FIG. 9.15 Static strain co-efficient as function of growth rate and growth orientation. More about this image found in Static strain co-efficient as function of growth rate and growth orientatio...

FIG. 12.3 Growth and propagation of proppant bank during hydraulic fracturing. More about this image found in Growth and propagation of proppant bank during hydraulic fracturing.

FIG. 9.12 Average cell spacing as a function of growth rate in zone melted Tb_0.3Dy_0.7Fe_1.95 ( Palit et al., 2011 ). More about this image found in Average cell spacing as a function of growth rate in zone melted Tb_0.3...

FIG. 3.1 Several processes governing the thin-film growth are depicted schematically. More about this image found in Several processes governing the thin-film growth are depicted schematically...

FIG. 3.2 Nucleation and growth of a stable nucleus which eventually evolves as a continuous layer after having merged with other surviving nuclei. Nuclei (blue) having radii smaller than that of the critical nucleus disintegrate over time and therefore do not survive. More about this image found in Nucleation and growth of a stable nucleus which eventually evolves as a con...

FIG. 7.6 Schematic of the growth configuration and the corresponding x-ray diffraction pattern of the BFO layers with constant thickness and LSMO with varying thicknesses [tetragonal (a), mixed (b), and rhombohedral (c)]. More about this image found in Schematic of the growth configuration and the corresponding x-ray diffracti...

FIG. 3.7 ALD-based thin layer growth process. Reprinted with permission Kim et al., Thin Solid Films 517 , 2563–2580 (2009). Copyright 2009 Elsevier. More about this image found in ALD-based thin layer growth process. Reprinted with permission Kim

FIG. 3.13 (a) Substrate and film with lattice parameters a s and a 0 , respectively, where a s < a 0 . (b) Pseudomorphic growth with compressive strain. (c) Misfit dislocation of thin-film growth beyond critical thickness. More about this image found in (a) Substrate and film with lattice parameters a s and a 0...

FIG. 9.11 Microstructure of zone melted Tb_0.3Dy_0.7Fe_1.95 solidified at different growth rates. More about this image found in Microstructure of zone melted Tb_0.3Dy_0.7Fe_1.95...

FIG. 4.2 Growth rate dependence on Ga flux for various growth orientations. Reproduced with permission from Oshima et al., Semicond. Sci. Technol. 33 (1), 015013 (2017). Copyright 2017 IOP Publishing. More about this image found in Growth rate dependence on Ga flux for various growth orientations. Repro...

FIG. 4.3 Maximum growth rates vs growth temperature across different orientations for conventional PAMBE vs MOCATAXY (indium catalyzed growth). Reproduced with permission from Mauze et al., APL Mater. 8 (2), 021104 (2020b). Copyright 2020b AIP Publishing LLC. More about this image found in Maximum growth rates vs growth temperature across different orientations fo...

FIG. 3.19 Illustration for spontaneous and piezoelectric polarization-induced sheet charge at the AlGaN/GaN interface for Ga-faced and N-faced growth direction. More about this image found in Illustration for spontaneous and piezoelectric polarization-induced sheet c...

FIG. 8.6 Microstructural evolution in a thin film system with isotropic elasticity, the far-field composition is 0.05 leading to growth along with film break-up. From the top left, the microstructures correspond to (non-dimensional) time units: t = 114 600, t = 122 800, t = 133 800 and t = 205 800, respectively. These times indicate that the growth slows down the break-up dynamics compared to the previous case of (near) static break-up. More about this image found in Microstructural evolution in a thin film system with isotropic elasticity, ...

FIG. 8.8 Microstructural evolution in a thin film system with isotropic elasticity and two films in the simulation cell, the far-field composition is 0.05 leading to growth along with film break-up. From top left, the microstructures correspond to (non-dimensional) time units: t = 110 800, t = 122 800, t = 143 400, and t = 270 800, respectively. These times indicate that the growth slows down the break-up dynamics compared to the previous case of (near) static break-up. More about this image found in Microstructural evolution in a thin film system with isotropic elasticity a...

FIG. 1.10 β-Ga₂O₃ epitaxy growth (a) HVPE ( Ahmadi and Oshima, 2019 ) and (b) MBE growth chamber (UCSB). More about this image found in β-Ga₂O₃ epitaxy growth (a) HVPE ( Ahmadi and Oshima, ...

FIG. 2.1 CZ puller schematic for β-Ga₂O₃ growth ( Higashiwaki and Fujita, 2020 ). More about this image found in CZ puller schematic for β-Ga₂O₃ growth ( Higashiwaki ...

FIG. 2.3 Diagram of oxygen delivery to a growth furnace vs temperature for the growth of large diameter β-Ga₂O₃ single crystals from an iridium crucible. RT—room temperature, TP—transition point, and MP—melting point ( Galazka et al., 2016 ). More about this image found in Diagram of oxygen delivery to a growth furnace vs temperature for the growt...

FIG. 3.8 Growth rate vs TMGa molar flow rate for Ga₂O₃ films grown using Agilis 500 and 700. Reprinted from Seryogin et al., Appl. Phys. Lett. 117 , 262101 (2020). Copyright 2020 AIP Publishing LLC. More about this image found in Growth rate vs TMGa molar flow rate for Ga₂O₃ films g...