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Book Chapter

Index

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Series: AIPP Books, Principles
Published: February 2023
10.1063/9780735425033_index
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
... Semiconductor: Theory and Applications is a comprehensive overview of β-Ga2O3 semiconductor and its application in power electronic devices. It introduces readers to fundamental properties, addresses recent developments and existing challenges in growth and devices of β...
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Book Chapter

Front Matter

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Series: AIPP Books, Principles
Published: February 2023
10.1063/9780735425033_frontmatter
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
...-Ga2O3 Semiconductor: Theory and Applications is a comprehensive overview of β-Ga2O3 semiconductor and its application in power electronic devices. It introduces readers to fundamental properties, addresses recent developments and existing challenges in growth and devices of β...
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References

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Series: AIPP Books, Principles
Published: February 2023
0
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
..., vertical channel field-effect transistors ,” J. Appl. Phys.   53 ( 3 ), 1759 – 1764 ( 1982 ). 10.1063/1.331646 Baliga , B. J. , “ Power semiconductor device figure of merit for high-frequency applications ,” IEEE Electron Device Lett.   10 ( 10 ), 455 – 457 ( 1989 ). 10.1109/55.43098...
Images
(a) Schematic of a β-Ga2O3 SBD with a trench-filled SiO2 dielectric for edge termination. (b) Forward I–V characteristics and differential RON,sp of several representative devices. (c) Reverse breakdown characteristics of several representative devices.

(a) Schematic of a β-Ga2O3 SBD with a trench-filled S...

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in High Breakdown Voltage β-Ga2O3 Schottky Diodes > Ultrawide Bandgap β-Ga2O3 SemiconductorTheory and Applications
Published: February 2023
characteristics of several representative devices. Reprinted with permission from Dong et al., IEEE Electron Device Lett. 43 (5), 765–768 (2022). Copyright 2022 IEEE. More about this image found in (a) Schematic of a β-Ga2O3 SBD with a trench-filled S...
Book Chapter

References

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Series: AIPP Books, Principles
Published: March 2023
0
EISBN: 978-0-7354-2559-0
ISBN: 978-0-7354-2556-9
... voltage achieved on AlGaN/GaN HEMTs with integrated slant field plates ,” IEEE Electron Device Lett.   27 , 713 – 715 ( 2006 ). 10.1109/LED.2006.881020 Dupuis , R. D. and Krames , M. R. , “ History, development, and applications of high-brightness visible light-emitting diodes ,” J...
Images
Conception of the pinch rectifier or JBSD structure. The schematics illustrate (a) the current flow pattern in the forward conduction mode and (b) the depletion region in the reverse blocking mode.

Conception of the pinch rectifier or JBSD structure. The schematics illustr...

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in High Breakdown Voltage β-Ga2O3 Schottky Diodes > Ultrawide Bandgap β-Ga2O3 SemiconductorTheory and Applications
Published: February 2023
FIG. 8.20 Conception of the pinch rectifier or JBSD structure. The schematics illustrate (a) the current flow pattern in the forward conduction mode and (b) the depletion region in the reverse blocking mode. Reprinted with permission from Baliga, IEEE Electron Device Lett. 5 (6), 194–196 More about this image found in Conception of the pinch rectifier or JBSD structure. The schematics illustr...
Images
Comparison between reverse breakdown characteristics of β-Ga2O3 SBDs with no edge termination, He-implanted edge termination, and Mg-implanted edge termination.

Comparison between reverse breakdown characteristics of β-Ga2O...

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in High Breakdown Voltage β-Ga2O3 Schottky Diodes > Ultrawide Bandgap β-Ga2O3 SemiconductorTheory and Applications
Published: February 2023
FIG. 8.12 Comparison between reverse breakdown characteristics of β-Ga2O3 SBDs with no edge termination, He-implanted edge termination, and Mg-implanted edge termination. Reprinted with permission from Zhang et al., IEEE Trans. Electron Devices 67 (10), 3948 More about this image found in Comparison between reverse breakdown characteristics of β-Ga2O...
Book Chapter

Index

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Series: AIPP Books, Principles
Published: March 2023
10.1063/9780735424395_index
EISBN: 978-0-7354-2439-5
ISBN: 978-0-7354-2436-4
...MEMS Applications in Electronics and Engineering is a state-of-the-art resource for scientists and students in sensor/device research. It provides a thorough overview of the latest applications and devices in nano-scale sensors and their role in diagnostics, consumer electronics...
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(a) Schematic of a field-plated β-Ga2O3 trench SBD. (b) Cross-sectional scanning electron microscopy image of a fin channel. (c) Reverse breakdown characteristics of field-plated β-Ga2O3 trench SBDs. In comparison with regular β-Ga2O3 SBDs employing both mesa and field-plate terminations, the field-plated trench devices have a much lower leakage current and a much higher Vbr. (d) Forward I–V characteristics and differential RON,sp of field-plated β-Ga2O3 trench SBDs under DC and pulsed conditions. A base voltage of 0 V, a pulse width of 1 µs, and a duty cycle of 0.1% are used for the pulsed measurements.

(a) Schematic of a field-plated β-Ga2O3 trench SBD. (...

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in High Breakdown Voltage β-Ga2O3 Schottky Diodes > Ultrawide Bandgap β-Ga2O3 SemiconductorTheory and Applications
Published: February 2023
-Ga2O3 trench SBDs under DC and pulsed conditions. A base voltage of 0 V, a pulse width of 1 µs, and a duty cycle of 0.1% are used for the pulsed measurements. Reprinted with permission from Li et al., IEEE Electron Device Lett. 41 (1), 107–110 (2020a). Copyright 2020 IEEE. More about this image found in (a) Schematic of a field-plated β-Ga2O3 trench SBD. (...
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Conception of the FMR termination technique for a vertical diode structure, implemented here in a p–n junction diode: (a) cross-sectional structure and (b) qualitative potential distribution at reverse bias.

Conception of the FMR termination technique for a vertical diode structure,...

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in High Breakdown Voltage β-Ga2O3 Schottky Diodes > Ultrawide Bandgap β-Ga2O3 SemiconductorTheory and Applications
Published: February 2023
Electron Device Lett. 6 (11), 600–601 (1985). Copyright 1985 IEEE. More about this image found in Conception of the FMR termination technique for a vertical diode structure,...
Images
Conception of the field-plate termination technique for a vertical diode structure, implemented here in a p–n junction diode. The surface electric field at the edge of the junction is modulated by an externally applied gate voltage (VG).

Conception of the field-plate termination technique for a vertical diode st...

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in High Breakdown Voltage β-Ga2O3 Schottky Diodes > Ultrawide Bandgap β-Ga2O3 SemiconductorTheory and Applications
Published: February 2023
with permission from Grove et al., IEEE Trans. Electron Devices 14 (3), 157–162 (1967). Copyright 1967 IEEE. More about this image found in Conception of the field-plate termination technique for a vertical diode st...
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Simulated electric-field profiles in a β-Ga2O3 trench SBD along a vertical cutline at the center of a fin channel [see Fig. 8.23(a)] under a reverse bias of −1375 V by varying (a) Wfin and (b) dtr.

Simulated electric-field profiles in a β-Ga2O3 trench...

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in High Breakdown Voltage β-Ga2O3 Schottky Diodes > Ultrawide Bandgap β-Ga2O3 SemiconductorTheory and Applications
Published: February 2023
with permission from Li et al., IEEE Trans. Electron Devices 67 (10), 3938–3947 (2020b). Copyright 2020 IEEE. More about this image found in Simulated electric-field profiles in a β-Ga2O3 trench...
Book Chapter

References

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Series: AIPP Books, Principles
Published: February 2023
0
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
.... , Kim , H.-Y. , and Kim , J. , “ Contacting mechanically exfoliated β-Ga2O3 nanobelts for (opto)electronic device applications ,” ECS J. Solid State Sci. Technol.   6 ( 2 ), Q3045 – Q3048 ( 2017 ). 10.1149/2.0091702jss Baldini , M. , Albrecht , M...
Book Chapter

Impact of Strain on the Electronic and Optoelectronic Properties of III-Nitride Semiconductor Heterostructures

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Series: AIPP Books, Principles
Published: March 2023
10.1063/9780735425590_003
EISBN: 978-0-7354-2559-0
ISBN: 978-0-7354-2556-9
... an integral part of our daily life. Any electronic device we use in our daily life contains either Si or Ge or both. In particular, Si has played an unprecedented role in the revolution of the semiconductor industry that happened over five decades. A significant volume of reports depicting the effect...
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Schematics of an unterminated β-Ga2O3 SBD, a β-Ga2O3 SBD with self-aligned fluorine plasma treatment (FPT), and a β-Ga2O3 SBD with self-aligned beveled fluorine plasma treatment (BFPT). (b) Forward I–V characteristics and differential RON,sp of the three different SBDs. (c) Reverse breakdown characteristics of the three different SBDs.

Schematics of an unterminated β-Ga2O3 SBD, a β-Ga

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in High Breakdown Voltage β-Ga2O3 Schottky Diodes > Ultrawide Bandgap β-Ga2O3 SemiconductorTheory and Applications
Published: February 2023
characteristics and differential RON,sp of the three different SBDs. (c) Reverse breakdown characteristics of the three different SBDs. Reprinted with permission from Hu et al., IEEE Electron Device Lett. 41 (3), 441–444 (2020a). Copyright 2020 IEEE. More about this image found in Schematics of an unterminated β-Ga2O3 SBD, a β-Ga
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Structure of typical III-nitride LEDs. Device operation depends on the lateral current injection. The buffer layer is grown on a substrate at low temperatures to accommodate high lattice mismatch. (a) InGaN MQW-based LEDs for blue/green/yellow LEDs. AlGaN-based electron blocking layer is used to prevent injected electrons from escaping the active region. (b) AlGaN MQW-based UV LEDs. p-GaN is grown on p-AlGaN to prevent oxidation of aluminum.

Structure of typical III-nitride LEDs. Device operation depends on the late...

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in Impact of Strain on the Electronic and Optoelectronic Properties of III-Nitride Semiconductor Heterostructures > Strain Engineering in Functional Materials and Devices
Published: March 2023
FIG. 3.14 Structure of typical III-nitride LEDs. Device operation depends on the lateral current injection. The buffer layer is grown on a substrate at low temperatures to accommodate high lattice mismatch. (a) InGaN MQW-based LEDs for blue/green/yellow LEDs. AlGaN-based electron blocking layer More about this image found in Structure of typical III-nitride LEDs. Device operation depends on the late...
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References

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Series: AIPP Books, Principles
Published: February 2023
0
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
...References References Adler , M. S. , Temple , V. A. K. , Ferro , A. P. , and Rustay , R. C. , “ Theory and breakdown voltage for planar devices with a single field limiting ring ,” IEEE Trans. Electron Devices   24 ( 2 ), 107 – 113 ( 1977 ). 10.1109/T-ED.1977.18688...
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Series: AIPP Books, Principles
Published: March 2023
0
EISBN: 978-0-7354-2439-5
ISBN: 978-0-7354-2436-4
... on pull-in voltage of RF MEMS SPDT switch ,” IEEE Trans. Electron Devices   67 ( 5 ), 2147 – 2152 ( 2020 ). 10.1109/TED.2020.2982667 Bansal , D. , Bajpai , A. , Kumar , P. , Kumar , A. , Kaur , M. , and Rangra , K. , “ Design and fabrication of a reduced stiction radio...
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Series: AIPP Books, Principles
Published: March 2023
0
EISBN: 978-0-7354-2439-5
ISBN: 978-0-7354-2436-4
.... , “ Single-chip CMOS anemometer ,” in Technical Digest—International Electron Devices Meeting (IEDM) ( IEEE , 1997 ), pp. 895 – 898 . Michaelis , S. , Timme , H. J. , Wycisk , M. , and Binder , J. , “ Acceleration threshold switches from an additive electroplating MEMS process...
Images
(a) Schematic of a β-Ga2O3 SBD with an ultrahigh-permittivity field-plate dielectric, where S1 corresponds to a 15-period BaTiO3/SrTiO3 superlattice as the field-plate oxide [(BTO/STO)15 FP] and S2 corresponds to BaTiO3 as the field-plate oxide (BTO FP). The cross-sectional transmission electron microscopy (TEM) image depicts the field-plated region of the S1 structure. (b) Forward I–V characteristics and differential RON,sp of a β-Ga2O3 SBD with (BTO/STO)15 FP, a β-Ga2O3 SBD with BTO FP, and a reference SBD without a field plate. (c) Reverse breakdown characteristics of the three different SBD structures.

(a) Schematic of a β-Ga2O3 SBD with an ultrahigh-perm...

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in High Breakdown Voltage β-Ga2O3 Schottky Diodes > Ultrawide Bandgap β-Ga2O3 SemiconductorTheory and Applications
Published: February 2023
)15 FP, a β-Ga2O3 SBD with BTO FP, and a reference SBD without a field plate. (c) Reverse breakdown characteristics of the three different SBD structures. Reprinted with permission from Roy et al., IEEE Electron Device Lett. 42 (8), 1140–1143 (2021). Copyright 2021 More about this image found in (a) Schematic of a β-Ga2O3 SBD with an ultrahigh-perm...