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metalorganic vapor phase epitaxy (MOVPE)

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Book Chapter
Series: AIPP Books, Principles
Published: March 2023
10.1063/9780735425590_003
EISBN: 978-0-7354-2559-0
ISBN: 978-0-7354-2556-9
... as the substrate for optical and electrical devices using hydride vapor phase epitaxy (HVPE) or metalorganic vapor phase epitaxy (MOVPE) has been a common practice. However, one of the limiting factors of such growth is the bowing of the wafers, which is introduced through intrinsic stress during growth...
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
0
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
... by metalorganic vapor phase epitaxy: Expanding the growth window ,” Appl. Phys. Lett.   117 , 142102 ( 2020 ). 10.1063/5.0023778 Bhattacharyya , A. , Ranga , P. , Roy , S. , Peterson , C. , Alema , F. , Seryogin , G. , Osinsky , A. , and Krishnamoorthy , S. , “ Multi-kV...
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
10.1063/9780735425033_003
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
... , A. , Ranga , P. , Roy , S. , Ogle , J. , Whittaker-Brooks , L. , and Krishnamoorthy , S. , “ Low-temperature homoepitaxy of (010) β-Ga2O3 by metalorganic vapor phase epitaxy: Expanding the growth window ,” Appl. Phys. Lett.   117 , 142102 ( 2020 ). 10.1063...
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
10.1063/9780735425033_011
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
... -Ga2O3 by metalorganic vapor phase epitaxy: Expanding the growth window ,” Appl. Phys. Lett.   117 ( 14 ), 142102 ( 2020 ). 10.1063/5.0023778 Bhattacharyya , A. , Ranga , P. , Roy , S. , Peterson , C. , Alema , F. , Seryogin , G. , Osinsky , A. , and Krishnamoorthy...
Book
Book Cover Image
Series: AIPP Books, Principles
Published: March 2023
10.1063/9780735425590
EISBN: 978-0-7354-2559-0
ISBN: 978-0-7354-2556-9
Book Chapter
Series: AIPP Books, Methods
Published: December 2020
10.1063/9780735422698_003
EISBN: 978-0-7354-2269-8
ISBN: 978-0-7354-2270-4
... section filling time dislocation-related defect isolated point defect metalorganic vapor phase epitaxy (MOVPE) hydride vapor phase epitaxy (HVPE) electron irradiation proton irradiation first-principles calculation Heyd-Scuseria-Ernzerhof (HSE) activation energy zero-phonon line (ZPL) carbon...
Book Chapter
Series: AIPP Books, Methods
Published: December 2020
10.1063/9780735422698_008
EISBN: 978-0-7354-2269-8
ISBN: 978-0-7354-2270-4
... growth methods shows that the unified growth condition of the upper p-n junction via metalorganic vapor phase epitaxy (MOVPE) is preferable. The electrical characteristics of all dislocation types under the bias stress should be widely studied. As an example, Rackauskas et al...
Book Chapter
Series: AIPP Books, Methods
Published: December 2020
0
EISBN: 978-0-7354-2269-8
ISBN: 978-0-7354-2270-4
....   Sawada , T.   Narita , M.   Kanechika , T.   Uesugi , T.   Kachi , M.   Horita , T.   Kimoto , and J.   Suda , “ Sources of carrier compensation in metalorganic vapor phase epitaxy-grown homoepitaxial n-type GaN layers with various doping concentrations ,” Appl. Phys. Express   11...
Book Chapter
Series: AIPP Books, Methods
Published: December 2020
0
EISBN: 978-0-7354-2269-8
ISBN: 978-0-7354-2270-4
...References References 1 H.   Amano , N.   Sawaki , I.   Akasaki , and Y.   Toyoda , “ Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer ,” Appl. Phys. Lett.   48 ( 5 ), 353 ( 1986 ) 10.1063/1.96549 . 2 H...
Book Chapter
Series: AIPP Books, Methods
Published: December 2020
10.1063/9780735422698_004
EISBN: 978-0-7354-2269-8
ISBN: 978-0-7354-2270-4
...) z contrast Mg segregation pyramidal inversion domain (PID) HAADF-STEM image simulation metalorganic vapor phase epitaxy (MOVPE) Mg-ion implantation ultra-high pressure annealing (UHPA) interstitial-type extended defects vacancy-type extended defects migration energy of point defects energy...
Book
Book Cover Image
Series: AIPP Books, Methods
Published: December 2020
10.1063/9780735422698
EISBN: 978-0-7354-2269-8
ISBN: 978-0-7354-2270-4
Book Chapter
Series: AIPP Books, Methods
Published: December 2020
10.1063/9780735422698_006
EISBN: 978-0-7354-2269-8
ISBN: 978-0-7354-2270-4
... mm ( | | [ 1 2 ¯ 10 ] ) × 0.3 mm. 5 µm-thick GaN layers doped with Si of 1 × 1016 cm−3 on a polished m-plane surface were grown by a metalorganic vapor phase epitaxy (MOVPE) method. Figure 6.6(a) depicts the x , y -dependent bending...
Book Chapter
Series: AIPP Books, Methods
Published: December 2020
0
EISBN: 978-0-7354-2269-8
ISBN: 978-0-7354-2270-4
... A. Y.   Polyakov , I.-H.   Lee , N. B.   Smirnov , A. V.   Govorkov , E. A.   Kozhukhova , and S. J.   Pearton , “ Comparison of hole traps in n-GaN grown by hydride vapor phase epitaxy, metal organic chemical vapor deposition, and epitaxial lateral overgrowth ,” J. Appl. Phys.   109...
Book Chapter
Series: AIPP Books, Methods
Published: December 2020
10.1063/9780735422698_001
EISBN: 978-0-7354-2269-8
ISBN: 978-0-7354-2270-4
... the incorporation of dopants in the active layer. References References 1 H.   Amano , N.   Sawaki , I.   Akasaki , and Y.   Toyoda , “ Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer ,” Appl. Phys. Lett.   48 ( 5 ), 353 ( 1986 ) 10.1063...
Book Chapter
Series: AIPP Books, Methods
Published: December 2020
0
EISBN: 978-0-7354-2269-8
ISBN: 978-0-7354-2270-4
... , and A. A.   Yamaguchi , “ Thick GaN epitaxial growth with low dislocation density by hydride vapor phase epitaxy ,” Jpn. J. Appl. Phys.   36 ( Part 2, 7B ), L899 – L902 ( 1997 ). doi:10.1143/JJAP.36.L899 8 S.   Nakamura , M.   Senoh , S.   Nagahama , N.   Iwasa , T.   Yamada , T...
Book Chapter
Series: AIPP Books, Methods
Published: December 2020
10.1063/9780735422698_005
EISBN: 978-0-7354-2269-8
ISBN: 978-0-7354-2270-4
... evidence of such diffusion processes. 95 For this, the p-GaN layer of a vertical p-n junction grown by a metalorganic vapor phase epitaxy (MOVPE) method was intentionally removed so that Mg diffusion could be investigated only in the n-GaN drift layer. Etch...
Book Chapter
Series: AIPP Books, Methods
Published: December 2020
0
EISBN: 978-0-7354-2269-8
ISBN: 978-0-7354-2270-4
... , P.   De Mierry , S.   Dalmasso , M.   Leroux , and P.   Gibart , “ Pyramidal defects in metalorganic vapor phase epitaxial Mg doped GaN ,” Appl. Phys. Lett.   77 ( 6 ), 880 – 882 ( 2000 ). doi:10.1063/1.1306421 43 Z.   Liliental-Weber , M.   Benamara , W...
Book Chapter
Series: AIPP Books, Methods
Published: December 2020
10.1063/9780735422698_002
EISBN: 978-0-7354-2269-8
ISBN: 978-0-7354-2270-4
....-H.   Lee , N. B.   Smirnov , A. V.   Govorkov , E. A.   Kozhukhova , and S. J.   Pearton , “ Comparison of hole traps in n-GaN grown by hydride vapor phase epitaxy, metal organic chemical vapor deposition, and epitaxial lateral overgrowth ,” J. Appl. Phys.   109 ( 12 ), 123701-1...