorTheory and Applications
Published: February 2023
FIG. 12.10 Schematic summaries of trap concentration distributions for β-Ga2O3 grown by (a) EFG ( Farzana et al., 2019a ) and (b) PAMBE ( Farzana et al., 2019b ); blue lines indicate trap concentrations before radiation, and red lines indicate the increase in the concentration of each trap after irradiation by 1 MeV equivalent neutrons with a fluence of 1.7 × 1015 cm−2. Reproduced with permission from Farzana et al., APL Mater. 7 (2), 022502 (2019). Copyright 2019 Author(s), licensed under a Creative Commons Attribution (CC BY) license and Farzana et al., APL Mater. 7 (12), 121102 (2019). Copyright 2019 Author(s), licensed under a Creative Commons Attribution (CC BY) license. More about this image found in Schematic summaries of trap concentration distributions for β-Ga2...
Images
in Radioactivity, Radiation, and Particle Physics in General
> The International Handbook of Physics Education Research: Learning Physics
Published: March 2023
FIG. 9.1 Students' conceptions about climate change resulting from the greenhouse effect (top) via sun rays (a) and heat rays (b) and by the ozone hole (bottom) via sun rays (a), perhaps because they become trapped beneath the ozone layer (b). Modified from Figs. 5 and 6 of Niebert and Gropeng... More about this image found in Students' conceptions about climate change resulting from the greenhouse ef...
Images
in Radiation Effects on β-Ga2O3 Materials and Devices
> Ultrawide Bandgap β-Ga2O3 SemiconductorTheory and Applications
Published: February 2023
FIG. 12.7 (a) C–V extracted doping profiles for pre and post-irradiation on the same Ni/β-Ga2O3 Schottky diode revealing a monotonic increase in carrier compensation as a function of proton fluence. (b) DLTS spectra obtained after each proton fluence, noting the pre-irradiation DLTS scan with the EC-0.4 eV trap (black arrow) and irradiation-induced traps EC-0.35 eV, EC-0.6 eV, and EC-0.7 eV (red arrows); (c) SSPC spectra at each proton fluence point, where step heights are proportional to the concentration of each trap, and the energy levels associated with each SSPC onset are obtained from fitting the (d) optical cross section obtained from fitting the DLOS photocapacitance transient analysis to the Pässler model ( Pässler, 2004 ; and Ghadi et al., 2020b ). Each of the DLOS traps were present prior to radiation, with the EC–2.0 eV dominating the carrier compensation, also verified using lighted C-V measurements. (d) Reproduced with permission from Ghadi et al., APL Mater. 8 (2), 021111 (2020). Copyright 2020 Author(s), licensed under a Creative Commons Attribution (CC BY) license. More about this image found in (a) C–V extracted doping profiles for pre...
Images
in Transistors in Bioelectronics
> Introduction to BioelectronicsMaterials, Devices, and Applications
Published: November 2022
FIG. 4.13 Hysteresis effect in transfer characteristics due to charge trapping that occur in the transistor. More about this image found in Hysteresis effect in transfer characteristics due to charge trapping that o...
Images
in Dopants in β-Ga2O3: From Theory to Experiments
> Ultrawide Bandgap β-Ga2O3 SemiconductorTheory and Applications
Published: February 2023
FIG. 6.15 (a) Atomic structures and (b) configuration coordinate diagrams for self-trapped hole (STH) states on different O sites in Ga2O3. (c) Calculated photoluminescence spectra. Adapted with permission from Frodason et al., J. Appl. Phys. 127 (7), 075701 (2020). Copyright 2020 AIP Publishing LLC. More about this image found in (a) Atomic structures and (b) configuration coordinate diagrams for self-tr...
Images
Published: February 2023
FIG. 9.10 (a) Cox2/C2 − 1 vs gate voltage plot and (b) extracted interface trap density of Au/Ti/Al2O3/β-Ga2O3 MOSCAPs with planar, pyramid, trapezoid-like, and blade structures formed by MacEtch. Reprinted with permission from Huang et al., ACS Nano 13 (8), 8784–8792 (2019a). Copyright 2019 American Chemical Society. More about this image found in (a) Cox2/C2 − 1 vs gate voltage plot and (b) extracte...
Book Chapter
Series: AIPP Books, Principles
Published: March 2023
0
EISBN: 978-0-7354-2439-5
ISBN: 978-0-7354-2436-4
.... , Bhattacharya , S. , Chen , X. , Barizuddin , S. , Gangopadhyay , S. , and Gillis , K. D. , “ A microfluidic cell trap device for automated measurement of quantal catecholamine release from cells ,” Lab Chip 9 , 3442 – 3446 ( 2009 ). 10.1039/B913216C Gupta , A. , Sundriyal...
Images
in Dopants in β-Ga2O3: From Theory to Experiments
> Ultrawide Bandgap β-Ga2O3 SemiconductorTheory and Applications
Published: February 2023
FIG. 6.5 Silicon dopant energy level detected from (a) temperature-dependent Hall concentration fitted with two-donor model showing a shallow donor level at 40 meV and deep donor level at 150 meV ( Feng et al., 2020 ). (b) The secondary level was also observed from admittance spectroscopy (capacitance–frequency at different temperatures). The arrow indicates the presence of inflection point in the C–f plot associated with the deep trap emission that causes dispersion at higher frequencies ( Neal et al., 2017 ). More about this image found in Silicon dopant energy level detected from (a) temperature-dependent Hall co...
Images
in Delta-Doped Transistors with β-Ga2O3
> Ultrawide Bandgap β-Ga2O3 SemiconductorTheory and Applications
Published: February 2023
FIG. 11.6 Combined Arrhenius plot including bulk samples for accurately comparing reported trap levels. The EC–0.7 eV level measured here and the previously reported E2* level agree closely in the Arrhenius space and are linked to an intrinsic defect. The disappearance of the EC–0.8 eV level in the 600 nm buffer sample indicates it is related to the Fe from the substrate, which is consistent with other reports. Reproduced with permission from McGlone et al., Appl. Phys. Lett. 115 , 153501 (2019). Copyright 2019 AIP Publishing LLC. More about this image found in Combined Arrhenius plot including bulk samples for accurately comparing rep...
Book Chapter
Series: AIPP Books, Professional
Published: March 2023
10.1063/9780735425514_022
EISBN: 978-0-7354-2551-4
ISBN: 978-0-7354-2548-4
... recognize her questions as valid probes of conceptual understanding, but at the time Viennot heard objections that they were “traps” for students. She argued that it was essential to pose questions different from those students had become familiar with in conventional teaching. In this regard, she...
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
10.1063/9780735425033_012
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
... physical defect configurations and sources are discussed, along with the sensitivity of specific traps to different types of radiation. Additionally, some initial studies on the impact of radiation on transistor static change and metastability are reviewed, which will be critical to device design...
Book Chapter
Series: AIPP Books, Professional
Published: March 2023
10.1063/9780735425477_017
EISBN: 978-0-7354-2547-7
ISBN: 978-0-7354-2544-6
... any complex mathematical process, such as solving a set of simultaneous equations, can be reduced to a single line of software. This calculation trap in instruction has a long been recognized within physics (e.g., Oerlein, 1937 ; Crane, 1966 ; and Crane, 1969 ), but its depth was generally...
Book Chapter
Series: AIPP Books, Methods
Published: March 2023
10.1063/9780735425743_004
EISBN: 978-0-7354-2574-3
ISBN: 978-0-7354-2572-9
... decreases while that of the hydrogen increases. If the flow is immediately reversed, some of the methane and hydrogen remaining in the bed will go to the regeneration exhaust. The “trapping” effect could be even more if intra-particle diffusion is substantial. To improve hydrogen yield and purity...
Book Chapter
Series: AIPP Books, Principles
Published: March 2023
10.1063/9780735424395_007
EISBN: 978-0-7354-2439-5
ISBN: 978-0-7354-2436-4
... reflections R1 and R2 and refraction by the sphere, resulting in a net upward force FA on the particle. Trapping and optically manipulating dielectric particles ( Ashkin et al., 1986 ; and Grier, 2003 ) in liquids/air can be achieved using...
Book Chapter
Series: AIPP Books, Principles
Published: March 2023
10.1063/9780735424395_001
EISBN: 978-0-7354-2439-5
ISBN: 978-0-7354-2436-4
.... , Bhattacharya , S. , Chen , X. , Barizuddin , S. , Gangopadhyay , S. , and Gillis , K. D. , “ A microfluidic cell trap device for automated measurement of quantal catecholamine release from cells ,” Lab Chip 9 , 3442 – 3446 ( 2009 ). 10.1039/B913216C Gupta , A. , Sundriyal...
Book Chapter
Series: AIPP Books, Methods
Published: March 2023
10.1063/9780735425743_001
EISBN: 978-0-7354-2574-3
ISBN: 978-0-7354-2572-9
... and maintenance, payment of royalties and taxes; they are all on the individual scenario (well) basis. A gate-to-gate boundary of the environmental analysis is used to measure the plant-level GWP for manufacturing l ton of chemicals, which is a relative measure of how much radiated heat is trapped by emissions...
Book Chapter
Series: AIPP Books, Principles
Published: March 2023
0
EISBN: 978-0-7354-2439-5
ISBN: 978-0-7354-2436-4
... ), 1351 – 1354 ( 1977 ). 10.1103/PhysRevLett.38.1351 Ashkin , A. , Dziedzic , J. M. , Bjorkholm , J. E. , and Chu , S. , “ Observation of a single-beam gradient force optical trap for dielectric particles ,” Opt. Lett. 11 ( 5 ), 288 –290 ( 1986 ). 10.1364/OL.11.000288...
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