...Ghadi, H. J., McGlone, J. F., Farzana, E., Arehart, A. R., and Ringel, S. A., “Radiation effects on β-Ga₂O₃ materials and devices,” in Ultrawide Bandgap β-Ga₂O₃ Semiconductor: Theory and Applications, edited by J. S...

... fed growth method ,” Jpn. J. Appl. Phys.   47 ( 11 ), 8506 – 8509 ( 2008 ). 10.1143/JJAP.47.8506 Armstrong , A. , Arehart , A. , Green , D. , Speck , J. S. , Mishra , U. K. , and Ringel , S. A. , “ A novel method to investigate defect states in MBE grown highly...

... , Z. , McGlone , J. F. , Daughton , D. R. , Arehart , A. R. , Ringel , S. A. , Rajan , S. , and Zhao , H. , “ Probing charge transport and background doping in metal-organic chemical vapor deposition-grown (010) β-Ga₂O₃ ,” Phys. Status Solidi RRL   14...

... , J. B. , Blue , T. E. , Speck , J. S. , Arehart , A. R. , and Ringel , S. A. , “ Influence of neutron irradiation on deep levels in Ge-doped (010) β-Ga₂O₃ layers grown by plasma-assisted molecular beam epitaxy ,” APL Mater.   7 ( 12 ), 121102 ( 2019...

...Acknowledgments We acknowledge fruitful collaborations and discussions with Y. Frodason, Z. Galazka, H.-L. Huang, M. E. Ingebrigtsen, K. Irmscher, A. Janotti, J. M. Johnson, V. Lordi, K. Lynn, J. L. Lyons, M. D. McCluskey, H. Peelaers, A. Perron, S. Rajan, S. A. Ringel, J. S. Speck, F. Tuomisto, L...

....2020.3032387 Farzana , E. , Zhang , Z. , Paul , P. K. , Arehart , A. R. , and Ringel , S. A. , “ Influence of metal choice on (010) β-Ga₂O₃ Schottky diode properties ,” Appl. Phys. Lett.   110 ( 20 ), 202102 ( 2017 ). 10.1063/1.4983610 Feng , Z...

... on (110) substrate by plasma-assisted molecular beam epitaxy ,” Appl. Phys. Lett.   117 ( 15 ), 152105 ( 2020 ). 10.1063/5.0027884 Kalarickal , N. K. , Xia , Z. , McGlone , J. , Krishnamoorthy , S. , Moore , W. , Brenner , M. , Arehart , A. R. , Ringel , S...

.... in Electrical and Computer Engineering from The Ohio State University (OSU) in 2019 under Professor Steven A. Ringel and B.S. in Electrical Engineering from Bangladesh University of Engineering and Technology in 2011. Her Ph.D. research in advanced electronic characterization of β-Ga₂O₃...

... doping ,” J. Alloys Compd.   788 , 925 – 928 ( 2019 ). 10.1016/j.jallcom.2019.02.076 Farzana , E. , Mauze , A. , Varley , J. B. , Blue , T. E. , Speck , J. S. , Arehart , A. R. , and Ringel , S. A. , “ Influence of neutron irradiation on deep levels in Ge-doped (010...

... , A. R. , Ringel , S. A. , Rajan , S. , and Zhao , H. , “ Probing charge transport and background doping in metal-organic chemical vapor deposition-grown (010) β-Ga₂O₃ ,” Phys. Status Solidi RRL   14 ( 8 ), 2000145 ( 2020 ). 10.1002/pssr.202000145 Ghosh , K...

.... , and Ringel , S. A. , “ Deep level defects in Ge-doped (010) β-Ga₂O₃ layers grown by plasma-assisted molecular beam epitaxy ,” J. Appl. Phys.   123 ( 16 ), 161410 ( 2018 ). 10.1063/1.5010608 Feng , Z. , Anhar Uddin Bhuiyan , A. F. M. , Karim , M. R. , and Zhao...

... Lett.   41 ( 12 ), 1806 – 1809 ( 2020 ). 10.1109/LED.2020.3032387 Farzana , E. , Zhang , Z. , Paul , P. K. , Arehart , A. R. , and Ringel , S. A. , “ Influence of metal choice on (010) β-Ga₂O₃ Schottky diode properties ,” Appl. Phys. Lett.   110 ( 20...

... ), 162109 ( 2021 ). 10.1063/5.0047821 Farzana , E. , Zhang , Z. , Paul , P. K. , Arehart , A. R. , and Ringel , S. A. , “ Influence of metal choice on (010) β-Ga₂O₃ Schottky diode properties ,” Appl. Phys. Lett.   110 ( 20 ), 202102 ( 2017 ). 10.1063...

... , A. R. , Ringel , S. A. , Rajan , S. , and Zhao , H. , “ Probing charge transport and background doping in metal-organic chemical vapor deposition-grown (010) β-Ga₂O₃ ,” Phys. Status Solidi RRL   14 , 2000145 ( 2020b ). 10.1002/pssr.202000145 Galazka , Z...

...-Ga₂O₃ on (110) substrate by plasma-assisted molecular beam epitaxy ,” Appl. Phys. Lett.   117 ( 15 ), 152105 ( 2020 ). 10.1063/5.0027884 Kalarickal , N. K. , Xia , Z. , McGlone , J. , Krishnamoorthy , S. , Moore , W. , Brenner , M. , Arehart , A. R. , Ringel , S...

... ,” IEEE Trans. Electron Devices   67 ( 10 ), 3954 – 3959 ( 2020 ). 10.1109/TED.2020.3013242 Farzana , E. , Ahmadi , E. , Speck , J. S. , Arehart , A. R. , and Ringel , S. A. , “ Deep level defects in Ge-doped (010) β-Ga₂O₃ layers grown by plasma-assisted...

... , Z. , Paul , P. K. , Arehart , A. R. , and Ringel , S. A. , “ Influence of metal choice on (010) β-Ga₂O₃ Schottky diode properties ,” Appl. Phys. Lett.   110 ( 20 ), 202102 ( 2017 ). 10.1063/1.4983610 Fu , H. , Chen , H. , Huang , X...

.... Irmscher, A. Janotti, J. M. Johnson, V. Lordi, K. Lynn, J. L. Lyons, M. D. McCluskey, H. Peelaers, A. Perron, S. Rajan, S. A. Ringel, J. S. Speck, F. Tuomisto, L. Vines, G. Wagner, J. R. Weber, and H. P. Zhao. M.W., S.M., J.H., and C.G.V.d.W. were supported by the GAME MURI of the Air Force Office...

.... Lett.   117 , 222106 ( 2020a ). 10.1063/5.0031562 Feng , Z. , Bhuiyan , A. F. M. A. U. , Xia , Z. , Moore , W. , Chen , Z. , McGlone , J. F. , Daughton , D. R. , Arehart , A. R. , Ringel , S. A. , Rajan , S. , and Zhao , H. , “ Probing charge...