FIG. 2.9 (a) Energetics and density of states of BaTiO₃ (BTO) and PbTiO₃ (PTO), (b) energetics, buckling (Δ) and polarization (P) of 1T MoS₂, and (c) energetics, charge disproportionation, and octahedral distortion in Bi_2−xSr_xFeCrO₆. Reproduced with permission from Cohen, Nature 358 , 136–138 (1992). Copyright 1992 Nature Publishing Group; Chanana and Waghmare, Phys. Rev. Lett. 123 , 037601 (2019). Copyright 2019 American Physical Society; and Rout and Srinivasan, Phys. Rev. Lett. 123 , 107201 (2019). Copyright 2019 American Physical Society. More about this image found in (a) Energetics and density of states of BaTiO₃ (BTO) and PbTiO...

FIG. 2.6 Conductivity vs carrier concentration of {110} GB calculated using the Boltzman transport equation. Reproduced with permission from Raghunathan et al., Nano Lett. 14 , 4943–4950 (2014). Copyright 2014 American Chemical Society. More about this image found in Conductivity vs carrier concentration of {110} GB calculated using the Bolt...

FIG. 2.1 Schematics of (top) octahedral distortion in non-cubic structures as compared to the cubic oxides; (bottom) various grain boundary structures and c-Si. Reproduced with permission from Raghunathan et al., Nano Lett. 14 , 4943–4950 (2014). Copyright 2014 American Chemical Society. More about this image found in Schematics of (top) octahedral distortion in non-cubic structures as compar...

FIG. 2.3 Electronic structures of (a) monoclinic and orthorhombic LaVO₃ in bulk form as well as under strain and (b) different GB structures. Reproduced with permission from Raghunathan et al., Nano Lett. 14 , 4943–4950 (2014). Copyright 2014 American Chemical Society; and Jana et al., Phys. Rev. B 102 , 235108 (2020). Copyright 2020 American Physical Society. More about this image found in Electronic structures of (a) monoclinic and orthorhombic LaVO₃ i...

FIG. 3.10 An electrostatic switch printed on a Si wafer: (a) and (b) scanning electron micro-graphs and (c) and (d) schematics showing the working of the switch. Reprinted with permission Park et al., Nano Lett. 13 (11), 5355–5360 (2013). Copyright 2013 American Chemical Society. More about this image found in An electrostatic switch printed on a Si wafer: (a) and (b) scanning electro...

FIG. 2.2 (a) Unit cells of monoclinic and orthorhombic LaVO₃ with corresponding V–O–V bond angles and V–O bond lengths. (b) Bond length distributions of the three GB structures. Reproduced with permission from Raghunathan et al., Nano Lett. 14 , 4943–4950 (2014). Copyright 2014 American Chemical Society; and Jana et al., Phys. Rev. B 102 , 235108 (2020). Copyright 2020 American Physical Society. More about this image found in (a) Unit cells of monoclinic and orthorhombic LaVO₃ with corresp...

FIG. 2.7 Optical absorption coefficients obtained using DFT for (a) GB structures, (b) MoS₂/AlN bilayer heterostructure, and (c) Co₃O₄. Reproduced with permission from Raghunathan et al., Nano Lett. 14 , 4943–4950 (2014). Copyright 2014 American Chemical Society; Li et al., Phys. Chem. Chem. Phys. 20 , 29131–29141 (2018). Copyright 2018 Royal Society of Chemistry; and Smartm et al., Phys. Rev. Mater. 3 , 102401(R) (2019). Copyright 2019 American Physical Society. More about this image found in Optical absorption coefficients obtained using DFT for (a) GB structures, (...

FIG. 8.18 Schematic of a β-Ga₂O₃ SBD terminated with p-NiO FLRs alongside an unterminated device. Reprinted with permission from Gong et al., Appl. Phys. Lett. 118 (20), 202102 (2021). Copyright 2021 AIP publishing LLC. More about this image found in Schematic of a β-Ga₂O₃ SBD terminated with p...

FIG. 3.8 Growth rate vs TMGa molar flow rate for Ga₂O₃ films grown using Agilis 500 and 700. Reprinted from Seryogin et al., Appl. Phys. Lett. 117 , 262101 (2020). Copyright 2020 AIP Publishing LLC. More about this image found in Growth rate vs TMGa molar flow rate for Ga₂O₃ films g...

FIG. 4.5 Temperature dependence of carrier concentration and mobility measured by Hall for the Sn-doped film grown by MOCATAXY. Reproduced with permission from Mauze et al., Appl. Phys. Lett. 117 (22), 222102 (2020a). Copyright 2020a AIP Publishing LLC. More about this image found in Temperature dependence of carrier concentration and mobility measured by Ha...

FIG. 10.5 Sheet resistance of nitrogen implanted β-Ga₂O₃ measured at T = 25 °C as a function of annealing temperature. Reprinted with permission from Tetzner et al., Appl. Phys. Lett. 113 , 172104 (2018). Copyright 2018 AIP Publishing LLC. More about this image found in Sheet resistance of nitrogen implanted β-Ga₂O₃ measur...

FIG. 10.2 I–V curves measured between two contacts (as-deposited Ti/Au) fabricated with and without RIE treatment on n-Ga₂O₃ substrates. Reprinted with permission from Higashiwaki et al., Appl. Phys. Lett. 100 , 013504 (2012). Copyright 2012 AIP Publishing LLC. More about this image found in I–V curves measured between two contacts (as-deposited Ti/Au) fabricated wi...

FIG. 8.20 Conception of the pinch rectifier or JBSD structure. The schematics illustrate (a) the current flow pattern in the forward conduction mode and (b) the depletion region in the reverse blocking mode. Reprinted with permission from Baliga, IEEE Electron Device Lett. 5 (6), 194–196 (1984... More about this image found in Conception of the pinch rectifier or JBSD structure. The schematics illustr...

FIG. 8.6 (a) Schematic of the first field-plated β-Ga₂O₃ SBD. (b) Forward current–voltage (I–V) characteristics of the device. (c) Reverse breakdown characteristics of the device. Reprinted with permission from Konishi et al., Appl. Phys. Lett. 110 (10), 103506 (2017). Copyright 2017 AIP Publishing LLC. More about this image found in (a) Schematic of the first field-plated β-Ga₂O₃ SBD. ...

FIG. 6.7 Effect of (a) growth temperature and (b) Ga flux on Sn and Ge doping in PAMBE growth. The Ge dopants show a drop in concentration likely related to site competition between Ga and Ge. Reproduced with permission from Mauze et al., Appl. Phys. Lett. 117 (22), 222102 (2020). Copyright 2020 AIP Publishing LLC. More about this image found in Effect of (a) growth temperature and (b) Ga flux on Sn and Ge doping in PAM...

FIG. 8.16 Conception of the FMR termination technique for a vertical diode structure, implemented here in a p–n junction diode: (a) cross-sectional structure and (b) qualitative potential distribution at reverse bias. Reprinted with permission from Yilmaz and Van Dell, IEEE Electron Device Lett. 6 (11), 600–601 (1985). Copyright 1985 IEEE. More about this image found in Conception of the FMR termination technique for a vertical diode structure,...