FIG. 2.8 Operation profit for the three scenarios. More about this image found in Operation profit for the three scenarios.

FIG. 4.10 Two representative cyclic operations. More about this image found in Two representative cyclic operations.

FIG. 11.4 The closed-loop operation framework. More about this image found in The closed-loop operation framework.

FIG. 12.4 Schematic flow diagram of the proposed closed-loop operation of hydraulic fracturing processes ( Siddhamshetty et al., 2018 ). More about this image found in Schematic flow diagram of the proposed closed-loop operation of hydraulic f...

FIG. 6.8 (a) Measured power and normal operation limits, (b) fault detection based on the operation limit approach. More about this image found in (a) Measured power and normal operation limits, (b) fault detection based o...

FIG. 3.14 Structure of typical III-nitride LEDs. Device operation depends on the lateral current injection. The buffer layer is grown on a substrate at low temperatures to accommodate high lattice mismatch. (a) InGaN MQW-based LEDs for blue/green/yellow LEDs. AlGaN-based electron blocking layer is used to prevent injected electrons from escaping the active region. (b) AlGaN MQW-based UV LEDs. p-GaN is grown on p-AlGaN to prevent oxidation of aluminum. More about this image found in Structure of typical III-nitride LEDs. Device operation depends on the late...

FIG. 4.3 MOS operating characteristics. Reproduced with permission from Thompson, Intuitive Analog Circuit Design ( 2006 ), pp. 241–268. Copyright 2006 Elsevier. More about this image found in MOS operating characteristics. Reproduced with permission from Thompson,...

FIG. 7.14 (a) A waveguide switch operated by moving a waveguide into and out of the beam path between two waveguides. (b) Waveguide translation used to perform optical path routing ( Stepanovsky, 2019 ). More about this image found in (a) A waveguide switch operated by moving a waveguide into and out of the b...

FIG. 8.1 (a) Different operating modes of MC. Two principles: (i) microbalance-modification of resonance frequency (dynamic mode) and (ii) surface stress sensor-modification of deflection (static mode). Reprinted with permission from Dufour and Fadel, Sens. Actuators B Chem. 91 (1–3), 353–361 (2003). Copyright 2003 Elsevier. (b) Illustration of (i) bulk and (ii) surface micromachining processing steps forming suspended MCs. In bulk micromachining, the MC structure is directly etched into the wafer, which acts as the sacrificial layer, while in the surface micromachining, the wafer acts as the support and the sacrificial layer, typically SiO₂, is fabricated directly on the wafer. Reprinted with permission from Waggoner and Craighead, Lab Chip 7 (10), 1238 ( 2007 ). Copyright 2007 Royal Society of Chemistry. More about this image found in (a) Different operating modes of MC. Two principles: (i) microbalance-modif...

FIG. 9.7 (a) Operation principle of a capacitive (electrostatic) transducer. (b) Simple circuit representation for an electrostatic converter proposed by Roundy et al. (2008) . More about this image found in (a) Operation principle of a capacitive (electrostatic) transducer. (b) Sim...

FIG. 7.4 The plot of the dipole operator x ^ and the polarizability operator x 2 ^ clearly shows that the dipole operator is odd and the polarizability operator is even. More about this image found in The plot of the dipole operator x ^ and the polarizability operato...

FIG. 10.10 Real-time prediction of (a) capacity fade, (b) RUL, and (c) voltage-SoC dynamics for 30th operating cycle using the developed slow-OASIS and fast-OASIS models. More about this image found in Real-time prediction of (a) capacity fade, (b) RUL, and (c) voltage-SoC dyn...

FIG. 10.9 Prediction of inter-cyclic and intra-cyclic battery dynamics using OASIS as a two-timescale modeling approach (k = 1, …, m and s = 1, …, n denote operating cycle number and sampling time, respectively). More about this image found in Prediction of inter-cyclic and intra-cyclic battery dynamics using OASIS as...

FIG. 1.22 Experimentally obtained maximum operating temperature vs maximum reverse breakdown voltage of Schottky diodes showing β-Ga₂O₃ devices can reach high-temperature and high-breakdown operation with simpler designs compared to SiC and GaN ( Wang et al., 2019 ). More about this image found in Experimentally obtained maximum operating temperature vs maximum reverse br...