FIG. 6.7 (a) IoT-based remote monitoring system, (b) posted data on the Blynk platform (voltage, current, power, air temperature, solar irradiance, and cell temperature), and (c) the monitored PV array installed at the rooftop of the University of Jijel (Algeria). More about this image found in (a) IoT-based remote monitoring system, (b) posted data on the Blynk platfo...

FIG. 12.4 (a) Ga and (b) O vacancy distributions calculated by TRIM simulations for a 10 µm thick β-Ga₂O₃ layer irradiated by protons with energies ranging from 0.01 to 100 MeV showing uniform defect generation for higher irradiation energies. More about this image found in (a) Ga and (b) O vacancy distributions calculated by TRIM simulations for a...

FIG. 12.7 (a) C–V extracted doping profiles for pre and post-irradiation on the same Ni/β-Ga₂O₃ Schottky diode revealing a monotonic increase in carrier compensation as a function of proton fluence. (b) DLTS spectra obtained after each proton fluence, noting the pre-irradiation DLTS scan with the E_C-0.4 eV trap (black arrow) and irradiation-induced traps E_C-0.35 eV, E_C-0.6 eV, and E_C-0.7 eV (red arrows); (c) SSPC spectra at each proton fluence point, where step heights are proportional to the concentration of each trap, and the energy levels associated with each SSPC onset are obtained from fitting the (d) optical cross section obtained from fitting the DLOS photocapacitance transient analysis to the Pässler model ( Pässler, 2004 ; and Ghadi et al., 2020b ). Each of the DLOS traps were present prior to radiation, with the E_C–2.0 eV dominating the carrier compensation, also verified using lighted C-V measurements. (d) Reproduced with permission from Ghadi et al., APL Mater. 8 (2), 021111 (2020). Copyright 2020 Author(s), licensed under a Creative Commons Attribution (CC BY) license. More about this image found in (a) C–V extracted doping profiles for pre...

FIG. 12.6 DLTS measurements were made on EFG-grown material before and after proton irradiation to a fluence of 6 × 10¹⁴ cm⁻². The stable configuration DLTS spectrum refers to the DLTS measurement taken after multiple DLTS measurement cycles, resulting in a stable spectrum ( Ingebrigtsen et al., 2019 ). The dominant E2 level has been separately attributed to Fe and does not change with proton irradiation ( Irmscher et al., 2011 ; Zhang et al., 2016b ; Ingebrigtsen et al., 2018 ; McGlone et al., 2018 , 2019 ; and Zimmermann et al., 2020b ). Reproduced with permission from Ingebrigtsen et al., APL Mater. 7 (2), 022510 (2018). Copyright 2018 Author(s), licensed under a Creative Commons Attribution (CC BY) license. More about this image found in DLTS measurements were made on EFG-grown material before and after proton i...

FIG. 12.10 Schematic summaries of trap concentration distributions for β-Ga₂O₃ grown by (a) EFG ( Farzana et al., 2019a ) and (b) PAMBE ( Farzana et al., 2019b ); blue lines indicate trap concentrations before radiation, and red lines indicate the increase in the concentration of each trap after irradiation by 1 MeV equivalent neutrons with a fluence of 1.7 × 10¹⁵ cm⁻². Reproduced with permission from Farzana et al., APL Mater. 7 (2), 022502 (2019). Copyright 2019 Author(s), licensed under a Creative Commons Attribution (CC BY) license and Farzana et al., APL Mater. 7 (12), 121102 (2019). Copyright 2019 Author(s), licensed under a Creative Commons Attribution (CC BY) license. More about this image found in Schematic summaries of trap concentration distributions for β-Ga₂...

FIG. 12.11 Net charge concentration extracted while annealing the sample at 510 K, with C–V profiles measured at a regular interval. The sample was initially an EFG substrate irradiated with 1.9 MeV protons with a fluence of 6 × 10¹⁴ cm⁻². To calculate the carrier recovery activation energy, the carrier concentrations were plotted as a function of time for 3 depletion depths (200, 300, and 400 nm) and fitted to second-order kinetics. The measured energy was ∼1.2 eV, which is likely the defect migration barrier responsible for the carrier recovery ( Ingebrigtsen et al., 2019 ). Reproduced with permission from Ingebrigtsen et al., APL Mater. 7 (2), 022510 (2018). Copyright 2018 Author(s), licensed under a Creative Commons Attribution (CC BY) license. More about this image found in Net charge concentration extracted while annealing the sample at 510 K, wit...