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hydride vapor phase epitaxy (HVPE)
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1-12 of 12 Search Results for
hydride vapor phase epitaxy (HVPE)
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
10.1063/9780735425033_003
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
... ), and halide vapor phase epitaxy (HVPE) ( Goto et al., 2018 ) methods. Despite coming late to the field, the MOCVD method has proven to be suitable for producing high-quality epitaxial films at a fast growth rate with uniform and controllable doping ( Wagner et al., 2014 ; Alema et al...
Book Chapter
Series: AIPP Books, Principles
Published: March 2023
10.1063/9780735425590_003
EISBN: 978-0-7354-2559-0
ISBN: 978-0-7354-2556-9
... as the substrate for optical and electrical devices using hydride vapor phase epitaxy (HVPE) or metalorganic vapor phase epitaxy (MOVPE) has been a common practice. However, one of the limiting factors of such growth is the bowing of the wafers, which is introduced through intrinsic stress during growth...
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
10.1063/9780735425033_006
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
... conditions and have binding energies exceeding 3 eV ( Yang et al., 2018 ; and Alfieri et al., 2021 ). The formation of these types of self-compensating complexes may additionally explain why Cl-related doping efforts such as during growth via hydride vapor phase epitaxy (HVPE) do not yield...
Book
Series: AIPP Books, Principles
Published: March 2023
10.1063/9780735425590
EISBN: 978-0-7354-2559-0
ISBN: 978-0-7354-2556-9
Book Chapter
Series: AIPP Books, Methods
Published: December 2020
10.1063/9780735422698_003
EISBN: 978-0-7354-2269-8
ISBN: 978-0-7354-2270-4
... section filling time dislocation-related defect isolated point defect metalorganic vapor phase epitaxy (MOVPE) hydride vapor phase epitaxy (HVPE) electron irradiation proton irradiation first-principles calculation Heyd-Scuseria-Ernzerhof (HSE) activation energy zero-phonon line (ZPL) carbon...
Book Chapter
Series: AIPP Books, Methods
Published: December 2020
10.1063/9780735422698_008
EISBN: 978-0-7354-2269-8
ISBN: 978-0-7354-2270-4
... etching is challenging because such defects is located near the surface. Methods to characterize etching-induced deep levels are introduced. trench-gate metal-oxide-semiconductor field-effect transistor (MOSFET) threading dislocation hydride vapor phase epitaxy (HVPE) metalorganic vapor phase epitaxy...
Book Chapter
Series: AIPP Books, Methods
Published: December 2020
10.1063/9780735422698_001
EISBN: 978-0-7354-2269-8
ISBN: 978-0-7354-2270-4
... below 10−6 cm−2 grown by hydride vapor phase epitaxy (HVPE) and obtained values of 3.18926 ± 0.0004 and 5.18523 ± 0.0002 Å for the a- and c-axes at room temperature (RT). 51 , 52 These values are almost equal to the means...
Book Chapter
Series: AIPP Books, Methods
Published: December 2020
10.1063/9780735422698_007
EISBN: 978-0-7354-2269-8
ISBN: 978-0-7354-2270-4
... 380–400 nm. 36 MPPL measurements were performed on an unintentionally doped n-type c-plane GaN substrate prepared by hydride vapor phase epitaxy (HVPE). A femtosecond laser with an emission wavelength of 1030 nm was used as the excitation source. The pulse width was ∼100...
Book Chapter
Series: AIPP Books, Methods
Published: December 2020
0
EISBN: 978-0-7354-2269-8
ISBN: 978-0-7354-2270-4
... diode ,” Jpn. J. Appl. Phys. 45 ( Part 1, 12 ), 9001 – 9010 ( 2006 ). 10.1143/JJAP.45.9001 10 A. Usui , H. Sunakawa , A. Sakai , and A. A. Yamaguchi , “ Thick GaN epitaxial growth with low dislocation density by hydride vapor phase epitaxy ,” Jpn. J. Appl...
Book Chapter
Series: AIPP Books, Methods
Published: December 2020
10.1063/9780735422698_006
EISBN: 978-0-7354-2269-8
ISBN: 978-0-7354-2270-4
... of 4-in. GaN (0001) wafer The sample investigated was a 4-in. freestanding GaN substrate grown by a conventional hydride vapor phase epitaxy (HVPE) method. As the q z components are relatively large, we plotted the summation of the q x and q y components [Fig. 6.5...
Book Chapter
Series: AIPP Books, Methods
Published: December 2020
0
EISBN: 978-0-7354-2269-8
ISBN: 978-0-7354-2270-4
... A. Usui , H. Sunakawa , A. Sakai , and A. A. Yamaguchi , “ Thick GaN epitaxial growth with low dislocation density by hydride vapor phase epitaxy ,” Jpn. J. Appl. Phys. 36 ( Part 2, 7B ), L899 – L902 ( 1997 ). 10.1143/JJAP.36.L899 4 D. Jena and U. K...
Book
Series: AIPP Books, Methods
Published: December 2020
10.1063/9780735422698
EISBN: 978-0-7354-2269-8
ISBN: 978-0-7354-2270-4