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FIG. 1.10 Schematic of epitaxially grown unit cells representing a film under planar compressive strain. More about this image found in Schematic of epitaxially grown unit cells representing a film under planar ...

FIG. 1.11 Schematic of epitaxially grown unit cells representing a film under planar tensile strain. More about this image found in Schematic of epitaxially grown unit cells representing a film under planar ...

FIG. 3.1 Several processes governing the thin-film growth are depicted schematically. More about this image found in Several processes governing the thin-film growth are depicted schematically...

FIG. 3.13 (a) Substrate and film with lattice parameters a s and a 0 , respectively, where a s < a 0 . (b) Pseudomorphic growth with compressive strain. (c) Misfit dislocation of thin-film growth beyond critical thickness. More about this image found in (a) Substrate and film with lattice parameters a s and a 0...

FIG. 4.6 (a) XRD of thickness-dependent VO₂ epitaxial film on rutile TiO₂ substrate; (b) schematic shows the growth of rutile VO₂ phase on rutile TiO₂; (c) resistance–temperature plot; and (d) corresponding differential resistance plot showing More about this image found in (a) XRD of thickness-dependent VO₂ epitaxial film on rutile TiO...

FIG. 6.1 Schematic of an epitaxially grown thin film on a substrate. More about this image found in Schematic of an epitaxially grown thin film on a substrate.

FIG. 8.2 Schematic of ATG instability: the undulations of the film lead to relaxation of elastic energy on the peaks; in the process, the troughs are more strained as compared to a flat surface. Thus, once established, the perturbations tend to grow. Addition of material, given the chemical More about this image found in Schematic of ATG instability: the undulations of the film lead to relaxatio...

FIG. 8.5 Microstructural evolution in a thin film system with isotropic elasticity and two films in the simulation cell; the far-field composition is 0.01. From top left, the microstructures correspond to (non-dimensional) time units: t = 105 200, t = 109 600, t = 112 More about this image found in Microstructural evolution in a thin film system with isotropic elasticity a...

FIG. 8.6 Microstructural evolution in a thin film system with isotropic elasticity, the far-field composition is 0.05 leading to growth along with film break-up. From the top left, the microstructures correspond to (non-dimensional) time units: t = 114 600, t = 122 800 More about this image found in Microstructural evolution in a thin film system with isotropic elasticity, ...

FIG. 8.7 Microstructural evolution in a thin film system with isotropic elasticity and two films in the simulation cell; the far-field composition is 0.01. From the top left, the microstructures correspond to (non-dimensional) time units: t = 78 800, t = 84 800, t = 100 More about this image found in Microstructural evolution in a thin film system with isotropic elasticity a...

FIG. 8.8 Microstructural evolution in a thin film system with isotropic elasticity and two films in the simulation cell, the far-field composition is 0.05 leading to growth along with film break-up. From top left, the microstructures correspond to (non-dimensional) time units: t = 110 More about this image found in Microstructural evolution in a thin film system with isotropic elasticity a...

FIG. 8.9 Microstructural evolution in a thin film system with A Z = 1 3 . From top left, the microstructures correspond to (non-dimensional) time units: t = 9600, t = 11 400, t = 23 600 and t = 489 400, respectively. More about this image found in Microstructural evolution in a thin film system with A Z = 1 3 ...

FIG. 8.10 Microstructural evolution in a thin film system with A_Z = 1. From top left, in the clockwise direction, the microstructures correspond to (non-dimensional) time units: t = 2600, t = 3000, t = 4000, and t = 11 700, respectively. More about this image found in Microstructural evolution in a thin film system with A_Z...

FIG. 8.11 Microstructural evolution in a thin film system with A Z = 1 3 in 3D. From top left, in the clockwise direction, the microstructures correspond to (non-dimensional) time units: t = 100, t = 500, t = 1000, and t = 11 700 for the left More about this image found in Microstructural evolution in a thin film system with A Z = 1 3 ...

FIG. 13.3 Storyboards developed by schoolchildren in planning their animated films ( Piliouras et al., 2011 , p. 776). More about this image found in Storyboards developed by schoolchildren in planning their animated films ( ...

FIG. 5.11 Nanostrain analysis for nanocomposite YBCO films ( Llordés et al., 2012 ). (a) Williamson–Hall plots of the symmetric YBCO Bragg reflection, (b) dependence of the YBCO vertical nanostrain (determined from Williamson–Hall plots) on the incoherent specific interface of nanodots More about this image found in Nanostrain analysis for nanocomposite YBCO films ( Llordés et al....

FIG. 6.3 (a) Ferroelectric switching characteristics of the entirely rhombohedral film (condition I). (b) Ferroelectric switching characteristics of the super tetragonal film (condition II). (c) Ferroelectric switching characteristics of the mixed phase (T + R) film (condition More about this image found in (a) Ferroelectric switching characteristics of the entirely rhombohedral fi...

FIG. 8.4 Schematic of (symmetric and anti-symmetric, sinusoidal) perturbations at the film-matrix interfaces. More about this image found in Schematic of (symmetric and anti-symmetric, sinusoidal) perturbations at th...

FIG. 3.3 SIMS depth profiles showing Si accumulation at the film/substrate interface for MOCVD grown films. After BHF etch, the Si peak at the interface decreases by up to one order of magnitude. More about this image found in SIMS depth profiles showing Si accumulation at the film/substrate interface...