FIG. 3.2 Temperature-dependent Hall mobility (a) and charge density (b) for the four MOCVD grown samples (a, b, c, and d) using TEGa. The symbols are the measured data, and the solid lines represent the fitting calculated from the charge neutrality equation. Reprinted from Alema et al., APL Mater. 7 , 121110 (2019b). Copyright 2019b Authors, licensed under a Creative Commons Attribution (CC BY) license. More about this image found in Temperature-dependent Hall mobility (a) and charge density (b) for the four...

FIG. 3.7 Temperature-dependent Hall mobility (a) and charge density (b) for N₂O grown UID β-Ga₂O₃ film. (c) RT Hall mobility for the N₂O (the purple triangle) and pure O₂ (the orange box) grown UID β-Ga₂O₃. Reprinted from Alema et al., APL Mater. 8 , 021110 (2020a). Copyright 2020a Authors, licensed under a Creative Commons Attribution (CC BY) license. More about this image found in Temperature-dependent Hall mobility (a) and charge density (b) for N₂...

FIG. 3.11 Temperature dependent (12–395 K) Hall mobility (a) and carrier density (b) for lightly Si doped Ga₂O₃ films (samples a and b) grown using TMGa. The symbols are the measured data, and the solid lines represent the best fit calculated from the charge neutrality equation. Both samples were measured and analyzed at the Air Force Research Laboratory (AFRL) by Dr. Adam T. Neal. The data for sample b is reprinted from Seryogin et al., Appl. Phys. Lett. 117 , 262101 (2020). Copyright 2020 AIP Publishing LLC. More about this image found in Temperature dependent (12–395 K) Hall mobility (a) and carrier density (b) ...

FIG. 3.12 Electron mobility vs free carrier concentration for Si- or Ge doped β-Ga₂O₃ epitaxial films grown by MOCVD using TEGa and TMGa precursors. The films were doped with SiH₄ balanced in He or N₂ (a), GeH₄ balanced in N₂ (b), and Si₂H₆ diluted in N₂ (c). More about this image found in Electron mobility vs free carrier concentration for Si- or Ge doped β-Ga...

FIG. 3.16 Temperature dependent (20–300 K) Hall mobility (a) and carrier density (b) for lightly Ge doped Ga₂O₃ films grown using TEGa (a/TEGa) and TMGa (b/TMGa and c/TMGa) precursors. The symbols are the measured data, and the solid lines represent the fitting calculated from the charge neutrality equation. More about this image found in Temperature dependent (20–300 K) Hall mobility (a) and carrier density (b) ...

FIG. 4.5 Temperature dependence of carrier concentration and mobility measured by Hall for the Sn-doped film grown by MOCATAXY. Reproduced with permission from Mauze et al., Appl. Phys. Lett. 117 (22), 222102 (2020a). Copyright 2020a AIP Publishing LLC. More about this image found in Temperature dependence of carrier concentration and mobility measured by Ha...

FIG. 7.1 Overview of low field mobility. (a) The conventional unit cell of β-Ga₂O₃ with the Cartesian direction convention followed in this chapter. Reproduced with permission from Ghosh and Singisetti, J. Appl. Phys. 122 , 035702 (2017a). Copyright 2017a AIP Publishing LLC. (b) The calculated scattering strength of different POP phonon modes for three different electron energies. Reproduced with permission from Ghosh and Singisetti, Appl. Phys. Lett. 109 , 072102 (2016). (c) Dependence of electron mobility with temperature and comparison with experimentally measured Hall mobility. Reproduced with permission from Ghosh and Singisetti, Appl. Phys. Lett. 109 , 072102 (2016). Copyright 2016 AIP Publishing LLC. (d) Dependence of electron mobility on electron concentration for two different directions. Triangles indicate phonon only scattering limited mobility, while circles represent the mobility including both phonon and impurity scatterings. Reproduced with permission from Ghosh and Singisetti, J. Mater. Res. 32 , 4142–4152 (2017b). Copyright 2016 Springer Nature. More about this image found in Overview of low field mobility. (a) The conventional unit cell of β-Ga...

FIG. 7.4 (a) 2-DEG mobility as a function of scattering mechanisms and (b) comparison between experimentally measured and calculated 2-DEG mobility for a similar heterostructure device. Here, n_2D is 2-DEG density and d is spacer thickness. Reproduced with permission from Kumar et al., J. Appl. Phys. 128 , 105703 (2020). Copyright 2020 AIP Publishing LLC. More about this image found in (a) 2-DEG mobility as a function of scattering mechanisms and (b) compariso...

FIG. 11.8 (a) Comparison of experimental effective mobility values with scattering theory at 77 and 300 K. The dotted line shows the additional mobility required to explain the measured values at 300 K, (b) output characteristics of a β-(Al_0.17Ga_0.83)₂O₃/Ga₂O₃ thin spacer MODFET, and (c) transfer characteristics of the β-(Al_0.17Ga_0.83)₂O₃/Ga₂O₃ thin spacer MODFET measured at V_D = 5 V. Reproduced with permission from Kalarickal et al., J. Appl. Phys. 127 , 215706 (2020). Copyright 2020 AIP Publishing LLC. More about this image found in (a) Comparison of experimental effective mobility values with scattering th...

FIG. 3.1 (a) Best LT mobilities for MBE grown 2DEG β(Al,Ga)₂O₃/β-Ga₂O₃ ( Zhang et al., 2018 ), HVPE grown Ga₂O₃ ( Goto et al., 2018 ), and MOCVD grown Ga₂O₃ at the Ohio State University (MOCVD/OSU) ( Feng et al., 2020b ) and Agnitron Technology (MOCVD/Agni) ( Alema et al., 2019b ; and Seryogin et al., 2020 ). MOCVD films were grown using either triethylgallium (TEGa) or trimethylgallium (TMGa) sources. (b) LT mobilities for TEGa/TMGa grown β-Ga₂O₃ films compared with the state-of-the-art LT mobilities for 4H-SiC ( Pernot et al., 2000 ) and GaN ( Huang et al., 2001 ). More about this image found in (a) Best LT mobilities for MBE grown 2DEG β(Al,Ga)₂O₃...