Search Results for semiconductor hole

... the dimension of energy. ħ is the reduced Planck constant and m∗ is the effective mass of electron/hole. k₀ is the Boltzmann constant. Impact of strain in group IV semiconductors Group IV semiconductors, viz., Si, Ge, and Si_(1−x)Ge_x have become...

... in GaN films ,” Appl. Phys. Lett.   78 , 1976 – 1978 ( 2001 ). 10.1063/1.1359780 Briggs , P. J. , Walker , A. B. , and Herbert , D. C. , “ Calculation of hole mobilities in relaxed and strained SiGe by Monte Carlo simulation ,” Semicond. Sci. Technol.   13 , 680 – 691 ( 1998...

... into account. This leads to a poor description of the excited states even in moderately correlated systems like simple semiconductors, let alone strongly correlated systems such as transition metal oxides in which a metallic state is predicted for an insulating system. Few remedies have been proposed...

.... , Kawasaki , M. , Keimer , B. , Nagaosa , N. , and Tokura , Y. , “ Emergent phenomena at oxide interfaces ,” Nat. Mater   11 , 103 – 113 ( 2012 ). 10.1038/nmat3223 Ingle , N. J. C. and Elfimov , I. S. , “ Influence of epitaxial strain on the ferromagnetic semiconductor EuO...

... as the electron-hole pair. Generally, the energy required to free an electron from the valence band of a silicon atom (i.e., band gap) is about 1.12 eV. The electric field swept the free electron across the depletion p region and electrons accumulated in the n region creating a negative charge...

... to photons of suitable energy may carry an electrical current In a semiconductor, the number of charges that move freely within the material can be modified HLP: 25 OA OMC 10 MC ( Scotti di Uccio et al., 2020 ) level: High School Atoms and Electrons Measurement and  Atoms...

...Huang, H.-C. and Li, X., “Etching of β-Ga₂O₂,” in Ultrawide Bandgap β-Ga₂O₃ Semiconductor: Theory and Applications, edited by J. S. Speck and E. Farzana (AIP Publishing, Melville, New York, 2023), pp. 9-1–9-18...

... in vertical devices. Moreover, experimental evidence of self-trapped holes will be provided from photoluminescence (PL) and cathodoluminescence (CL) measurements that are found to be consistent with the theoretical findings. Introduction A hallmark of conventional semiconductors is the ability...

...Ultra-wide bandgap (UWBG) semiconductors are being intensely researched and are emerging as a promising candidate for high-power devices and high-speed electronics, power amplifiers, electric vehicles, and deep ultraviolet solar-blind detectors ( Higashiwaki et al., 2012 ; and Pearton...

... resistive GaN doped with C and Si ,” Phys. Status Solidi C   2 ( 7 ), 2411 – 2414 ( 2005a ). 10.1002/pssc.200461594 Armstrong , A. , Arehart , A. R. , and Ringel , S. A. , “ A method to determine deep level profiles in highly compensated, wide band gap semiconductors ,” J. Appl. Phys...

...Power semiconductors have created a widespread interest to address the global energy crisis with low-loss devices towards realization of a green economy. The growing demand of high-power electronics for application in the automobile industry, communication, and high-voltage grids have already...

...Kumar, A., Ghosh, K., and Singisetti, U., “Electron transport in β-Ga₂O₃ from first-principles,” in Ultrawide Bandgap β-Ga₂O₃ Semiconductor: Theory and Applications, edited by J. S. Speck and E. Farzana (AIP Publishing...

... deposition-grown (010) β-Ga₂O₃ ,” Phys. Status Solidi RRL   14 ( 8 ), 2000145 ( 2020 ). 10.1002/pssr.202000145 Frodason , Y. K. , Johansen , K. M. , Vines , L. , and Varley , J. B. , “ Self-trapped hole and impurity-related broad luminescence in β...

.../68.903217 Adachi , S. , Properties of Group-IV, III–V and II–VI Semiconductors ( John Wiley & Sons, Ltd , 2005 ). 10.1002/0470090340.ch8 Adar , R. , Shani , Y. , Henry , C. H. , Kistler , R. C. , Blonder , G. E. , and Olsson , N. A. , “ Measurement of very...

... sensor (i) 450 µm long device with PDMS polymer and (ii) magnified image of the suspended top electrode of the device with etch holes (i) Reproduced with permission from Likhite et al., Sens. Actuators B Chem. 311 , 127817 (2020). Copyright 2020 Elsevier. (c) SEM images of AlGaN/GaN...

... component will be a Mach–Zehnder interferometer or a directional coupler. Non-resonant coupler (i.e., evanescent field coupler) and three popular semiconductor resonant cavities ( Yamamoto and Slusher, 1993 ), i.e., gratings ( Veerasubramanian et al., 2012 ), photonic crystal defects ( Ellis et...