FIG. 8.4 Schematic of an SBD with a single-step field plate with length L_FP and height h_FP connected to the Schottky electrode. The × and ∗ symbols indicate the positions of peak off-state electric fields, whose intensities are determined by both L_FP and h_FP. More about this image found in Schematic of an SBD with a single-step field plate with length L...

FIG. 8.5 Schematic of an SBD with a beveled or slanted field plate. More about this image found in Schematic of an SBD with a beveled or slanted field plate.

FIG. 8.6 (a) Schematic of the first field-plated β-Ga₂O₃ SBD. (b) Forward current–voltage (I–V) characteristics of the device. (c) Reverse breakdown characteristics of the device. Reprinted with permission from Konishi et al., Appl. Phys. Lett. 110 (10), 103506 (2017). Copyright 2017 AIP Publishing LLC. More about this image found in (a) Schematic of the first field-plated β-Ga₂O₃ SBD. ...

FIG. 8.7 (a) Schematic of a β-Ga₂O₃ SBD with an ultrahigh-permittivity field-plate dielectric, where S1 corresponds to a 15-period BaTiO₃/SrTiO₃ superlattice as the field-plate oxide [(BTO/STO)₁₅ FP] and S2 corresponds to BaTiO₃ as the field-plate oxide (BTO FP). The cross-sectional transmission electron microscopy (TEM) image depicts the field-plated region of the S1 structure. (b) Forward I–V characteristics and differential R_ON,sp of a β-Ga₂O₃ SBD with (BTO/STO)₁₅ FP, a β-Ga₂O₃ SBD with BTO FP, and a reference SBD without a field plate. (c) Reverse breakdown characteristics of the three different SBD structures. Reprinted with permission from Roy et al., IEEE Electron Device Lett. 42 (8), 1140–1143 (2021). Copyright 2021 IEEE. More about this image found in (a) Schematic of a β-Ga₂O₃ SBD with an ultrahigh-perm...

FIG. 8.8 Schematic of a beveled-mesa SBD. More about this image found in Schematic of a beveled-mesa SBD.

FIG. 8.10 Schematics of an unterminated β-Ga₂O₃ SBD, a β-Ga₂O₃ SBD with self-aligned fluorine plasma treatment (FPT), and a β-Ga₂O₃ SBD with self-aligned beveled fluorine plasma treatment (BFPT). (b) Forward I–V characteristics and differential R_ON,sp of the three different SBDs. (c) Reverse breakdown characteristics of the three different SBDs. Reprinted with permission from Hu et al., IEEE Electron Device Lett. 41 (3), 441–444 (2020a). Copyright 2020 IEEE. More about this image found in Schematics of an unterminated β-Ga₂O₃ SBD, a β-Ga

FIG. 8.11 (a) Schematic of an SBD with resistive edge termination via ion implantation. (b) Cross-sectional TEM image of a β-Ga₂O₃ SBD with Ar-implanted edge termination showing lattice damage due to ion implantation ( Gao et al., 2019 ). More about this image found in (a) Schematic of an SBD with resistive edge termination via ion implantatio...

FIG. 8.13 (a) Schematic of a β-Ga₂O₃ SBD with a trench-filled SiO₂ dielectric for edge termination. (b) Forward I–V characteristics and differential R_ON,sp of several representative devices. (c) Reverse breakdown characteristics of several representative devices. Reprinted with permission from Dong et al., IEEE Electron Device Lett. 43 (5), 765–768 (2022). Copyright 2022 IEEE. More about this image found in (a) Schematic of a β-Ga₂O₃ SBD with a trench-filled S...

FIG. 8.14 Conception of the guard-ring termination technique for an SBD. Reproduced with permission from Lepselter and Sze, Bell Syst. Techn. J. 47 (2), 195–208 (1968). Copyright 1968 John Wiley & Sons Inc. More about this image found in Conception of the guard-ring termination technique for an SBD. Reproduce...

FIG. 8.15 Schematics of SBD structures terminated with (a) FFRs and (b) FMRs. More about this image found in Schematics of SBD structures terminated with (a) FFRs and (b) FMRs.

FIG. 8.18 Schematic of a β-Ga₂O₃ SBD terminated with p-NiO FLRs alongside an unterminated device. Reprinted with permission from Gong et al., Appl. Phys. Lett. 118 (20), 202102 (2021). Copyright 2021 AIP publishing LLC. More about this image found in Schematic of a β-Ga₂O₃ SBD terminated with p...

FIG. 8.23 (a) Schematic illustration of the RESURF effect in a trench SBD. Key geometric parameters controlling the RESURF effect are the trench depth (d_tr), fin width (W_fin), and trench width (W_tr). (b) Effect of d_tr in shaping the equipotential contours in the fin regions of a trench SBD, where the equipotential contours are stretched away from the Schottky interface with increasing d_tr. Two distinct advantages of this RESURF effect are a reduction in the electric field at the Schottky interface and a shift in the peak electric field from the surface into the bulk of the semiconductor. Reprinted with permission from Mehrotra and Baliga, IEEE International Electron Devices Meeting (IEDM), 5–8 December 1993 (IEEE, Washington, DC, USA, 1993), pp. 675–678. Copyright 1993 IEEE. More about this image found in (a) Schematic illustration of the RESURF effect in a trench SBD. Key geomet...

FIG. 8.25 (a) Schematic of a field-plated β-Ga₂O₃ trench SBD. (b) Cross-sectional scanning electron microscopy image of a fin channel. (c) Reverse breakdown characteristics of field-plated β-Ga₂O₃ trench SBDs. In comparison with regular β-Ga₂O₃ SBDs employing both mesa and field-plate terminations, the field-plated trench devices have a much lower leakage current and a much higher V_br. (d) Forward I–V characteristics and differential R_ON,sp of field-plated β-Ga₂O₃ trench SBDs under DC and pulsed conditions. A base voltage of 0 V, a pulse width of 1 µs, and a duty cycle of 0.1% are used for the pulsed measurements. Reprinted with permission from Li et al., IEEE Electron Device Lett. 41 (1), 107–110 (2020a). Copyright 2020 IEEE. More about this image found in (a) Schematic of a field-plated β-Ga₂O₃ trench SBD. (...

FIG. 8.28 (a) Schematic of a field-plated β-Ga₂O₃ SBD with a double-side-cooling flip-chip package. (b) I–V waveforms of the double-side-cooled device in surge current tests. (c) I–V loops of the double-side-cooled device. Reprinted with permission from Xiao et al., IEEE Trans. Power Electron. 36 (8), 8565–8569 (2021). Copyright 2021 IEEE. More about this image found in (a) Schematic of a field-plated β-Ga₂O₃ SBD with a do...

FIG. 8.9 (a) Schematics of beveled-mesa β-Ga₂O₃ SBDs with a ∼45° beveled field plate (BFP) and with a small-angle (∼1°) beveled field plate (SABFP). (b) Reverse breakdown characteristics of the BFP-SBD and SABFP-SBD showing higher V_br than those of mesa-free β-Ga₂O₃ SBDs that are either unterminated or terminated with a ∼45° beveled surface field plate (SFP; similar to Fig. 8.5 ). (c) Forward I–V characteristics and differential R_ON,sp of SABFP-SBDs with different anode diameters. Reprinted with permission from Allen et al., IEEE Electron Device Lett. 40 (9), 1399–1402 (2019). Copyright 2019 IEEE. More about this image found in (a) Schematics of beveled-mesa β-Ga₂O₃ SBDs with a ∼4...

FIG. 1.17 Device schematic and surface electric field (E_surf) along the vertical cutline (E_y) at the center of the anode contact for β-Ga₂O₃ (a) Regular Schottky diode and (b) Trench Schottky barrier diode ( Li et al., 2021 ). (c) Reverse bias characteristics for a trench SBD with trench depth, d_tr = 1.55 µm and conventional SBD showing lower leakage current density and higher breakdown voltage achieved by trench SBD ( Li et al., 2021 ). More about this image found in Device schematic and surface electric field (E_surf...

FIG. 8.17 Longitudinal component of the surface electric field in an FMR-terminated SBD under reverse bias. More about this image found in Longitudinal component of the surface electric field in an FMR-terminated S...

FIG. 8.22 (a) Schematic of the first β-Ga₂O₃ JBSD. (b) Forward I–V characteristic of the JBSD showing similar V_ON to a regular β-Ga₂O₃ SBD and lower V_ON than a p-NiO/n-Ga₂O₃ diode (PND). (c) Reverse breakdown characteristic of the JBSD showing higher V_br than a regular β-Ga₂O₃ SBD because of the RESURF effect but lower V_br than a PND owing to higher reverse leakage current through a Schottky junction. Reprinted with permission from Sasaki et al., Proc. SPIE 10919 , 1091913 (2019). Copyright 2019 SPIE. More about this image found in (a) Schematic of the first β-Ga₂O₃ JBSD. (b) Forward ...