FIG. 3.13 (a) Substrate and film with lattice parameters a s and a 0 , respectively, where a s < a 0 . (b) Pseudomorphic growth with compressive strain. (c) Misfit dislocation of thin-film growth beyond critical thickness. More about this image found in (a) Substrate and film with lattice parameters a s and a 0...

FIG. 6.1 Schematic of an epitaxially grown thin film on a substrate. More about this image found in Schematic of an epitaxially grown thin film on a substrate.

FIG. 3.4 Sketch of the two-layered microcantilever made of an elastic substrate and coated ultrathin film performing (a) flexural and (b) torsional oscillations. Reprinted with permission from Zhao and Sun, Sensors 18 (2), 451 (2018). Copyright 2018 MDPI. More about this image found in Sketch of the two-layered microcantilever made of an elastic substrate and ...

FIG. 3.5 Sketch of the two-layered microcantilever made of an elastic substrate and coated ultrathin film performing (a) flexural and (b) torsional oscillations. Reprinted with permission from Stachiv and Gan, Coatings 9 (8), 486 (2019). Copyright 2019 MDPI. More about this image found in Sketch of the two-layered microcantilever made of an elastic substrate and ...

FIG. 4.4 Cross section of a CMOS device fabricated on a p-type silicon substrate. More about this image found in Cross section of a CMOS device fabricated on a p-type silicon substrate.

FIG. 1.9 (a) Predicted melt-grown β-Ga₂O₃ substrate production cost compared to SiC ( Reese et al., 2019 ), and β-Ga₂O₃ substrate growth by (b) EFG ( Kuramata et al., 2016 ) and (c) CZ ( Ahmadi and Oshima, 2019 ). More about this image found in (a) Predicted melt-grown β-Ga₂O₃ substrate production...

FIG. 2.4 (a) SYNOPICS 50 mm, Fe-doped, (010) β-Ga₂O₃ substrate, (b) rocking curve, and (c) AFM image. More about this image found in (a) SYNOPICS 50 mm, Fe-doped, (010) β-Ga₂O₃ substrate...

FIG. 2.5 SYNOPICS 50 mm, Fe-doped, (010) β-Ga₂O₃ substrate flatness (warp), and TTV maps. More about this image found in SYNOPICS 50 mm, Fe-doped, (010) β-Ga₂O₃ substrate fla...

FIG. 3.3 SIMS depth profiles showing Si accumulation at the film/substrate interface for MOCVD grown films. After BHF etch, the Si peak at the interface decreases by up to one order of magnitude. More about this image found in SIMS depth profiles showing Si accumulation at the film/substrate interface...

FIG. 6.4 UID β-Ga₂O₃ substrate (a) C–V extracted net doping concentration and Hall carrier concentration and (b) SIMS of Si and Sn. The Si level is comparable to the net doping, whereas Sn was below the detection limit of SIMS. Reproduced with permission from Zhang et al., Appl. Phys. Lett. 108 , 052105 ( 2016 ). Copyright 2016 AIP Publishing LLC. More about this image found in UID β-Ga₂O₃ substrate (a) C–...

FIG. 6.11 (a) β-Ga₂O₃ lateral transistor on Fe-doped substrate where a UID buffer layer is used for separation of the channel from the substrate and (b) effect of Fe-doping on the pinch-off voltage of the transistors showing a larger positive shift is observed with thinner buffer layers due to compensation effects of channel charge from the Fe-doped substrate ( Joishi et al., 2018 ). More about this image found in (a) β-Ga₂O₃ lateral transistor on Fe-doped substrate ...

FIG. 2.8 Schematic drawing of the process to cut substrates with a surface orientation different from that of the principal face of the bulk crystal. More about this image found in Schematic drawing of the process to cut substrates with a surface orientati...

FIG. 2.13 50-mm, Sn-doped, (001) oriented β-Ga₂O₃ substrates ( Ohba et al., 2021 ). More about this image found in 50-mm, Sn-doped, (001) oriented β-Ga₂O₃ substrates ( ...

FIG. 3.5 Long-wavelength dilation (periodic contraction and relaxation) generated on the surface of an epitaxially grown layer on a foreign substrate. More about this image found in Long-wavelength dilation (periodic contraction and relaxation) generated on...

FIG. 4.13 (a) Resistance–strain plot for VO₂ nanobeam on polystyrene substrate and (b) gauge factor change of VO₂ as a function of r tensile and compressive strain ( Hu et al., 2010 ). More about this image found in (a) Resistance–strain plot for VO₂ nanobeam on polystyrene subst...

FIG. 7.8 RSM image of LSMO layer of ∼20 nm and BFO layer of ∼20 nm in which both are expected to be relaxed from that of the substrate lattice constant and possess the strain relaxed lattice constant. More about this image found in RSM image of LSMO layer of ∼20 nm and BFO layer of ∼20 nm in which both are...

FIG. 3.18 Schematic of typical Ga-faced HEMT device structure. A nucleation layer is grown on the substrate for accommodating lattice mismatch. 2DEG is formed at the interface of the AlGaN/GaN interface on the GaN side. Thin GaN is formed at the top to make better contact. More about this image found in Schematic of typical Ga-faced HEMT device structure. A nucleation layer is ...

FIG. 7.7 (a) RSM studies of tetragonal BFO of 20 nm grown on LSMO∼2 nm on LAO(001) substrates recorded in assymetric mode at 10 3 ¯ reflection and (b) RSM studies of LSMO ∼10 nm showing the smearing out of peak away from the planar lattice constant of LAO, indicating the beginning of strai... More about this image found in (a) RSM studies of tetragonal BFO of 20 nm grown on LSMO∼2 nm on LAO(001) s...

FIG. 4.6 (a) XRD of thickness-dependent VO₂ epitaxial film on rutile TiO₂ substrate; (b) schematic shows the growth of rutile VO₂ phase on rutile TiO₂; (c) resistance–temperature plot; and (d) corresponding differential resistance plot showing occurrences of resistance drop at different temperatures for varied VO₂ film thickness ( Fan et al., 2014 ). More about this image found in (a) XRD of thickness-dependent VO₂ epitaxial film on rutile TiO...