FIG. 10.9 (a) shows the time-resolved current response of multilayers for a voltage pulse of 500 ns pulse width. Inset shows the half input pulse profile for the input pulse of 1.8 V amplitude and 500 ns pulse width. (b) Polarization-time curves obtained by integrating the I–t curve of multilayer samples. (c) Voltage–time and current–time curve for individual BCZT film. (d) Polarization-time curve for individual BCZT film. More about this image found in (a) shows the time-resolved current response of multilayers for a voltage p...

FIG. 1.2 An example of a pictorial representation from Wittmann et al. (1999) . Questions typically ask students to draw the shape of the rope at a specific time. This time is typically set to when the bases of the pulses overlap or when they have already passed each other. Variations of this picture represent one of the pulses higher or inverted. More about this image found in An example of a pictorial representation from Wittmann et al....

FIG. 13.5 Double pulse test (DPT) switching circuit (a) used to characterize hard-switching operation. Time-domain waveforms across DUT during operation (b) depicting the drain to source voltage (V_DS), the drain current (I_D) and an instance of gate current (I_G) alongside the gate double pulse train (pulse). The switching losses are the I_D–V_DS waveforms overlapping regions. More about this image found in Double pulse test (DPT) switching circuit (a) used to characterize hard-swi...

FIG. 11.1 (a) Shutter pulsing scheme used to avoid Si source oxidation during growth. (b) SIMS profile of Si dopants showing nearly flat profile while using the delta doping approach. Reproduced with permission from Krishnamoorthy et al., Appl. Phys. Express 10 (5), 051102 ( 2017a ). Copyright 2017 The Japan Society of Applied Physics. More about this image found in (a) Shutter pulsing scheme used to avoid Si source oxidation during growth....

FIG. 7.7 Schematic of (a) basic parallel plate electrostatic actuator ( Errando-Herranz et al., 2020 ) and (b) a comb drive for linear motion. Schematic of (c) a basic scratch drive actuator (SDA) ( Akiyama and Fujita, 1995 ). Step by step crawling motion of the actuator under pulse voltage input. (d) Pressing down of plate with rising voltage pushing the bushing forward. (e) Releasing of the SDA by falling voltage resulting in pulling the plate to right while pinning down the bush due to its shape. (f) Negative rise of voltage resulting in another pressing down of the beam resulting in the bushing moving to the left resulting in net rightward motion of the plate from the starting point. This process repeats for each half cycle. More about this image found in Schematic of (a) basic parallel plate electrostatic actuator ( Errando-Herr...

FIG. 8.25 (a) Schematic of a field-plated β-Ga₂O₃ trench SBD. (b) Cross-sectional scanning electron microscopy image of a fin channel. (c) Reverse breakdown characteristics of field-plated β-Ga₂O₃ trench SBDs. In comparison with regular β-Ga₂O₃ SBDs employing both mesa and field-plate terminations, the field-plated trench devices have a much lower leakage current and a much higher V_br. (d) Forward I–V characteristics and differential R_ON,sp of field-plated β-Ga₂O₃ trench SBDs under DC and pulsed conditions. A base voltage of 0 V, a pulse width of 1 µs, and a duty cycle of 0.1% are used for the pulsed measurements. Reprinted with permission from Li et al., IEEE Electron Device Lett. 41 (1), 107–110 (2020a). Copyright 2020 IEEE. More about this image found in (a) Schematic of a field-plated β-Ga₂O₃ trench SBD. (...