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1-20 of 62 Search Results for
migration energy of point defects
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
10.1063/9780735425033_005
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
... with scanning transmission electron microscopy (STEM), we elucidate the properties of point defects in gallium oxide. We discuss the electronic behavior of O interstitials, O vacancies, Ga interstitials, Ga vacancies, and hydrogenated Ga vacancies. Gallium vacancies, in particular, have low formation energies...
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
10.1063/9780735425033_012
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
.... FIG. 12.2 (a) Shows the empirically determined relationship between the inverse of the lattice constant and the increasing displacement energy. Reproduced with permission from Corbett, J. W. and Bourgoin, J. C., Point Defects in Solids: Volume 2 Semiconductors and Molecular Crystals...
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
0
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
.... , Jiang , H. , Costales , A. , and Pandey , R. , “ Energetics and migration of point defects in Ga2O3 ,” Phys. Rev. B 72 ( 18 ), 184103 ( 2005 ). 10.1103/PhysRevB.72.184103 Blood , P. and Orton , J. W. , The Electrical Characterization...
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
0
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
.... , Kresse , G. , Janotti , A. , “ First-principles calculations for point defects in solids ,” Rev. Mod. Phys. 86 , 253 ( 2014 ). 10.1103/RevModPhys.86.253 Freysoldt , C. , Neugebauer , J. , and Van de Walle , C. G. , “ Fully ab initio finite-size corrections for charged...
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
10.1063/9780735425033_006
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
..., but no shallow acceptors as in (b) due to fundamental limitations of the electronic structure. Characterization of Donor Dopants from Theory Donors in Ga2O3 from DFT calculations As illustrated in Fig. 6.1 , the introduction of point defects or impurities introduces electronic states...
Book
Series: AIPP Books, Professional
Published: March 2023
10.1063/9780735425514
EISBN: 978-0-7354-2551-4
ISBN: 978-0-7354-2548-4
Book Chapter
Series: AIPP Books, Methods
Published: November 2022
10.1063/9780735424197_007
EISBN: 978-0-7354-2419-7
ISBN: 978-0-7354-2416-6
... around the defect can occur, migration along this pathway is difficult but possible. The residence time for sodium at the various “saddle points” will necessarily be short—and all of this is only for a single hop. For useful long-range migration, the trick needs to be repeated many times. Structures...
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
10.1063/9780735425033_003
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
... Ga2O3 thin films and points out challenges that require future optimization to grow epitaxial layers suitable for various power device architectures. Introduction β-Ga2O3 is a promising ultra-wide bandgap semiconductor for high voltage power devices due to its unique material...
Book
Series: AIPP Books, Principles
Published: February 2023
10.1063/9780735425163
EISBN: 978-0-7354-2516-3
ISBN: 978-0-7354-2513-2
Book Chapter
Series: AIPP Books, Methods
Published: November 2022
10.1063/9780735424197_006
EISBN: 978-0-7354-2419-7
ISBN: 978-0-7354-2416-6
... curved channels via a one-dimensional zigzag pathway along the b direction of the unit cell, effectively hemmed in by Fe cations and the phosphate polyanion. Migration in other directions is only possible via Li Fe ′ anti-site defects ( Adams, 2010 ). One important metric that can...
Book
Series: AIPP Books, Methods
Published: November 2022
10.1063/9780735424197
EISBN: 978-0-7354-2419-7
ISBN: 978-0-7354-2416-6
Book
Series: AIPP Books, Methods
Published: December 2022
10.1063/9780735425422
EISBN: 978-0-7354-2542-2
ISBN: 978-0-7354-2540-8
Book Chapter
Series: AIPP Books, Methods
Published: December 2022
10.1063/9780735425422_011
EISBN: 978-0-7354-2542-2
ISBN: 978-0-7354-2540-8
... al., 2017 ; Ganguly et al., 2019 ; He et al., 2020 ; Yang et al., 2020 ; Shanker et al., 2021 ; and Batool et al., 2022 ). The high surface to volume ratio, abundance of active surface defects, large contact area, short electron/hole migration...
Book Chapter
Series: AIPP Books, Methods
Published: December 2022
10.1063/9780735425422_001
EISBN: 978-0-7354-2542-2
ISBN: 978-0-7354-2540-8
.... The linearity of a monolayer graphene at the Dirac point causes a quantum Hall effect, which aids in the exploration of a new subject of “Fermi–Dirac” physics ( Liu et al., 2020 ). Even at a thickness of one atom, this material is an amazing thermal and electrical conductor and is proposed for various...
Book Chapter
Series: AIPP Books, Methods
Published: December 2022
10.1063/9780735425422_004
EISBN: 978-0-7354-2542-2
ISBN: 978-0-7354-2540-8
... positive shifts, while C 1 s and N 1 s showed negative shifts under irradiation of light. The opposite changes in binding energy with and without irradiation indicate that photoinduced electrons in TiO2 migrate to sulfur-doped g-C3N4 during light illumination. Zhang et...
Book Chapter
Series: AIPP Books, Methods
Published: November 2022
10.1063/9780735424197_002
EISBN: 978-0-7354-2419-7
ISBN: 978-0-7354-2416-6
... for coherent scattering length indicate that an element is a stronger scatterer of neutrons. We can note some important points summarized for common elements of interest in energy storage materials in Table 2.2 . Firstly, neutron scattering length is not correlated with atomic number—neighboring atoms often...
Book Chapter
Series: AIPP Books, Principles
Published: November 2022
10.1063/9780735424470_004
EISBN: 978-0-7354-2447-0
ISBN: 978-0-7354-2444-9
... migration inside the channel limit the response time of OECTs (µs ∼ ms) ( Rivnay et al., 2015 ). However, the bulk transport property in OECT also releases different restrictions during fabrication and enables the OECT to be made into various form factors. In terms of other electrical...
Book Chapter
Series: AIPP Books, Methods
Published: December 2022
10.1063/9780735425422_010
EISBN: 978-0-7354-2542-2
ISBN: 978-0-7354-2540-8
... structural defects. The G mode intensity displays a strong angle-dependence for twisted bilayer graphene ( Carozo et al., 2011 ; and Havener et al., 2012 ). Havaner et al. observed a quantitative relationship between band-integrated area, twist angle, and laser excitation energies...
Book Chapter
Series: AIPP Books, Principles
Published: November 2022
10.1063/9780735424470_005
EISBN: 978-0-7354-2447-0
ISBN: 978-0-7354-2444-9
... of lateral flow assays, i.e., pregnancy tests, has established the success of point-of care (POC) systems in clinical diagnostics. Moreover, it is largely accepted that early diagnosis is of paramount importance for the prevention and treatment of diseases, contributing to lower the costs of healthcare...
Book
Series: AIPP Books, Principles
Published: November 2022
10.1063/9780735425194
EISBN: 978-0-7354-2519-4
ISBN: 978-0-7354-2508-8
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