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FIG. 6.29 Trajectory of the torsional switch with respect to the applied voltage ( Bansal et al., 2014 ). More about this image found in Trajectory of the torsional switch with respect to the applied voltage ( Ba...

FIG. 1.1 Power electronics application with respect to voltage and current range ( Hoo Teo et al., 2021 ). More about this image found in Power electronics application with respect to voltage and current range ( H...

FIG. 1.6 (a) Ionized doping concentration in different semiconductors with respect to the background doping considering compensation effect of acceptor-like impurities ( Zhang and Speck, 2020 ). (b) Modified BFOM contour plot estimated from the on-resistance and breakdown field accounting ionized More about this image found in (a) Ionized doping concentration in different semiconductors with respect t...

FIG. 14.3 Axis representing how research has conceptualized learning goals in physics with respect to affect from least radical (most traditional) to most radical. More about this image found in Axis representing how research has conceptualized learning goals in physics...

FIG. 10.9 Prediction of inter-cyclic and intra-cyclic battery dynamics using OASIS as a two-timescale modeling approach (k = 1, …, m and s = 1, …, n denote operating cycle number and sampling time, respectively). More about this image found in Prediction of inter-cyclic and intra-cyclic battery dynamics using OASIS as...

FIG. 8.19 Closed-loop state trajectories under P control with K = −3 with a depolarizing error parameter of 0.05 in the simulations labeled “1 Shot, Noise” and “10 Shots, Noise.” These two simulations use 1 shot and 10 shots, respectively. More about this image found in Closed-loop state trajectories under P control with K = −3...

FIG. 1.9 Variation of the Raman shift of B_3g(3) mode of YCO with respect to temperature and as a function of Bi composition. More about this image found in Variation of the Raman shift of B_3g...

FIG. 7.13 The magnified regions of various locations of (a) experimentally observed domain pattern of tetragonal BFO and the respective (b) theoretical observation from tetragonal BFO. More about this image found in The magnified regions of various locations of (a) experimentally observed d...

and V_out, respectively, are the input and output voltages, respectively, and d, g, and s denote the drain, gate, and source terminals, respectively. More about this image found in Circuit symbols for MOS transistor (a) p-channel MOS (PMOS); V...

FIG. 3.13 (a) Substrate and film with lattice parameters a s and a 0 , respectively, where a s < a 0 . (b) Pseudomorphic growth with compressive strain. (c) Misfit dislocation of thin-film growth beyond critical thickness. More about this image found in (a) Substrate and film with lattice parameters a s and a 0...

FIG. 8.10 Microstructural evolution in a thin film system with A_Z = 1. From top left, in the clockwise direction, the microstructures correspond to (non-dimensional) time units: t = 2600, t = 3000, t = 4000, and t = 11 700, respectively. More about this image found in Microstructural evolution in a thin film system with A_Z...

FIG. 8.9 Microstructural evolution in a thin film system with A Z = 1 3 . From top left, the microstructures correspond to (non-dimensional) time units: t = 9600, t = 11 400, t = 23 600 and t = 489 400, respectively. More about this image found in Microstructural evolution in a thin film system with A Z = 1 3 ...

FIG. 10.3 (a) Low magnification TEM images on BT-CFO, (b) high magnification image of CFO/BCZT interface, (d) BCZT/CFO interface, and (c) and (d) magnified image of (b) and (e), respectively, showing lattice fringes across the interface. More about this image found in (a) Low magnification TEM images on BT-CFO, (b) high magnification image of...

and right columns, respectively. More about this image found in Microstructural evolution in a thin film system with A Z = 1 3 ...

, respectively. (c) Induced sheet charge at the interfaces of QW due to polarization. More about this image found in Band diagrams of (a) valence band and (b) conduction band in the GaN/InGaN ...

200, and t = 142 200, respectively. More about this image found in Microstructural evolution in a thin film system with isotropic elasticity a...

to the difference in the lattice parameters a and c from their average at 0 kV/cm, respectively. More about this image found in (a) ADF-STEM images and (b) lattice parameter (c) maps und...

800 and t = 251 000, respectively. Note that relatively, the break-up is faster for two films as compared to the case of a single film in the simulation cell. More about this image found in Microstructural evolution in a thin film system with isotropic elasticity a...

of percent change in Δ peak broadening of BCZT (110) and peak broadening of ME composite BCZT (110) with respect to grazing incidence angle. More about this image found in (a) The figure represents alpha(α) scan performed around BCZT (110) and CFO...

, t = 133 800 and t = 205 800, respectively. These times indicate that the growth slows down the break-up dynamics compared to the previous case of (near) static break-up. More about this image found in Microstructural evolution in a thin film system with isotropic elasticity, ...