FIG. 8.6 Microstructural evolution in a thin film system with isotropic elasticity, the far-field composition is 0.05 leading to growth along with film break-up. From the top left, the microstructures correspond to (non-dimensional) time units: t = 114 600, t = 122 800, t = 133 800 and t = 205 800, respectively. These times indicate that the growth slows down the break-up dynamics compared to the previous case of (near) static break-up. More about this image found in Microstructural evolution in a thin film system with isotropic elasticity, ...

FIG. 8.7 Microstructural evolution in a thin film system with isotropic elasticity and two films in the simulation cell; the far-field composition is 0.01. From the top left, the microstructures correspond to (non-dimensional) time units: t = 78 800, t = 84 800, t = 100 800 and t = 251 000, respectively. Note that relatively, the break-up is faster for two films as compared to the case of a single film in the simulation cell. More about this image found in Microstructural evolution in a thin film system with isotropic elasticity a...

FIG. 8.8 Microstructural evolution in a thin film system with isotropic elasticity and two films in the simulation cell, the far-field composition is 0.05 leading to growth along with film break-up. From top left, the microstructures correspond to (non-dimensional) time units: t = 110 800, t = 122 800, t = 143 400, and t = 270 800, respectively. These times indicate that the growth slows down the break-up dynamics compared to the previous case of (near) static break-up. More about this image found in Microstructural evolution in a thin film system with isotropic elasticity a...

FIG. 8.9 Microstructural evolution in a thin film system with A Z = 1 3 . From top left, the microstructures correspond to (non-dimensional) time units: t = 9600, t = 11 400, t = 23 600 and t = 489 400, respectively. More about this image found in Microstructural evolution in a thin film system with A Z = 1 3 ...

FIG. 8.10 Microstructural evolution in a thin film system with A_Z = 1. From top left, in the clockwise direction, the microstructures correspond to (non-dimensional) time units: t = 2600, t = 3000, t = 4000, and t = 11 700, respectively. More about this image found in Microstructural evolution in a thin film system with A_Z...

FIG. 8.11 Microstructural evolution in a thin film system with A Z = 1 3 in 3D. From top left, in the clockwise direction, the microstructures correspond to (non-dimensional) time units: t = 100, t = 500, t = 1000, and t = 11 700 for the left and right columns, respectively. More about this image found in Microstructural evolution in a thin film system with A Z = 1 3 ...

FIG. 3.1 Several processes governing the thin-film growth are depicted schematically. More about this image found in Several processes governing the thin-film growth are depicted schematically...

FIG. 6.1 Schematic of an epitaxially grown thin film on a substrate. More about this image found in Schematic of an epitaxially grown thin film on a substrate.

FIG. 8.1 Photographs of buckling of thick (symmetric) and thin (anti-symmetric) notebooks under compressive stresses. More about this image found in Photographs of buckling of thick (symmetric) and thin (anti-symmetric) note...

FIG. 8.5 Microstructural evolution in a thin film system with isotropic elasticity and two films in the simulation cell; the far-field composition is 0.01. From top left, the microstructures correspond to (non-dimensional) time units: t = 105 200, t = 109 600, t = 112 200, and t = 142 200, respectively. More about this image found in Microstructural evolution in a thin film system with isotropic elasticity a...

FIG. 3.7 ALD-based thin layer growth process. Reprinted with permission Kim et al., Thin Solid Films 517 , 2563–2580 (2009). Copyright 2009 Elsevier. More about this image found in ALD-based thin layer growth process. Reprinted with permission Kim

FIG. 3.13 (a) Substrate and film with lattice parameters a s and a 0 , respectively, where a s < a 0 . (b) Pseudomorphic growth with compressive strain. (c) Misfit dislocation of thin-film growth beyond critical thickness. More about this image found in (a) Substrate and film with lattice parameters a s and a 0...

FIG. 3.18 Schematic of typical Ga-faced HEMT device structure. A nucleation layer is grown on the substrate for accommodating lattice mismatch. 2DEG is formed at the interface of the AlGaN/GaN interface on the GaN side. Thin GaN is formed at the top to make better contact. More about this image found in Schematic of typical Ga-faced HEMT device structure. A nucleation layer is ...