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1-20 of 92 Search Results for
interstitials
Images
in Defects in β-Ga2O3: Theory and Microscopic Studies
> Ultrawide Bandgap β-Ga2O3 SemiconductorTheory and Applications
Published: February 2023
FIG. 5.2 Formation energy diagram of O interstitials and O vacancies, shown for (a) Ga-rich and (b) O-rich conditions. Adapted with permission from Ingebrigtsen et al., APL Mater. 7 (2), 022510 (2019). Copyright 2019 AIP Publishing LLC. More about this image found in Formation energy diagram of O interstitials and O vacancies, shown for (a) ...
Images
in Defects in β-Ga2O3: Theory and Microscopic Studies
> Ultrawide Bandgap β-Ga2O3 SemiconductorTheory and Applications
Published: February 2023
FIG. 5.3 Atomic geometries of oxygen interstitials for (a) the split interstitial Osi in the neutral charge state and (b) the oxygen interstitial Oi in the −2 charge state ( Ingebrigtsen et al., 2019 ). Adapted with permission from Ingebrigtsen et al., APL Mater. 7 (2), 022510 (2019). Copyright 2019 AIP Publishing LLC. More about this image found in Atomic geometries of oxygen interstitials for (a) the split interstitial O...
Images
in Defects in β-Ga2O3: Theory and Microscopic Studies
> Ultrawide Bandgap β-Ga2O3 SemiconductorTheory and Applications
Published: February 2023
FIG. 5.4 Formation energy diagrams of Ga interstitials, Ga antisites, and gallium vacancies for (a) Ga-rich and (b) O-rich conditions. Adapted with permission from Ingebrigtsen et al., APL Mater. 7 (2), 022510 (2019). Copyright 2019 AIP Publishing LLC. More about this image found in Formation energy diagrams of Ga interstitials, Ga antisites, and gallium va...
Images
in Defects in β-Ga2O3: Theory and Microscopic Studies
> Ultrawide Bandgap β-Ga2O3 SemiconductorTheory and Applications
Published: February 2023
FIG. 5.12 Simulated atomic column intensities, both at the interstitial and cation columns, in HAADF images assuming the cations being (a) Ga atoms and (b) Sn atoms. Reproduced with permission from Johnson et al., Phys. Rev. X 9 , 041027 (2019). Copyright 2019 APS Publishing. More about this image found in Simulated atomic column intensities, both at the interstitial and cation co...
Images
in Defects in β-Ga2O3: Theory and Microscopic Studies
> Ultrawide Bandgap β-Ga2O3 SemiconductorTheory and Applications
Published: February 2023
FIG. 5.10 (a) STEM HAADF image showing distribution and segregation of cation interstitial atoms within the bulk β-Ga2O3. X marks indicate (blue) ib type and (red) ic type interstitials. (b)–(e) Close-up images of ib, ic, id, and ie type interstitials. (f) Line profile across the ic type interstitial, indicating the extra peak due to the interstitial (red triangle). Reproduced with permission from Johnson et al., Phys. Rev. X 9 , 041027 (2019). Copyright 2019 APS Publishing. More about this image found in (a) STEM HAADF image showing distribution and segregation of cation interst...
Images
in Defects in β-Ga2O3: Theory and Microscopic Studies
> Ultrawide Bandgap β-Ga2O3 SemiconductorTheory and Applications
Published: February 2023
FIG. 5.1 Illustration of the β-Ga2O3 structure with the interstitial sites involved in split-vacancy formation indicated by black crosses. More about this image found in Illustration of the β-Ga2O3 structure with the inters...
Images
in Defects in β-Ga2O3: Theory and Microscopic Studies
> Ultrawide Bandgap β-Ga2O3 SemiconductorTheory and Applications
Published: February 2023
FIG. 5.5 Three configurations of split vacancies: V Ga i b , V Ga i c , and V Ga i a . The interstitial sites (ia, ib, and ic) involved in split-vacancy formation are indicated in Fig. 5.1 . The vacant Ga sites adjacent to the displaced interstitial Ga are highlighted with dashed circles; O species left with dangling bonds are indicated for each vacancy configuration. Adapted with permission from Ingebrigtsen et al., APL Mater. 7 (2), 022510 (2019). Copyright 2019 AIP Publishing LLC. More about this image found in Three configurations of split vacancies: V Ga i b , V ...
Images
in Defects in β-Ga2O3: Theory and Microscopic Studies
> Ultrawide Bandgap β-Ga2O3 SemiconductorTheory and Applications
Published: February 2023
FIG. 5.9 (a) 010 and (b) 001 orientation views of monoclinic β-Ga2O3 crystal, with the positions of the possible interstitial positions, ia to ie. Reproduced with permission from Johnson et al., Phys. Rev. X 9 , 041027 (2019). Copyright 2019 APS Publishing. More about this image found in (a) 010 and (b) 001 orientation views of monoclinic β-Ga2O3...
Images
in Defects in β-Ga2O3: Theory and Microscopic Studies
> Ultrawide Bandgap β-Ga2O3 SemiconductorTheory and Applications
Published: February 2023
FIG. 5.6 Migration mechanism of the tetrahedral vacancy β-Ga2O3. The vacancy on the tetrahedral site is metastable: a more favorable configuration is formed by moving a neighboring substitutional GaI atom to an interstitial site with octahedral coordination ( V Ga i b ). Reproduced with permission from Varley et al., J. Phys. Condens. Matter 23 (33), 334212 (2011). Copyright 2011 IOP Publishing. More about this image found in Migration mechanism of the tetrahedral vacancy β-Ga2O3...
Images
in Defects in β-Ga2O3: Theory and Microscopic Studies
> Ultrawide Bandgap β-Ga2O3 SemiconductorTheory and Applications
Published: February 2023
FIG. 5.11 HAADF image of an area (a) without and (b) with ic defects. Line profiles across the green and red dashed lines in (a) and (b), respectively, are shown in the upper graph in (c), which is compared to the simulated intensity shown in the lower graph. (d) Schematic of the formation of the interstitial-divacancy complex predicted by DFT calculation. Reproduced with permission from Johnson et al., Phys. Rev. X 9 , 041027 (2019). Copyright 2019 APS Publishing. More about this image found in HAADF image of an area (a) without and (b) with ic...
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
10.1063/9780735425033_005
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
... with scanning transmission electron microscopy (STEM), we elucidate the properties of point defects in gallium oxide. We discuss the electronic behavior of O interstitials, O vacancies, Ga interstitials, Ga vacancies, and hydrogenated Ga vacancies. Gallium vacancies, in particular, have low formation energies...
Book Chapter
Series: AIPP Books, Principles
Published: March 2023
10.1063/9780735425590_005
EISBN: 978-0-7354-2559-0
ISBN: 978-0-7354-2556-9
... atomic arrangement,” ( Hower and Gupta, 1979 ) and “zinc vacancy and/or oxygen interstitial related defects” ( Gupta and Carlson, 1985 and Carlsson et al., 2003 ). However, the origin remained controversial; to obtain a decisive conclusion, an intensive study on a ZnO [0001] Σ7 GB...
Book
Series: AIPP Books, Principles
Published: February 2023
10.1063/9780735425033
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
10.1063/9780735425033_006
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
... crystallographically distinct Ga sites, tetrahedral GaI and octahedral GaII, as well as the three distinct O sites, or occupy a number of possible interstitial sites. The O sites exhibit a three-fold coordination for the OI and OII, and tetrahedral coordination...
Book
Series: AIPP Books, Principles
Published: March 2023
10.1063/9780735425590
EISBN: 978-0-7354-2559-0
ISBN: 978-0-7354-2556-9
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
10.1063/9780735425033_012
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
... to displacement energy, where higher displacement energies result in fewer Frenkel pairs. In β-Ga2O3, the sources of these Frenkel pairs are the displaced Ga or O atoms from the lattice, thus forming Ga and O vacancies and interstitials. This damage to the lattice can result...
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
0
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
... Bouzid , A. and Pasquarello , A. , “ Defect formation energies of interstitial C, Si, and Ge impurities in β-Ga2O3 ,” Phys. Status Solidi RRL 13 ( 8 ), 1800633 ( 2019 ). 10.1002/pssr.201800633 Cui , H. , Mohamed , H. F. , Xia , C. , Sai , Q...
Images
in Non-Ambient Experiments for Energy Storage Materials
> Inside Energy Storage MaterialsDiffraction and Spectroscopic Methods for Battery Research
Published: November 2022
FIG. 7.4 Portion of the Li2NiGe3O8 crystal structure, showing how lithium migrates from its ideal 8c (red) lattice site to the newly identified 12d octahedrally coordinated interstitial site in yellow. Reproduced with permission from Reeves-McLaren et al., Chem. Mater. 23 (15), 3556–3563 (2011). Copyright 2011 American Chemical Society. More about this image found in Portion of the Li2NiGe3O8 crystal structur...
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
10.1063/9780735425033_003
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
... al., 2017 ), and 120 meV ( Feng et al., 2019 ) have been reported for various samples. The origin of these donors has not yet been conclusively identified, but possible sources, including antisites, interstitials, and extrinsic impurities such as Si occupying the octahedrally...
Book Chapter
Series: AIPP Books, Principles
Published: November 2022
10.1063/9780735424470_001
EISBN: 978-0-7354-2447-0
ISBN: 978-0-7354-2444-9
... transmitted wirelessly at regular intervals. Such sensors measure interstitial glucose levels, which is the glucose found in the fluid between the cells. This is largely done using enzymatic glucose sensors that react with glucose molecules in the interstitial fluid to generate an electric current...
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