FIG. 3.18 Schematic of typical Ga-faced HEMT device structure. A nucleation layer is grown on the substrate for accommodating lattice mismatch. 2DEG is formed at the interface of the AlGaN/GaN interface on the GaN side. Thin GaN is formed at the top to make better contact. More about this image found in Schematic of typical Ga-faced HEMT device structure. A nucleation layer is ...

FIG. 5.4 Schematic drawings showing (a) nonlinear I–V characteristic of ZnO varistor and (b) DSB formed at a GB. More about this image found in Schematic drawings showing (a) nonlinear I–V...

FIG. 9.8 (a) The distribution of three MacEtch-formed β-Ga₂O₃ structures. 45°-tilted and cross-section SEM micrographs of MacEtch-formed β-Ga₂O₃ structures with (b) and (c) pyramid, (d) and (e) trapezoid-like, and (f) and (g) blade structures. (h) Height, top width, pitch and (i) angles between upper and lower sidewall (angel 1) and top plane and upper sidewall (angle 2) of β-Ga₂O₃ vertical structures produced by MacEtch. Reprinted with permission from Huang et al., ACS Nano 13 (8), 8784–8792 ( 2019a ). Copyright 2019 American Chemical Society. More about this image found in (a) The distribution of three MacEtch-formed β-Ga₂O₃ ...

FIG. 9.9 XPS characterization of surface with planar (unetched) and MacEtch-formed structures. (a) XPS survey scan. (b) O/Ga ratio of different β-Ga₂O₃ structures extracted through the O 1s and Ga 3d peak intensity. Reprinted with permission from Huang et al., ACS Nano 13 (8), 8784–8792 ( 2019a ). Copyright 2019 American Chemical Society. More about this image found in XPS characterization of surface with planar (unetched) and MacEtch-formed s...

FIG. 3.20 Band diagrams of the AlGaN/GaN heterostructure for HEMT. Strained AlGaN is grown pseudomorphically on relaxed GaN. A positive polarization charge ( + σ ) is induced at the interface, which attracts electrons and forms 2DEG. More about this image found in Band diagrams of the AlGaN/GaN heterostructure for HEMT. Strained AlGaN is ...

FIG. 2.3 Electronic structures of (a) monoclinic and orthorhombic LaVO₃ in bulk form as well as under strain and (b) different GB structures. Reproduced with permission from Raghunathan et al., Nano Lett. 14 , 4943–4950 (2014). Copyright 2014 American Chemical Society; and Jana et al., Phys. Rev. B 102 , 235108 (2020). Copyright 2020 American Physical Society. More about this image found in Electronic structures of (a) monoclinic and orthorhombic LaVO₃ i...

FIG. 13.1 The Landscape of Physics Education: Decontextualized methods live at high elevations where the learning experience is exhausting and suffocating. The ecosystem is barren, reflecting the sterility of decontextualized physics instruction. When descending along any path, contextualized meth... More about this image found in The Landscape of Physics Education: Decontextualized methods live at high e...