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1-20 of 100 Search Results for
isolated point defect
Book Chapter
Book: Toward Better Photovoltaic Systems: Design, Simulation, Optimization, Analysis, and Operations
Series: AIPP Books, Principles
Published: March 2023
10.1063/9780735425613_006
EISBN: 978-0-7354-2561-3
ISBN: 978-0-7354-2560-6
... arrays ( Mellit and Kalogirou, 2022a ). Table 6.1 Type of faults in PV modules/arrays. Type of fault Causes Internal Effects and safety issues External Hot spot defect Soiling, Snow, Dust, Artificial shadow. High resistance, Solder points, Current...
Book Chapter
Series: AIPP Books, Principles
Published: March 2023
10.1063/9780735425590_011
EISBN: 978-0-7354-2559-0
ISBN: 978-0-7354-2556-9
... to grow 2D monolayers ( Shanmugam et al., 2022 ). Nonetheless, the synthesis of defect-free large 2D hetero-structures with one or few atomic layer thickness remains a big challenge. This can be maneuvered by a thorough understanding of the role point defects and grain boundaries in 2D systems...
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
10.1063/9780735425033_005
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
.... Farzana (AIP Publishing, Melville, New York, 2023), pp. 5-1–5-24. Gallium oxide is attractive for high-power electronics due to its wide band gap and its ability to be n-type doped. Point defects play decisive roles in the physical properties of the material. By combining first-principles calculations...
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
0
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
.... , Kresse , G. , Janotti , A. , “ First-principles calculations for point defects in solids ,” Rev. Mod. Phys. 86 , 253 ( 2014 ). 10.1103/RevModPhys.86.253 Freysoldt , C. , Neugebauer , J. , and Van de Walle , C. G. , “ Fully ab initio finite-size corrections for charged...
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
0
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
.... , Jiang , H. , Costales , A. , and Pandey , R. , “ Energetics and migration of point defects in Ga2O3 ,” Phys. Rev. B 72 ( 18 ), 184103 ( 2005 ). 10.1103/PhysRevB.72.184103 Blood , P. and Orton , J. W. , The Electrical Characterization...
Book
Series: AIPP Books, Principles
Published: March 2023
10.1063/9780735425613
EISBN: 978-0-7354-2561-3
ISBN: 978-0-7354-2560-6
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
10.1063/9780735425033_012
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
.... FIG. 12.2 (a) Shows the empirically determined relationship between the inverse of the lattice constant and the increasing displacement energy. Reproduced with permission from Corbett, J. W. and Bourgoin, J. C., Point Defects in Solids: Volume 2 Semiconductors and Molecular Crystals...
Book Chapter
Series: AIPP Books, Professional
Published: March 2023
10.1063/9780735425514_009
EISBN: 978-0-7354-2551-4
ISBN: 978-0-7354-2548-4
... in contemporary society to assess the reliability of scientific statements relevant to the decision-making process of subjects with individual and social nature. In this way, the author defends a functional perspective for the teaching of NOS and points out that CV is not enough for this, as it turns...
Book
Series: AIPP Books, Principles
Published: February 2023
10.1063/9780735425033
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
10.1063/9780735425033_010
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
... or at the gate insulator interface to β-Ga2O3. But defect trapping sites inside the β-Ga2O3 material itself have to be considered as well. Double-pulsing into the on-state IV curve from different off-state quiescent gate bias and drain bias points is a known method...
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
10.1063/9780735425033_006
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
..., but no shallow acceptors as in (b) due to fundamental limitations of the electronic structure. Characterization of Donor Dopants from Theory Donors in Ga2O3 from DFT calculations As illustrated in Fig. 6.1 , the introduction of point defects or impurities introduces electronic states...
Book
Series: AIPP Books, Professional
Published: March 2023
10.1063/9780735425514
EISBN: 978-0-7354-2551-4
ISBN: 978-0-7354-2548-4
Book Chapter
Series: AIPP Books, Principles
Published: March 2023
10.1063/9780735424395_005
EISBN: 978-0-7354-2439-5
ISBN: 978-0-7354-2436-4
... either intrinsic source like material phase change, grain growth, crystal misfit, crystal defects (point defects, dislocations), doping, or from extrinsic sources such as plastic deformation, thermal expansion, thermal mismatch, or epitaxial layer mismatch. In multilayer films, residual stress can deform...
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
10.1063/9780735425033_001
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
... semiconductors, a low concentration of compensating defects is even more difficult to achieve due to their large bandgap. Hence, dopants in UWBG semiconductors prominently undergo compensation via extrinsic or intrinsic point defects and complexes. The lowest reported compensating background acceptor in AlN...
Book
Series: AIPP Books, Principles
Published: March 2023
10.1063/9780735424395
EISBN: 978-0-7354-2439-5
ISBN: 978-0-7354-2436-4
Book Chapter
Series: AIPP Books, Principles
Published: March 2023
10.1063/9780735424395_007
EISBN: 978-0-7354-2439-5
ISBN: 978-0-7354-2436-4
... component will be a Mach–Zehnder interferometer or a directional coupler. Non-resonant coupler (i.e., evanescent field coupler) and three popular semiconductor resonant cavities ( Yamamoto and Slusher, 1993 ), i.e., gratings ( Veerasubramanian et al., 2012 ), photonic crystal defects ( Ellis et...
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
10.1063/9780735425033_011
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
..., the Ec–0.7 eV is unaffected by the buffer thickness, which is attributed to a native point defect in the epilayer. FIG. 11.6 Combined Arrhenius plot including bulk samples for accurately comparing reported trap levels. The EC–0.7 eV level measured here and the previously reported E2...
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
10.1063/9780735425033_003
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
... Ga2O3 thin films and points out challenges that require future optimization to grow epitaxial layers suitable for various power device architectures. Introduction β-Ga2O3 is a promising ultra-wide bandgap semiconductor for high voltage power devices due to its unique material...
Book Chapter
Series: AIPP Books, Methods
Published: December 2022
10.1063/9780735425422_002
EISBN: 978-0-7354-2542-2
ISBN: 978-0-7354-2540-8
..., resulting in a defect-bound exciton emission. This emission peak was found to be located ∼0.1 eV below the bandgap ( Chow et al., 2015 ). Remarkably, the electronic effect of anion vacancy point defects leads to charged to neutral exciton population transition in TMDCs, resulting in enhanced...
Book Chapter
Series: AIPP Books, Methods
Published: December 2022
10.1063/9780735425422_001
EISBN: 978-0-7354-2542-2
ISBN: 978-0-7354-2540-8
... wherever we wanted? ( Zhao and Ryu, 2022 ). This talk inspired scientists like Frindt to isolate thin sheets of MoS2 using the micromechanical peeling process and later chemical routes such as lithium intercalation to synthesize a single layer of MoS2 ( Joensen et al., 1986...
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