FIG. 2.10 Parallel plate capacitor. More about this image found in Parallel plate capacitor.

FIG. 7.7 Schematic of (a) basic parallel plate electrostatic actuator ( Errando-Herranz et al., 2020 ) and (b) a comb drive for linear motion. Schematic of (c) a basic scratch drive actuator (SDA) ( Akiyama and Fujita, 1995 ). Step by step crawling motion of the actuator under pulse voltage input. (d) Pressing down of plate with rising voltage pushing the bushing forward. (e) Releasing of the SDA by falling voltage resulting in pulling the plate to right while pinning down the bush due to its shape. (f) Negative rise of voltage resulting in another pressing down of the beam resulting in the bushing moving to the left resulting in net rightward motion of the plate from the starting point. This process repeats for each half cycle. More about this image found in Schematic of (a) basic parallel plate electrostatic actuator ( Errando-Herr...

FIG. 1.16 (a) Vertical β-Ga₂O₃ Schottky diodes with field plate, (b) corresponding electric field profile showing the peak field (in red) redistributed by field plate ( Konishi et al., 2017 ), and (c) bevel field plate Schottky diodes with sidewall angles of 55.7° ( Joishi et al., 2018 ). More about this image found in (a) Vertical β-Ga₂O₃ Schottky diodes with field plate...

FIG. 8.3 Conception of the field-plate termination technique for a vertical diode structure, implemented here in a p–n junction diode. The surface electric field at the edge of the junction is modulated by an externally applied gate voltage (V_G). Reprinted with permission from Grove et al., IEEE Trans. Electron Devices 14 (3), 157–162 (1967). Copyright 1967 IEEE. More about this image found in Conception of the field-plate termination technique for a vertical diode st...

FIG. 8.4 Schematic of an SBD with a single-step field plate with length L_FP and height h_FP connected to the Schottky electrode. The × and ∗ symbols indicate the positions of peak off-state electric fields, whose intensities are determined by both L_FP and h_FP. More about this image found in Schematic of an SBD with a single-step field plate with length L...

FIG. 8.5 Schematic of an SBD with a beveled or slanted field plate. More about this image found in Schematic of an SBD with a beveled or slanted field plate.

FIG. 8.6 (a) Schematic of the first field-plated β-Ga₂O₃ SBD. (b) Forward current–voltage (I–V) characteristics of the device. (c) Reverse breakdown characteristics of the device. Reprinted with permission from Konishi et al., Appl. Phys. Lett. 110 (10), 103506 (2017). Copyright 2017 AIP Publishing LLC. More about this image found in (a) Schematic of the first field-plated β-Ga₂O₃ SBD. ...

FIG. 8.25 (a) Schematic of a field-plated β-Ga₂O₃ trench SBD. (b) Cross-sectional scanning electron microscopy image of a fin channel. (c) Reverse breakdown characteristics of field-plated β-Ga₂O₃ trench SBDs. In comparison with regular β-Ga₂O₃ SBDs employing both mesa and field-plate terminations, the field-plated trench devices have a much lower leakage current and a much higher V_br. (d) Forward I–V characteristics and differential R_ON,sp of field-plated β-Ga₂O₃ trench SBDs under DC and pulsed conditions. A base voltage of 0 V, a pulse width of 1 µs, and a duty cycle of 0.1% are used for the pulsed measurements. Reprinted with permission from Li et al., IEEE Electron Device Lett. 41 (1), 107–110 (2020a). Copyright 2020 IEEE. More about this image found in (a) Schematic of a field-plated β-Ga₂O₃ trench SBD. (...

FIG. 8.28 (a) Schematic of a field-plated β-Ga₂O₃ SBD with a double-side-cooling flip-chip package. (b) I–V waveforms of the double-side-cooled device in surge current tests. (c) I–V loops of the double-side-cooled device. Reprinted with permission from Xiao et al., IEEE Trans. Power Electron. 36 (8), 8565–8569 (2021). Copyright 2021 IEEE. More about this image found in (a) Schematic of a field-plated β-Ga₂O₃ SBD with a do...

FIG. 8.7 (a) Schematic of a β-Ga₂O₃ SBD with an ultrahigh-permittivity field-plate dielectric, where S1 corresponds to a 15-period BaTiO₃/SrTiO₃ superlattice as the field-plate oxide [(BTO/STO)₁₅ FP] and S2 corresponds to BaTiO₃ as the field-plate oxide (BTO FP). The cross-sectional transmission electron microscopy (TEM) image depicts the field-plated region of the S1 structure. (b) Forward I–V characteristics and differential R_ON,sp of a β-Ga₂O₃ SBD with (BTO/STO)₁₅ FP, a β-Ga₂O₃ SBD with BTO FP, and a reference SBD without a field plate. (c) Reverse breakdown characteristics of the three different SBD structures. Reprinted with permission from Roy et al., IEEE Electron Device Lett. 42 (8), 1140–1143 (2021). Copyright 2021 IEEE. More about this image found in (a) Schematic of a β-Ga₂O₃ SBD with an ultrahigh-perm...

FIG. 1.21 Lateral β-Ga₂O₃ power transistors (a) MESFET ( Higashiwaki et al., 2012 ), (b) MOSFET ( Higashiwaki et al., 2013 ) and (c) Field-plate β-Ga₂O₃ MESFET with breakdown voltage ∼4.4 kV with gate-pad-connected field plate ( Bhattacharyya et al., 2022 ). More about this image found in Lateral β-Ga₂O₃ power transistors (a) MESFET ( Higash...

FIG. 8.7 Microheater geometries of different shapes: (a) meander, (b) S-meander, (c) curved, (d) S-curved, (e) double spiral, (f) drive wheel, (g) elliptical, (h) circular, (i) plane plate, (j) fin shape, (k) honeycomb, and (l) irregular. Reproduced with permission Çakır et al., Sensors 16 (10), 1612 (2016). Copyright 2016 Author(s), licensed under a Creative Commons Attribution 3.0 Unported License. More about this image found in Microheater geometries of different shapes: (a) meander, (b) S-meander, (c)...

FIG. 8.9 (a) Schematics of beveled-mesa β-Ga₂O₃ SBDs with a ∼45° beveled field plate (BFP) and with a small-angle (∼1°) beveled field plate (SABFP). (b) Reverse breakdown characteristics of the BFP-SBD and SABFP-SBD showing higher V_br than those of mesa-free β-Ga₂O₃ SBDs that are either unterminated or terminated with a ∼45° beveled surface field plate (SFP; similar to Fig. 8.5 ). (c) Forward I–V characteristics and differential R_ON,sp of SABFP-SBDs with different anode diameters. Reprinted with permission from Allen et al., IEEE Electron Device Lett. 40 (9), 1399–1402 (2019). Copyright 2019 IEEE. More about this image found in (a) Schematics of beveled-mesa β-Ga₂O₃ SBDs with a ∼4...