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iron on Ga site (FeGa)
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1-7 of 7 Search Results for
iron on Ga site (FeGa)
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
10.1063/9780735425033_006
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
... for the commercial production of semi-insulating substrates. Formation energy diagrams for several Fe-related configurations are included in Fig. 6.9 , showing that substitutional FeGa is highly soluble for a variety of synthesis and processing conditions that spans the range between the Ga-rich and O...
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
10.1063/9780735425033_012
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
..., the E2 level has been identified and linked to an iron substitutional defect (FeGa) in multiple studies by several groups using SIMS correlations for direct comparison with Fe concentration and using DFT calculations ( Irmscher et al., 2011 ; Zhang et al., 2016b...
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
10.1063/9780735425033_001
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
... choices. The impurity Fe forms an acceptor level in Ga sites (FeGa) 0.8 eV below the CBM (EC-0.8 eV). However, the EC-0.8 eV level is still far from the valence band in the UWBG β-Ga2O3 ( Ingebrigtsen et al., 2018 ). The other acceptor, Mg...
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
10.1063/9780735425033_011
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
... ). Theoretical calculations attribute this energy level to a FeGa substitutional defect when Fe occupies a tetrahedral or octahedral site. Fabricating devices with thick buffer layers is expected to mitigate the formation of Ec–0.8 eV trap energy level. However...
Book Chapter
Series: AIPP Books, Methods
Published: December 2020
10.1063/9780735422698_003
EISBN: 978-0-7354-2269-8
ISBN: 978-0-7354-2270-4
... likely attributed to 0/- charged state of iron on Ga site (FeGa), 0/− and +/0 charged states of carbon on nitrogen site (CN), respectively. Among deep levels induced by irradiation, EE1 and EE2 at around EC − 0.12 eV and EC − 1 eV correspond...
Book
Series: AIPP Books, Methods
Published: December 2020
10.1063/9780735422698
EISBN: 978-0-7354-2269-8
ISBN: 978-0-7354-2270-4
Book Chapter
Series: AIPP Books, Methods
Published: December 2020
10.1063/9780735422698_008
EISBN: 978-0-7354-2269-8
ISBN: 978-0-7354-2270-4
... site (CN) 0/− and iron on Ga site (FeGa) 0/− states can compensate for electrons in n-type GaN drift layers grown using MOVPE. The incorporation of iron in such layers can possibly be suppressed by reducing potential iron sources in the reactor. However...