FIG. 16.3 Proportion of publications according to education level. More about this image found in Proportion of publications according to education level.

FIG. 16.4 The number of publications published in each decade according to the level of education. More about this image found in The number of publications published in each decade according to the level ...

FIG. 13.2 Scales of interactions and themes that cut across those levels. More about this image found in Scales of interactions and themes that cut across those levels.

FIG. 5.6 Quests, levels, currency and points. More about this image found in Quests, levels, currency and points.

FIG. 14.2 The 39 papers that did PTER about the specified education levels. More about this image found in The 39 papers that did PTER about the specified education levels.

FIG. 8.4 (a) Schematic of a self-leveling capacitive VOC sensor. (b) SEM image of the self-leveling sensor (i) 450 µm long device with PDMS polymer and (ii) magnified image of the suspended top electrode of the device with etch holes (i) Reproduced with permission from Likhite et al., Sens. Actuators B Chem. 311 , 127817 (2020). Copyright 2020 Elsevier. (c) SEM images of AlGaN/GaN heterostructure based dual channel MC heater design [(i) and (ii)] SEM images of a monolithic tip dual channel MC heater. The sensor and heater channels are visible in (ii). (iii) and (iv) Split tip dual channel MC heater with sensor and heater channels marked in (iv). Reproduced with permission from Jahangir and Koley, Sci. Rep. 6 , 28735 (2016). Copyright 2020 Author(s), licensed under a Creative Commons Attribution 3.0 Unported License. (d) Graphene membrane resonators (i) angled SEM image of suspended graphene membranes over fabricated trenches in SiO₂. (ii) Angled SEM of an array of graphene membranes. (iii) Optical image of a large array of graphene membranes. Reprinted with permission from van der Zande et al., Nano Lett. 10 (12), 4869–4873 ( 2010 ). Copyright 2010 American Chemical Society. More about this image found in (a) Schematic of a self-leveling capacitive VOC sensor. (b) SEM image of th...

FIG. 6.5 Silicon dopant energy level detected from (a) temperature-dependent Hall concentration fitted with two-donor model showing a shallow donor level at 40 meV and deep donor level at 150 meV ( Feng et al., 2020 ). (b) The secondary level was also observed from admittance spectroscopy (capacitance–frequency at different temperatures). The arrow indicates the presence of inflection point in the C–f plot associated with the deep trap emission that causes dispersion at higher frequencies ( Neal et al., 2017 ). More about this image found in Silicon dopant energy level detected from (a) temperature-dependent Hall co...

FIG. 6.6 The deep donor level E_d2 at ∼E_C–0.12 eV (a) increases with Si doping in β-Ga₂O₃ ( Ghadi et al., 2020a ) and (b) associated effect of E_d2 level with an estimated increase of on-resistance due to incomplete ionization during forward bias operation of β-Ga₂O₃ Schottky diodes ( Neal et al., 2017 ). More about this image found in The deep donor level E_d2 at ∼

FIG. 6.8 Sn dopant level (a) detection from temperature-dependent Hall measurements showing the donor energy level at 77 meV ( Mauze et al., 2020 ) and (b) comparison of Sn and Si in terms of available free carrier from Hall measurements vs SIMS concentration showing a drop of carrier concentration from Sn at high doping levels ( Baldini et al., 2016 ). More about this image found in Sn dopant level (a) detection from temperature-dependent Hall measurements ...

FIG. 6.10 Fe dopant level detection (a) DLTS studies revealing a defect state at E2 = E_C–0.8 eV that was quite insensitive to radiation indicating an extrinsic source and (b) the E2 level tracks well to increase in Fe concentration from SIMS. Reproduced with permission from Ingebrigtsen et al., Appl. Phys. Lett. 112 , 042104 (2018). Copyright 2018 AIP Publishing LLC. More about this image found in Fe dopant level detection (a) DLTS studies revealing a defect state at

FIG. 1.7 Deep levels in Al_xGa_1-xN as a function of Al composition showing shallow to deep level transition of donor levels as the material transforms from WBG GaN to UWBG Al_xGa_1-xN ( Kamyczek et al., 2012 ). More about this image found in Deep levels in Al_xGa_1-xN as a function of Al composit...

FIG. 6.17 The calculated transition levels of several candidate donor dopants in β-(Al_xGa_1–x)₂O₃ alloys shown as a function of Al content, as adapted with permission from (a) Varley et al., Appl. Phys. Lett. 116 , 172104 (2020). Copyright 2020 AIP Publishing LLC and (b) Mu et al., Phys. Rev. B 105 (2022). Copyright 2020 AIP Publishing LLC. The lines denote the ε(±) transition for C, Si, and Sn, and the ε(±) transition for Ge, Zr, Hf, and Ta dopants on the most favorable cation sites. The CBM energy (shaded green and yellow) is plotted with respect to the VBM energy of Ga₂O₃ for all compositions using the calculated energies from Peelaers et al. (2018) . The Al content at which a given dopant's defect level falls within the bandgap and thus the dopant is no longer expected to efficiently ionize at room temperature is included in parentheses. More about this image found in The calculated transition levels of several candidate donor dopants in β-(A...