FIG. 5.15 Cylindrical surface expand view. More about this image found in Cylindrical surface expand view.

FIG. 3.3 (a) Bulk periodic (tri-periodic) structure with 2D surface lattice (a₁ × a₂) that carries the same symmetry as bulk and (b) surface periodic (diperiodic) structure that has undergone transformation and results new 2D surface superstructure (b₁ × b₂) that carries the same symmetry as bulk. More about this image found in (a) Bulk periodic (tri-periodic) structure with 2D surface lattice (

FIG. 8.3 Schematic of perturbation at the free surface (denoted by γ). The regions where interface displacements are prescribed is denoted by Γ. More about this image found in Schematic of perturbation at the free surface (denoted by γ...

FIG. 6.26 Effect of floating metal of surface roughness on capacitance ( Bansal et al., 2015 ). More about this image found in Effect of floating metal of surface roughness on capacitance ( Bansal

FIG. 8.5 Schematic representation of band bending at the surface of a n-type MO_x under (a) vacuum and (b) air. More about this image found in Schematic representation of band bending at the surface of a n-type MO...

FIG. 3.5 Long-wavelength dilation (periodic contraction and relaxation) generated on the surface of an epitaxially grown layer on a foreign substrate. More about this image found in Long-wavelength dilation (periodic contraction and relaxation) generated on...

FIG. 3.9 Color-filled IGM maps for different complexes. The isovalue of IGM is 0.01, and the surface sign (λ₂)ρ value is represented according to the color-filled column at the bottom ranging from −0.05 to 0.05 au. Reprinted with permission from Gui et al., ACS Sustain. Chem. Eng. 9 (17), 6033–6047 (2021). Copyright 2021 American Chemical Society. More about this image found in Color-filled IGM maps for different complexes. The isovalue of IGM is 0.01,...

FIG. 3.9 Color-filled IGM maps for different complexes. The isovalue of IGM is 0.01, and the surface sign (λ₂)ρ value is represented according to the color-filled column at the bottom ranging from −0.05 to 0.05 au. Reprinted with permission from Gui et al., ACS Sustain. Chem. Eng. 9 (17), 6033–6047 (2021). Copyright 2021 American Chemical Society. More about this image found in Color-filled IGM maps for different complexes. The isovalue of IGM is 0.01,...

FIG. 8.2 Schematic of ATG instability: the undulations of the film lead to relaxation of elastic energy on the peaks; in the process, the troughs are more strained as compared to a flat surface. Thus, once established, the perturbations tend to grow. Addition of material, given the chemical potent... More about this image found in Schematic of ATG instability: the undulations of the film lead to relaxatio...

FIG. 8.1 (a) Different operating modes of MC. Two principles: (i) microbalance-modification of resonance frequency (dynamic mode) and (ii) surface stress sensor-modification of deflection (static mode). Reprinted with permission from Dufour and Fadel, Sens. Actuators B Chem. 91 (1–3), 353–361 (2003). Copyright 2003 Elsevier. (b) Illustration of (i) bulk and (ii) surface micromachining processing steps forming suspended MCs. In bulk micromachining, the MC structure is directly etched into the wafer, which acts as the sacrificial layer, while in the surface micromachining, the wafer acts as the support and the sacrificial layer, typically SiO₂, is fabricated directly on the wafer. Reprinted with permission from Waggoner and Craighead, Lab Chip 7 (10), 1238 ( 2007 ). Copyright 2007 Royal Society of Chemistry. More about this image found in (a) Different operating modes of MC. Two principles: (i) microbalance-modif...

FIG. 1.17 Device schematic and surface electric field (E_surf) along the vertical cutline (E_y) at the center of the anode contact for β-Ga₂O₃ (a) Regular Schottky diode and (b) Trench Schottky barrier diode ( Li et al., 2021 ). (c) Reverse bias characteristics for a trench SBD with trench depth, d_tr = 1.55 µm and conventional SBD showing lower leakage current density and higher breakdown voltage achieved by trench SBD ( Li et al., 2021 ). More about this image found in Device schematic and surface electric field (E_surf...

FIG. 2.8 Schematic drawing of the process to cut substrates with a surface orientation different from that of the principal face of the bulk crystal. More about this image found in Schematic drawing of the process to cut substrates with a surface orientati...

FIG. 4.4 Surface morphologies measured by AFM on various orientations grown by conventional PAMBE and MOCATAXY (indium catalyzed growth). Reproduced with permission from Mauze et al., APL Mater. 8 (2), 021104 (2020b). Copyright 2020b AIP Publishing LLC. More about this image found in Surface morphologies measured by AFM on various orientations grown by conve...

FIG. 5.14 Phase diagram of surface reconstructions on the Ga₂O₃(010) surface as a function of Ga and Al chemical potentials. Adapted with permission from Wang et al., ACS Appl. Mater. Interfaces 13 (8), 10650–10655 (2021). Copyright 2021 ACS. More about this image found in Phase diagram of surface reconstructions on the Ga₂O₃...

FIG. 8.17 Longitudinal component of the surface electric field in an FMR-terminated SBD under reverse bias. More about this image found in Longitudinal component of the surface electric field in an FMR-terminated S...

FIG. 8.19 Calculated practical maximum surface electric fields (E_surf) in β-Ga₂O₃ SBDs, defined at a maximum reverse leakage current (J_R,max) of 1 or 100 mA/cm² at 25 °C. Experimental data from the literature are also shown (solid for J_R,max = 1 mA/cm² and hollow for J_R,max = 100 mA/cm²). Adapted with permission from Li et al., Appl. Phys. Lett. 116 (19), 192101 (2020d). Copyright 2020 AIP Publishing LLC. More about this image found in Calculated practical maximum surface electric fields (E...

FIG. 9.3 (a) SEM image of the KOH-etched β-Ga₂O₃ surface with Miller plane indices. Reprinted with permission from Jang et al., J. Alloys Compd. 731 , 118–125 (2018). Copyright 2018 Elsevier. (b) SEM image of Ga₂O₃ surface after PEC etching. Note that the white material on top is the gallium salt. Reprinted with permission from Alhalaili et al., Ceram. Int. 47 (1), 479–486 (2021). Copyright 2021 Elsevier. More about this image found in (a) SEM image of the KOH-etched β-Ga₂O₃ surface with ...

FIG. 9.9 XPS characterization of surface with planar (unetched) and MacEtch-formed structures. (a) XPS survey scan. (b) O/Ga ratio of different β-Ga₂O₃ structures extracted through the O 1s and Ga 3d peak intensity. Reprinted with permission from Huang et al., ACS Nano 13 (8), 8784–8792 ( 2019a ). Copyright 2019 American Chemical Society. More about this image found in XPS characterization of surface with planar (unetched) and MacEtch-formed s...