Skip Nav Destination
Search Results for
epitaxy
Update search
Filter
All
- All
- Title
- Author
- Author Affiliations
- Full Text
- Abstract
- Keyword
- DOI
- ISBN
- EISBN
- ISSN
- EISSN
- Issue
- Volume
- References
Filter
All
- All
- Title
- Author
- Author Affiliations
- Full Text
- Abstract
- Keyword
- DOI
- ISBN
- EISBN
- ISSN
- EISSN
- Issue
- Volume
- References
Filter
All
- All
- Title
- Author
- Author Affiliations
- Full Text
- Abstract
- Keyword
- DOI
- ISBN
- EISBN
- ISSN
- EISSN
- Issue
- Volume
- References
Filter
All
- All
- Title
- Author
- Author Affiliations
- Full Text
- Abstract
- Keyword
- DOI
- ISBN
- EISBN
- ISSN
- EISSN
- Issue
- Volume
- References
Filter
All
- All
- Title
- Author
- Author Affiliations
- Full Text
- Abstract
- Keyword
- DOI
- ISBN
- EISBN
- ISSN
- EISSN
- Issue
- Volume
- References
Filter
All
- All
- Title
- Author
- Author Affiliations
- Full Text
- Abstract
- Keyword
- DOI
- ISBN
- EISBN
- ISSN
- EISSN
- Issue
- Volume
- References
NARROW
Format
Book Series
Date
Availability
1-20 of 135 Search Results for
epitaxy
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
10.1063/9780735425033_003
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
...Alema, F., Seryogin, G., and Osinsky, A., “MOCVD growth of β-Ga2O3 epitaxy,” in Ultrawide Bandgap β-Ga2O3 Semiconductor: Theory and Applications, edited by J. S. Speck and E. Farzana (AIP Publishing, Melville, New York, 2023), pp. 3-1–3-34...
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
10.1063/9780735425033_004
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
...Mauze, A. and Speck, J. S., “Molecular beam epitaxy of β-Ga2O3,” in Ultrawide Bandgap β-Ga2O3 Semiconductor: Theory and Applications, edited by J. S. Speck and E. Farzana (AIP Publishing, Melville, New York, 2023), pp...
Images
Published: February 2023
FIG. 1.10 β-Ga2O3 epitaxy growth (a) HVPE ( Ahmadi and Oshima, 2019 ) and (b) MBE growth chamber (UCSB). More about this image found in β-Ga2O3 epitaxy growth (a) HVPE ( Ahmadi and Oshima, ...
Images
in Strain Engineering in Crystalline Solids
> Strain Engineering in Functional Materials and Devices
Published: March 2023
FIG. 1.10 Schematic of epitaxially grown unit cells representing a film under planar compressive strain. More about this image found in Schematic of epitaxially grown unit cells representing a film under planar ...
Images
in Strain Engineering in Crystalline Solids
> Strain Engineering in Functional Materials and Devices
Published: March 2023
FIG. 1.11 Schematic of epitaxially grown unit cells representing a film under planar tensile strain. More about this image found in Schematic of epitaxially grown unit cells representing a film under planar ...
Images
in Strain Engineering in Crystalline Solids
> Strain Engineering in Functional Materials and Devices
Published: March 2023
FIG. 1.14 Schematic of RSM scan (a) for completely strained epitaxial layer and (b) for completely strain relaxed epitaxial layer. More about this image found in Schematic of RSM scan (a) for completely strained epitaxial layer and (b) f...
Images
in Strain Engineering of Metal Insulator Transition in VO2
> Strain Engineering in Functional Materials and Devices
Published: March 2023
FIG. 4.6 (a) XRD of thickness-dependent VO2 epitaxial film on rutile TiO2 substrate; (b) schematic shows the growth of rutile VO2 phase on rutile TiO2; (c) resistance–temperature plot; and (d) corresponding differential resistance plot showing occurrences of resistance drop at different temperatures for varied VO2 film thickness ( Fan et al., 2014 ). More about this image found in (a) XRD of thickness-dependent VO2 epitaxial film on rutile TiO...
Images
in Phase-Field Modeling of Ferroic Domains in Strained Structures
> Strain Engineering in Functional Materials and Devices
Published: March 2023
FIG. 6.1 Schematic of an epitaxially grown thin film on a substrate. More about this image found in Schematic of an epitaxially grown thin film on a substrate.
Images
in Impact of Strain on the Electronic and Optoelectronic Properties of III-Nitride Semiconductor Heterostructures
> Strain Engineering in Functional Materials and Devices
Published: March 2023
FIG. 3.5 Long-wavelength dilation (periodic contraction and relaxation) generated on the surface of an epitaxially grown layer on a foreign substrate. More about this image found in Long-wavelength dilation (periodic contraction and relaxation) generated on...
Book Chapter
Series: AIPP Books, Principles
Published: March 2023
10.1063/9780735425590_010
EISBN: 978-0-7354-2559-0
ISBN: 978-0-7354-2556-9
... (the magnetic phase is mostly electronically conducting) and greater freedom and flexibility in the fabrication. 2-2 type ME composites are deposited by different techniques such as pulsed laser deposition, chemical vapor deposition, sputtering, molecular beam epitaxy, spin coating, spray pyrolysis, and spin...
Book Chapter
Series: AIPP Books, Principles
Published: March 2023
0
EISBN: 978-0-7354-2559-0
ISBN: 978-0-7354-2556-9
.... , and Chen , L. Q. , “ Ferroelectric domain morphologies of (001) PbZr1 − xTixO3 epitaxial thin films ,” J. Appl. Phys. 97 ( 3 ), 034112 ( 2005 ). 10.1063/1.1849820 Lou , X. J. , Yang , C. X. , Tang , T. A. , Lin , Y. Y. , Zhang , M. , and Scott , J. F...
Book Chapter
Series: AIPP Books, Principles
Published: March 2023
10.1063/9780735425590_001
EISBN: 978-0-7354-2559-0
ISBN: 978-0-7354-2556-9
... the concept of strain in crystalline solids. In subsequent chapters, we show how strain engineering or tailoring of strain fields via different methods (e.g., epitaxy, strain-capping layer, patterning, etc.) can be used to alter the physical properties of crystals. A crystalline solid or a crystal refers...
Book Chapter
Series: AIPP Books, Principles
Published: March 2023
0
EISBN: 978-0-7354-2559-0
ISBN: 978-0-7354-2556-9
...References References Amano , H. , Akasaki , I. , Hiramatsu , K. , Koide , N. , and Sawaki , N. , “ Effects of the buffer layer in metalorganic vapour phase epitaxy of GaN on sapphire substrate ,” Thin Solid Films 163 , 415 – 420 ( 1988 ). 10.1016/0040-6090(88)90458-0...
Book Chapter
Series: AIPP Books, Principles
Published: March 2023
10.1063/9780735425590_007
EISBN: 978-0-7354-2559-0
ISBN: 978-0-7354-2556-9
..., such canted antiferromagnetic spin ordering is expected to give rise to zero magnetic moment. However, there are studies on TMO that show TMO exhibit net moments when grown epitaxially on cubic single crystalline substrates ( Kirby et al., 2009 ; Marti et al., 2009 ; and Rubi et al...
Book Chapter
Series: AIPP Books, Principles
Published: March 2023
0
EISBN: 978-0-7354-2559-0
ISBN: 978-0-7354-2556-9
... Blok , J. L. , Blank , D. H. A. , Rijnders , G. , Rabe , K. , and Vanderbilt , D. , “ Interplay of epitaxial strain and rotations in PbTiO3/PbZrO3 superlattices from first principles ,” Phys. Rev. B 84 , 205413 ( 2011 ). 10.1103/PhysRevB.84.205413...
Book Chapter
Series: AIPP Books, Principles
Published: March 2023
0
EISBN: 978-0-7354-2559-0
ISBN: 978-0-7354-2556-9
....77.317 11 Cullis , A. G. , Robbins , D. J. , Pidduck , A. J. , and Smith , P. W. , “ The characteristics of strain-modulated surface undulations formed upon epitaxial Si1−xGex alloy layers on Si ,” J. Cryst. Growth 123 , 333 – 343 ( 1992...
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
0
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
...References References Ahmadi , E. , Koksaldi , O. S. , Kaun , S. W. , Oshima , Y. , Short , D. B. , Mishra , U. K. , and Speck , J. S. , “ Ge doping of β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy ,” Appl. Phys. Express 10...
Book Chapter
Series: AIPP Books, Principles
Published: March 2023
0
EISBN: 978-0-7354-2559-0
ISBN: 978-0-7354-2556-9
.... A. , Richter , W. , and Sitter , H. , Epitaxy: Physical Principles and Technical Implementation ( Springer Science & Business Media , 2013 ), Vol. 62. Hill , N. A. , Why are there so few magnetic ferroelectrics? ( 2000 ). Kidd , P. , XRD of Gallium Nitride and Related...
Book Chapter
Series: AIPP Books, Principles
Published: March 2023
10.1063/9780735425590_003
EISBN: 978-0-7354-2559-0
ISBN: 978-0-7354-2556-9
.... Such relaxation could have resulted as a consequence of forming a large number of misfits and threading dislocations, which in turn break the long-range ordering that prevailed in the epilayer. This is the fundamental origin of strain in thin films grown epitaxially on a foreign substrate. In the following...
Book Chapter
Series: AIPP Books, Principles
Published: March 2023
0
EISBN: 978-0-7354-2559-0
ISBN: 978-0-7354-2556-9
.... , “ Flexible multiferroic bulk heterojunction with giant magnetoelectric coupling via van der Waals Epitaxy ,” ACS Nano 11 , 6122 – 6130 ( 2017 ). 10.1021/acsnano.7b02102 Bhat , A. P. and Ramadurai , R. , “ Estimation of gradient size of interfacial strain and its optimization...
1