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1-20 of 3854 Search Results for
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Images
in Analysis of Physics Textbook Content
> The International Handbook of Physics Education Research: Special Topics
Published: March 2023
FIG. 16.4 The number of publications published in each decade according to the level of education. More about this image found in The number of publications published in each decade according to the level ...
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in Visualization and Mathematization: How Digital Tools Provide Access to Formal Physics Ideas
> The International Handbook of Physics Education Research: Special Topics
Published: March 2023
FIG. 21.2 Point-tracking the trajectory of a ball thrown vertically from a moving skateboard in Tracker. Video analysis of projectile motion using tablet computers as experimental tools. © IOP Publishing. Reproduced with permission. All rights reserved. (Taken from Klein et al., Phys. Educ. 49 (1), 37–40 (2014). Copyright 2014 IOP Publishing). More about this image found in Point-tracking the trajectory of a ball thrown vertically from a moving ska...
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Published: March 2023
FIG. 24.1 Publications illustrating the state of research between 2015–2020 situated in relation to previous studies. For each of the seven themes structuring the review, one example of the oldest and newest studies as well as the number of selected studies are given (some studies are referenced i... More about this image found in Publications illustrating the state of research between 2015–2020 situated ...
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in Visualization and Mathematization: How Digital Tools Provide Access to Formal Physics Ideas
> The International Handbook of Physics Education Research: Special Topics
Published: March 2023
FIG. 21.5 GeoGebra screenshot showing a model of an inclined plane. Reproduced from Marcuic et al. (2016). “Learning physics by building computer models—movements on inclined planes,” in Proceedings of the 11th International Scientific Conference on ELearning and Software for Education (Carol I National Defence University Publishing House, 2016), with the permission of the ADL ROMANIA. Copyright 2016 ADL ROMANIA. More about this image found in GeoGebra screenshot showing a model of an inclined plane. Reproduced fro...
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in Microscopic-Strain-Related Phenomena in Functional Oxides
> Strain Engineering in Functional Materials and Devices
Published: March 2023
FIG. 5.13 (a) Dependence of nanostrain on the incoherent interface of nanoparticles and (b) dependence of normalized maximum isotropic pinning force on nanostrain of the YBCO–BMO sample ( Coll et al., 2014 ). Reproduced with permission from Coll et al., Supercond. Sci. Technol. 27 , 044008 (2014). Copyright 2014 IoP Publishing. More about this image found in (a) Dependence of nanostrain on the incoherent interface of nanoparticles a...
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in First Principles Modeling of Strain Induced Effects in Functional Materials
> Strain Engineering in Functional Materials and Devices
Published: March 2023
FIG. 2.9 (a) Energetics and density of states of BaTiO3 (BTO) and PbTiO3 (PTO), (b) energetics, buckling (Δ) and polarization (P) of 1T MoS2, and (c) energetics, charge disproportionation, and octahedral distortion in Bi2−xSrxFeCrO6. Reproduced with permission from Cohen, Nature 358 , 136–138 (1992). Copyright 1992 Nature Publishing Group; Chanana and Waghmare, Phys. Rev. Lett. 123 , 037601 (2019). Copyright 2019 American Physical Society; and Rout and Srinivasan, Phys. Rev. Lett. 123 , 107201 (2019). Copyright 2019 American Physical Society. More about this image found in (a) Energetics and density of states of BaTiO3 (BTO) and PbTiO...
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in Electron Transport in β-Ga2O3 from First-Principles
> Ultrawide Bandgap β-Ga2O3 SemiconductorTheory and Applications
Published: February 2023
FIG. 7.2 Velocity and the impact ionization rates from Monte Carlo. (a) The velocity-field curves in β-Ga2O3 for three different directions at room temperature. Reproduced with permission from Ghosh and Singisetti, J. Appl. Phys. 122 , 035702 (2017a). Copyright 2017a AIP Publishing LLC. (b) Electronic bands in β-Ga2O3 computed under DFT. The conduction bands are scissor shifted to match the experimental bandgap. Reproduced with permission from Ghosh and Singisetti, J. Appl. Phys. 124 , 085707 (2018). Copyright 2020 AIP Publishing LLC. (c) The ionization rates along the two high-symmetry directions in the Brillouin zone. Reproduced with permission from Ghosh and Singisetti, J. Appl. Phys. 124 , 085707 (2018). Copyright 2020 AIP Publishing LLC. (d) The ionization rates with respect to energy for all the k points in the Brillouin zone. Reproduced with permission from Ghosh and Singisetti, J. Appl. Phys. 124 , 085707 (2018). Copyright 2020 AIP Publishing LLC. More about this image found in Velocity and the impact ionization rates from Monte Carlo. (a) The velocity...
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in Dopants in β-Ga2O3: From Theory to Experiments
> Ultrawide Bandgap β-Ga2O3 SemiconductorTheory and Applications
Published: February 2023
FIG. 6.13 (a) Formation energy diagram for NO dopants in β-Ga2O3 shown for Ga-rich conditions. (b) Corresponding atomic structures. (c) Calculated luminescence lines for optical transitions involving electrons in the conduction band recombining with holes at NO defects. Adapted from Lyons, Semicond. Sci. Technol. 33 (5), 05LT02 (2018). Copyright 2018 AIP Publishing LLC and Frodason et al., J. Appl. Phys. 127 (7), 075701 (2020). Copyright 2020 AIP Publishing LLC. More about this image found in (a) Formation energy diagram for NO dopants in β-Ga2O...
Book Chapter
Series: AIPP Books, Professional
Published: March 2023
EISBN: 978-0-7354-2551-4
ISBN: 978-0-7354-2548-4
... Bing , T. J. and Redish , E. F. , 2006 Physics Education Research Conference (AIP Publishing, 2007 ), Vol. 883 , pp. 26 – 29 . Blanton , M. and Kaput , J. , Proceedings of the 28th Conference of the International Group for the Psychology of Mathematics Education (Bergen...
Book Chapter
Series: AIPP Books, Professional
Published: December 2021
10.1063/9780735423831_009
EISBN: 978-0-7354-2383-1
ISBN: 978-0-7354-2380-0
... for Physics Education Research (PER). Key factors underpinning these contributions include soliciting and receiving support from major national scientific institutions, publishing and presenting research widely while maintaining high standards, and encouraging mutual support and exchange with an emerging...
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in Lateral Transistors on β-Ga2O3: Overview on Design, Technology, and Characterization
> Ultrawide Bandgap β-Ga2O3 SemiconductorTheory and Applications
Published: February 2023
FIG. 10.10 Plot of the specific ON-resistance RON × A vs breakdown voltage for benchmarking lateral β-Ga2O3 power transistors processed at FBH (red star) with recently published data from other groups. More about this image found in Plot of the specific ON-resistance RON × A vs b...
Images
Published: February 2023
FIG. 4.2 Growth rate dependence on Ga flux for various growth orientations. Reproduced with permission from Oshima et al., Semicond. Sci. Technol. 33 (1), 015013 (2017). Copyright 2017 IOP Publishing. More about this image found in Growth rate dependence on Ga flux for various growth orientations. Repro...
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in High Breakdown Voltage β-Ga2O3 Schottky Diodes
> Ultrawide Bandgap β-Ga2O3 SemiconductorTheory and Applications
Published: February 2023
FIG. 8.18 Schematic of a β-Ga2O3 SBD terminated with p-NiO FLRs alongside an unterminated device. Reprinted with permission from Gong et al., Appl. Phys. Lett. 118 (20), 202102 (2021). Copyright 2021 AIP publishing LLC. More about this image found in Schematic of a β-Ga2O3 SBD terminated with p...
Images
Published: February 2023
FIG. 9.4 SEM images of Ga2O3 ICP dry etched with (a) Cl2/Ar and (b) BCl3/Ar. Reprinted with permission from Pearton et al., Appl. Phys. Rev. 5 (1), 011301 (2018). Copyright 2018 AIP Publishing LLC. More about this image found in SEM images of Ga2O3 ICP dry etched with (a) Cl2...
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Published: February 2023
FIG. 3.8 Growth rate vs TMGa molar flow rate for Ga2O3 films grown using Agilis 500 and 700. Reprinted from Seryogin et al., Appl. Phys. Lett. 117 , 262101 (2020). Copyright 2020 AIP Publishing LLC. More about this image found in Growth rate vs TMGa molar flow rate for Ga2O3 films g...
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Published: February 2023
FIG. 4.4 Surface morphologies measured by AFM on various orientations grown by conventional PAMBE and MOCATAXY (indium catalyzed growth). Reproduced with permission from Mauze et al., APL Mater. 8 (2), 021104 (2020b). Copyright 2020b AIP Publishing LLC. More about this image found in Surface morphologies measured by AFM on various orientations grown by conve...
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Published: February 2023
FIG. 4.5 Temperature dependence of carrier concentration and mobility measured by Hall for the Sn-doped film grown by MOCATAXY. Reproduced with permission from Mauze et al., Appl. Phys. Lett. 117 (22), 222102 (2020a). Copyright 2020a AIP Publishing LLC. More about this image found in Temperature dependence of carrier concentration and mobility measured by Ha...
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in Lateral Transistors on β-Ga2O3: Overview on Design, Technology, and Characterization
> Ultrawide Bandgap β-Ga2O3 SemiconductorTheory and Applications
Published: February 2023
FIG. 10.5 Sheet resistance of nitrogen implanted β-Ga2O3 measured at T = 25 °C as a function of annealing temperature. Reprinted with permission from Tetzner et al., Appl. Phys. Lett. 113 , 172104 (2018). Copyright 2018 AIP Publishing LLC. More about this image found in Sheet resistance of nitrogen implanted β-Ga2O3 measur...
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in Dopants in β-Ga2O3: From Theory to Experiments
> Ultrawide Bandgap β-Ga2O3 SemiconductorTheory and Applications
Published: February 2023
FIG. 6.12 Formation energy diagram for Mg dopants in β-Ga2O3 shown for (a) Ga-rich (O-poor) and (b) O-rich (Ga-poor) conditions as adapted from Ritter et al., Appl. Phys. Lett. 113 (5), 052101 (2018). Copyright 2018 AIP Publishing LLC and Peelaers et al., APL Mater. 7 (2), 022519 (2019). Copyright 2019 AIP Publishing LLC. The figures also illustrate that moving the Fermi level away from the CBM with acceptor doping can also enhance the incorporation of donors such as deep donor IrGa impurities which were shown to be present in higher concentrations in Mg-doped single crystals ( Ritter et al., 2018 ). More about this image found in Formation energy diagram for Mg dopants in β-Ga2O3 sh...
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in Defects in β-Ga2O3: Theory and Microscopic Studies
> Ultrawide Bandgap β-Ga2O3 SemiconductorTheory and Applications
Published: February 2023
FIG. 5.2 Formation energy diagram of O interstitials and O vacancies, shown for (a) Ga-rich and (b) O-rich conditions. Adapted with permission from Ingebrigtsen et al., APL Mater. 7 (2), 022510 (2019). Copyright 2019 AIP Publishing LLC. More about this image found in Formation energy diagram of O interstitials and O vacancies, shown for (a) ...
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