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1-20 of 446 Search Results for
substrate
Book Chapter
Series: AIPP Books, Principles
Published: March 2023
10.1063/9780735425590_007
EISBN: 978-0-7354-2559-0
ISBN: 978-0-7354-2556-9
...Ramadurai, R., “Substrate strain induced effects on multiferroic epilayers,” in Strain Engineering in Functional Materials and Devices, edited by R. Ramadurai and S. Bhattacharyya (AIP Publishing, Melville, New York, 2023), pp. 7-1–7-24. Introduction The magnetoelectric (ME) effect...
Images
in Impact of Strain on the Electronic and Optoelectronic Properties of III-Nitride Semiconductor Heterostructures
> Strain Engineering in Functional Materials and Devices
Published: March 2023
FIG. 3.13 (a) Substrate and film with lattice parameters a s and a 0 , respectively, where a s < a 0 . (b) Pseudomorphic growth with compressive strain. (c) Misfit dislocation of thin-film growth beyond critical thickness. More about this image found in (a) Substrate and film with lattice parameters a s and a 0...
Images
in Phase-Field Modeling of Ferroic Domains in Strained Structures
> Strain Engineering in Functional Materials and Devices
Published: March 2023
FIG. 6.1 Schematic of an epitaxially grown thin film on a substrate. More about this image found in Schematic of an epitaxially grown thin film on a substrate.
Images
in Recent Progress in Cantilever-Based Sensors: An Overview of Application and Fabrication Techniques
> MEMS Applications in Electronics and Engineering
Published: March 2023
FIG. 3.4 Sketch of the two-layered microcantilever made of an elastic substrate and coated ultrathin film performing (a) flexural and (b) torsional oscillations. Reprinted with permission from Zhao and Sun, Sensors 18 (2), 451 (2018). Copyright 2018 MDPI. More about this image found in Sketch of the two-layered microcantilever made of an elastic substrate and ...
Images
in Recent Progress in Cantilever-Based Sensors: An Overview of Application and Fabrication Techniques
> MEMS Applications in Electronics and Engineering
Published: March 2023
FIG. 3.5 Sketch of the two-layered microcantilever made of an elastic substrate and coated ultrathin film performing (a) flexural and (b) torsional oscillations. Reprinted with permission from Stachiv and Gan, Coatings 9 (8), 486 (2019). Copyright 2019 MDPI. More about this image found in Sketch of the two-layered microcantilever made of an elastic substrate and ...
Images
Published: March 2023
FIG. 4.4 Cross section of a CMOS device fabricated on a p-type silicon substrate. More about this image found in Cross section of a CMOS device fabricated on a p-type silicon substrate.
Images
Published: February 2023
FIG. 1.9 (a) Predicted melt-grown β-Ga2O3 substrate production cost compared to SiC ( Reese et al., 2019 ), and β-Ga2O3 substrate growth by (b) EFG ( Kuramata et al., 2016 ) and (c) CZ ( Ahmadi and Oshima, 2019 ). More about this image found in (a) Predicted melt-grown β-Ga2O3 substrate production...
Images
Published: February 2023
FIG. 2.4 (a) SYNOPICS 50 mm, Fe-doped, (010) β-Ga2O3 substrate, (b) rocking curve, and (c) AFM image. More about this image found in (a) SYNOPICS 50 mm, Fe-doped, (010) β-Ga2O3 substrate...
Images
Published: February 2023
FIG. 2.5 SYNOPICS 50 mm, Fe-doped, (010) β-Ga2O3 substrate flatness (warp), and TTV maps. More about this image found in SYNOPICS 50 mm, Fe-doped, (010) β-Ga2O3 substrate fla...
Images
Published: February 2023
FIG. 3.3 SIMS depth profiles showing Si accumulation at the film/substrate interface for MOCVD grown films. After BHF etch, the Si peak at the interface decreases by up to one order of magnitude. More about this image found in SIMS depth profiles showing Si accumulation at the film/substrate interface...
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in Dopants in β-Ga2O3: From Theory to Experiments
> Ultrawide Bandgap β-Ga2O3 SemiconductorTheory and Applications
Published: February 2023
FIG. 6.4 UID β-Ga2O3 substrate (a) C–V extracted net doping concentration and Hall carrier concentration and (b) SIMS of Si and Sn. The Si level is comparable to the net doping, whereas Sn was below the detection limit of SIMS. Reproduced with permission from Zhang et al., Appl. Phys. Lett. 108 , 052105 ( 2016 ). Copyright 2016 AIP Publishing LLC. More about this image found in UID β-Ga2O3 substrate (a) C–...
Images
in Dopants in β-Ga2O3: From Theory to Experiments
> Ultrawide Bandgap β-Ga2O3 SemiconductorTheory and Applications
Published: February 2023
FIG. 6.11 (a) β-Ga2O3 lateral transistor on Fe-doped substrate where a UID buffer layer is used for separation of the channel from the substrate and (b) effect of Fe-doping on the pinch-off voltage of the transistors showing a larger positive shift is observed with thinner buffer layers due to compensation effects of channel charge from the Fe-doped substrate ( Joishi et al., 2018 ). More about this image found in (a) β-Ga2O3 lateral transistor on Fe-doped substrate ...
Images
Published: February 2023
FIG. 2.8 Schematic drawing of the process to cut substrates with a surface orientation different from that of the principal face of the bulk crystal. More about this image found in Schematic drawing of the process to cut substrates with a surface orientati...
Images
Published: February 2023
FIG. 2.13 50-mm, Sn-doped, (001) oriented β-Ga2O3 substrates ( Ohba et al., 2021 ). More about this image found in 50-mm, Sn-doped, (001) oriented β-Ga2O3 substrates ( ...
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in Impact of Strain on the Electronic and Optoelectronic Properties of III-Nitride Semiconductor Heterostructures
> Strain Engineering in Functional Materials and Devices
Published: March 2023
FIG. 3.5 Long-wavelength dilation (periodic contraction and relaxation) generated on the surface of an epitaxially grown layer on a foreign substrate. More about this image found in Long-wavelength dilation (periodic contraction and relaxation) generated on...
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in Strain Engineering of Metal Insulator Transition in VO2
> Strain Engineering in Functional Materials and Devices
Published: March 2023
FIG. 4.13 (a) Resistance–strain plot for VO2 nanobeam on polystyrene substrate and (b) gauge factor change of VO2 as a function of r tensile and compressive strain ( Hu et al., 2010 ). More about this image found in (a) Resistance–strain plot for VO2 nanobeam on polystyrene subst...
Images
in Substrate Strain Induced Effects on Multiferroic Epilayers
> Strain Engineering in Functional Materials and Devices
Published: March 2023
FIG. 7.8 RSM image of LSMO layer of ∼20 nm and BFO layer of ∼20 nm in which both are expected to be relaxed from that of the substrate lattice constant and possess the strain relaxed lattice constant. More about this image found in RSM image of LSMO layer of ∼20 nm and BFO layer of ∼20 nm in which both are...
Images
in Impact of Strain on the Electronic and Optoelectronic Properties of III-Nitride Semiconductor Heterostructures
> Strain Engineering in Functional Materials and Devices
Published: March 2023
FIG. 3.18 Schematic of typical Ga-faced HEMT device structure. A nucleation layer is grown on the substrate for accommodating lattice mismatch. 2DEG is formed at the interface of the AlGaN/GaN interface on the GaN side. Thin GaN is formed at the top to make better contact. More about this image found in Schematic of typical Ga-faced HEMT device structure. A nucleation layer is ...
Images
in Substrate Strain Induced Effects on Multiferroic Epilayers
> Strain Engineering in Functional Materials and Devices
Published: March 2023
FIG. 7.7 (a) RSM studies of tetragonal BFO of 20 nm grown on LSMO∼2 nm on LAO(001) substrates recorded in assymetric mode at 10 3 ¯ reflection and (b) RSM studies of LSMO ∼10 nm showing the smearing out of peak away from the planar lattice constant of LAO, indicating the beginning of strai... More about this image found in (a) RSM studies of tetragonal BFO of 20 nm grown on LSMO∼2 nm on LAO(001) s...
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in Strain Engineering of Metal Insulator Transition in VO2
> Strain Engineering in Functional Materials and Devices
Published: March 2023
FIG. 4.6 (a) XRD of thickness-dependent VO2 epitaxial film on rutile TiO2 substrate; (b) schematic shows the growth of rutile VO2 phase on rutile TiO2; (c) resistance–temperature plot; and (d) corresponding differential resistance plot showing occurrences of resistance drop at different temperatures for varied VO2 film thickness ( Fan et al., 2014 ). More about this image found in (a) XRD of thickness-dependent VO2 epitaxial film on rutile TiO...
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