Search Results for reverse

FIG. 1.22 Experimentally obtained maximum operating temperature vs maximum reverse breakdown voltage of Schottky diodes showing β-Ga₂O₃ devices can reach high-temperature and high-breakdown operation with simpler designs compared to SiC and GaN ( Wang et al., 2019 ). More about this image found in Experimentally obtained maximum operating temperature vs maximum reverse br...

FIG. 8.2 Equipotential contours of a reverse-biased Schottky diode showing 2-D field crowding at the edge of the Schottky contact. More about this image found in Equipotential contours of a reverse-biased Schottky diode showing 2-D field...

FIG. 8.12 Comparison between reverse breakdown characteristics of β-Ga₂O₃ SBDs with no edge termination, He-implanted edge termination, and Mg-implanted edge termination. Reprinted with permission from Zhang et al., IEEE Trans. Electron Devices 67 (10), 3948 More about this image found in Comparison between reverse breakdown characteristics of β-Ga₂O...

FIG. 8.27 Temperature-dependent reverse leakage characteristics of a near-ideal β-Ga₂O₃ SBD. The reverse leakage current (J_R) is a sum of TE current (J_TE) that captures over-the-barrier current and TFE current (J_TFE More about this image found in Temperature-dependent reverse leakage characteristics of a near-ideal β-Ga...

FIG. 4.11 (a) Thermally driven switching of stress in a VO₂ actuator; (b) control of recoverable stress at different temperatures; and (c) reversible stress switching cycles from compressive to tensile ( Viswanath et al., 2011 ). More about this image found in (a) Thermally driven switching of stress in a VO₂ actuator; (b) ...

FIG. 1.2 Equivalent circuit of (a) the ideal one-diode PV cell model, (b) and (c) simplified one-diode models, (d) practical one-diode model, (e) double-diode model (DDM), (f) modified double-diode model (MDDM), (g) reverse double-diode model, and (h) three-diode model (TDM) ( Abbassi et al More about this image found in Equivalent circuit of (a) the ideal one-diode PV cell model, (b) and (c) si...

FIG. 8.17 Longitudinal component of the surface electric field in an FMR-terminated SBD under reverse bias. More about this image found in Longitudinal component of the surface electric field in an FMR-terminated S...

-Ga₂O₃ diode (PND). (c) Reverse breakdown characteristic of the JBSD showing higher V_br than a regular β-Ga₂O₃ SBD because of the RESURF effect but lower V_br than a PND owing to higher reverse leakage current through a Schottky junction More about this image found in (a) Schematic of the first β-Ga₂O₃ JBSD. (b) Forward ...

FIG. 8.20 Conception of the pinch rectifier or JBSD structure. The schematics illustrate (a) the current flow pattern in the forward conduction mode and (b) the depletion region in the reverse blocking mode. Reprinted with permission from Baliga, IEEE Electron Device Lett. 5 (6), 194–196 More about this image found in Conception of the pinch rectifier or JBSD structure. The schematics illustr...

FIG. 8.6 (a) Schematic of the first field-plated β-Ga₂O₃ SBD. (b) Forward current–voltage (I–V) characteristics of the device. (c) Reverse breakdown characteristics of the device. Reprinted with permission from Konishi et al., Appl. Phys. Lett More about this image found in (a) Schematic of the first field-plated β-Ga₂O₃ SBD. ...

FIG. 8.16 Conception of the FMR termination technique for a vertical diode structure, implemented here in a p–n junction diode: (a) cross-sectional structure and (b) qualitative potential distribution at reverse bias. Reprinted with permission from Yilmaz and Van Dell, IEEE More about this image found in Conception of the FMR termination technique for a vertical diode structure,...

FIG. 8.24 Simulated electric-field profiles in a β-Ga₂O₃ trench SBD along a vertical cutline at the center of a fin channel [see Fig. 8.23(a) ] under a reverse bias of −1375 V by varying (a) W_fin and (b) d More about this image found in Simulated electric-field profiles in a β-Ga₂O₃ trench...

FIG. 8.13 (a) Schematic of a β-Ga₂O₃ SBD with a trench-filled SiO₂ dielectric for edge termination. (b) Forward I–V characteristics and differential R_ON,sp of several representative devices. (c) Reverse breakdown More about this image found in (a) Schematic of a β-Ga₂O₃ SBD with a trench-filled S...