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1-20 of 809
Search Results for interface
Book Chapter
Series: AIPP Books, Principles
Published: November 2022
10.1063/9780735424470_002
EISBN: 978-0-7354-2447-0
ISBN: 978-0-7354-2444-9
... with their target tissue for prolonged periods of time. Over this time, tissues and devices continue to interact at their interface. While this interaction can be minimally harmful, an improperly designed device can trigger a severe reaction in the tissue and potentially permanently destroy the target of its...
Book Chapter
Bioelectronics for Plant Interface
Available to PurchaseSeries: AIPP Books, Principles
Published: November 2022
10.1063/9780735424470_012
EISBN: 978-0-7354-2447-0
ISBN: 978-0-7354-2444-9
.... Bioelectronics can not only bring solutions for several of the current healthcare challenges, but also open new possibilities, for example, a brain–machine interface. Bioelectronics has neither been focused nor been applied to the same extent to plant systems. Many reasons may have contributed to this; plant...
Images
HRTEM image of PZT/SRO interface ( Jia et al., 2007 ) show...
Available to Purchase
in Microscopic-Strain-Related Phenomena in Functional Oxides
> Strain Engineering in Functional Materials and Devices
Published: March 2023
FIG. 5.2 HRTEM image of PZT/SRO interface ( Jia et al., 2007 ) showing the measured lattice parameters in the film and substrate. The thick arrow denotes the interface. dIL and dIS are the shift parameters as defined in Fig. 5.3(c) . Reproduced More about this image found in HRTEM image of PZT/SRO interface ( Jia et al., 2007 ) show...
Images
(a) Dependence of nanostrain on the incoherent interface of nanoparticles a...
Available to Purchase
in Microscopic-Strain-Related Phenomena in Functional Oxides
> Strain Engineering in Functional Materials and Devices
Published: March 2023
FIG. 5.13 (a) Dependence of nanostrain on the incoherent interface of nanoparticles and (b) dependence of normalized maximum isotropic pinning force on nanostrain of the YBCO–BMO sample ( Coll et al., 2014 ). Reproduced with permission from Coll et al., Supercond. Sci More about this image found in (a) Dependence of nanostrain on the incoherent interface of nanoparticles a...
Images
Solid–liquid interface model of zone melted Tb0.3Dy0.7...
Available to Purchase
in Rare Earth Transition Metal Based Giant Magnetostrictive Materials: An Interdisciplinary Perspective
> Strain Engineering in Functional Materials and Devices
Published: March 2023
FIG. 9.13 Solid–liquid interface model of zone melted Tb0.3Dy0.7Fe1.95 and corresponding micrographs of transverse section ( Palit et al., 2011 ). More about this image found in Solid–liquid interface model of zone melted Tb0.3Dy0.7...
Images
(a) Low magnification TEM images on BT-CFO, (b) high magnification image of...
Available to Purchase
in Strain Engineering in 2-2 Multilayered Magneto-Electric (ME) Nanocomposites
> Strain Engineering in Functional Materials and Devices
Published: March 2023
FIG. 10.3 (a) Low magnification TEM images on BT-CFO, (b) high magnification image of CFO/BCZT interface, (d) BCZT/CFO interface, and (c) and (d) magnified image of (b) and (e), respectively, showing lattice fringes across the interface. More about this image found in (a) Low magnification TEM images on BT-CFO, (b) high magnification image of...
Images
Schematic of typical Ga-faced HEMT device structure. A nucleation layer is ...
Available to Purchase
in Impact of Strain on the Electronic and Optoelectronic Properties of III-Nitride Semiconductor Heterostructures
> Strain Engineering in Functional Materials and Devices
Published: March 2023
FIG. 3.18 Schematic of typical Ga-faced HEMT device structure. A nucleation layer is grown on the substrate for accommodating lattice mismatch. 2DEG is formed at the interface of the AlGaN/GaN interface on the GaN side. Thin GaN is formed at the top to make better contact. More about this image found in Schematic of typical Ga-faced HEMT device structure. A nucleation layer is ...
Images
Experimental setup for pendulum study: (a) electromechanical pendulum, (b) ...
Available to Purchase
in Using Sensors and Digital Data Collection/Analysis Technologies in K–12 Physics Education Under the STEM Perspective
> The International Handbook of Physics Education Research: Teaching Physics
Published: March 2023
FIG. 6.19 Experimental setup for pendulum study: (a) electromechanical pendulum, (b) USB 6008 NI unit, (c) LabVIEW interface. More about this image found in Experimental setup for pendulum study: (a) electromechanical pendulum, (b) ...
Images
SIMS depth profiles showing Si accumulation at the film/substrate interface...
Available to PurchasePublished: February 2023
FIG. 3.3 SIMS depth profiles showing Si accumulation at the film/substrate interface for MOCVD grown films. After BHF etch, the Si peak at the interface decreases by up to one order of magnitude. More about this image found in SIMS depth profiles showing Si accumulation at the film/substrate interface...
Images
Remix IDE compiler interface ( https://remix-project.org/ ).
Available to PurchasePublished: February 2023
FIG. 6.8 Remix IDE compiler interface ( https://remix-project.org/ ). More about this image found in Remix IDE compiler interface ( https://remix-project.org/ ).
Images
Remix IDE deployer interface ( https://remix-project.org/ ).
Available to PurchasePublished: February 2023
FIG. 6.9 Remix IDE deployer interface ( https://remix-project.org/ ). More about this image found in Remix IDE deployer interface ( https://remix-project.org/ ).
Images
Ganache interface ( https://trufflesuite.com/ganache/ ).
Available to PurchasePublished: February 2023
FIG. 6.10 Ganache interface ( https://trufflesuite.com/ganache/ ). More about this image found in Ganache interface ( https://trufflesuite.com/ganache/ ).
Images
Schematic of (symmetric and anti-symmetric, sinusoidal) perturbations at th...
Available to Purchase
in Elastic Stress Driven Instabilities in Thin Films and their Assemblies
> Strain Engineering in Functional Materials and Devices
Published: March 2023
FIG. 8.4 Schematic of (symmetric and anti-symmetric, sinusoidal) perturbations at the film-matrix interfaces. More about this image found in Schematic of (symmetric and anti-symmetric, sinusoidal) perturbations at th...
Images
Schematic of perturbation at the free surface (denoted by γ...
Available to Purchase
in Elastic Stress Driven Instabilities in Thin Films and their Assemblies
> Strain Engineering in Functional Materials and Devices
Published: March 2023
FIG. 8.3 Schematic of perturbation at the free surface (denoted by γ). The regions where interface displacements are prescribed is denoted by Γ. More about this image found in Schematic of perturbation at the free surface (denoted by γ...
Images
Illustration for spontaneous and piezoelectric polarization-induced sheet c...
Available to Purchase
in Impact of Strain on the Electronic and Optoelectronic Properties of III-Nitride Semiconductor Heterostructures
> Strain Engineering in Functional Materials and Devices
Published: March 2023
FIG. 3.19 Illustration for spontaneous and piezoelectric polarization-induced sheet charge at the AlGaN/GaN interface for Ga-faced and N-faced growth direction. More about this image found in Illustration for spontaneous and piezoelectric polarization-induced sheet c...
Images
Band diagrams of the AlGaN/GaN heterostructure for HEMT. Strained AlGaN is ...
Available to Purchase
in Impact of Strain on the Electronic and Optoelectronic Properties of III-Nitride Semiconductor Heterostructures
> Strain Engineering in Functional Materials and Devices
Published: March 2023
FIG. 3.20 Band diagrams of the AlGaN/GaN heterostructure for HEMT. Strained AlGaN is grown pseudomorphically on relaxed GaN. A positive polarization charge ( + σ ) is induced at the interface, which attracts electrons and forms 2DEG. More about this image found in Band diagrams of the AlGaN/GaN heterostructure for HEMT. Strained AlGaN is ...
Images
Band diagrams of (a) valence band and (b) conduction band in the GaN/InGaN ...
Available to Purchase
in Impact of Strain on the Electronic and Optoelectronic Properties of III-Nitride Semiconductor Heterostructures
> Strain Engineering in Functional Materials and Devices
Published: March 2023
, respectively. (c) Induced sheet charge at the interfaces of QW due to polarization. More about this image found in Band diagrams of (a) valence band and (b) conduction band in the GaN/InGaN ...
Images
(a) Lattice parameters, a and c, and (b) ...
Available to Purchase
in Microscopic-Strain-Related Phenomena in Functional Oxides
> Strain Engineering in Functional Materials and Devices
Published: March 2023
FIG. 5.3 (a) Lattice parameters, a and c, and (b) sublattice spacing, dIL and dIS, of PZT and SRO measured from HRTEM image ( Jia et al., 2007 ). The dotted lines indicate the location of the PZT/SRO interface. The open and filled More about this image found in (a) Lattice parameters, a and c, and (b) ...
Images
Nanostrain analysis for nanocomposite YBCO films ( Llordés et al....
Available to Purchase
in Microscopic-Strain-Related Phenomena in Functional Oxides
> Strain Engineering in Functional Materials and Devices
Published: March 2023
FIG. 5.11 Nanostrain analysis for nanocomposite YBCO films ( Llordés et al., 2012 ). (a) Williamson–Hall plots of the symmetric YBCO Bragg reflection, (b) dependence of the YBCO vertical nanostrain (determined from Williamson–Hall plots) on the incoherent specific interface of nanodots More about this image found in Nanostrain analysis for nanocomposite YBCO films ( Llordés et al....
Book Chapter
Strain Engineering in 2-2 Multilayered Magneto-Electric (ME) Nanocomposites
Available to PurchaseSeries: AIPP Books, Principles
Published: March 2023
10.1063/9780735425590_010
EISBN: 978-0-7354-2559-0
ISBN: 978-0-7354-2556-9
... the interface to be sharp and perfect, which is an ideal case. Bichurin et al. [R] constructed an interesting model by taking the interface quality into account and revised Eqns. ( 10.4 ) and ( 10.5 ) by introducing the coupling factor “k.” The coupling factor (k) represents the bonding strength...
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