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1-20 of 266 Search Results for
electron trap
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
0
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
.... , Fleetwood , D. M. , Ye , P. D. , and Ma , T.-P. , “ Charge trapping in Al2O3/β-Ga2O3-based MOS capacitors ,” IEEE Electron Device Lett. 39 ( 7 ), 1022 – 1025 ( 2018 ). 10.1109/LED.2018.2841899 Blanco , M. A. , Sahariah , M. B...
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
10.1063/9780735425033_010
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
... after dry etching is usually unavoidable and can be quite problematic as it introduces trap sites for charged carriers and thus influences electronic device performance and functionality. A subsequent wet etch treatment using hot phosphoric acid has shown to be an effective way to remove such plasma...
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
10.1063/9780735425033_012
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
... to increase in concentration, located at EC-0.56 eV, 0.75 eV, and 1.4 eV, one of which (EC-0.75 eV) was not seen in the as-grown material. This work reported that the EC–0.75 eV trap (referred to as E2∗) is a significant compensator of free electrons...
Book Chapter
Series: AIPP Books, Principles
Published: March 2023
10.1063/9780735424395_001
EISBN: 978-0-7354-2439-5
ISBN: 978-0-7354-2436-4
...Basu, A., Basu, A. K., Ghosh, S., and Bhattacharya, S., “Introduction to MEMS applications in electronics and engineering,” in MEMS Applications in Electronics and Engineering, edited by A. K. Basu, A. Basu, S. Ghosh, and S. Bhattacharya (AIP Publishing, Melville, New York, 2023), pp. 1-1...
Book Chapter
Series: AIPP Books, Principles
Published: March 2023
0
EISBN: 978-0-7354-2439-5
ISBN: 978-0-7354-2436-4
.... , Bhattacharya , S. , Chen , X. , Barizuddin , S. , Gangopadhyay , S. , and Gillis , K. D. , “ A microfluidic cell trap device for automated measurement of quantal catecholamine release from cells ,” Lab Chip 9 , 3442 – 3446 ( 2009 ). 10.1039/B913216C Gupta , A. , Sundriyal...
Book Chapter
Series: AIPP Books, Principles
Published: March 2023
0
EISBN: 978-0-7354-2439-5
ISBN: 978-0-7354-2436-4
... ), 1351 – 1354 ( 1977 ). 10.1103/PhysRevLett.38.1351 Ashkin , A. , Dziedzic , J. M. , Bjorkholm , J. E. , and Chu , S. , “ Observation of a single-beam gradient force optical trap for dielectric particles ,” Opt. Lett. 11 ( 5 ), 288 –290 ( 1986 ). 10.1364/OL.11.000288...
Book Chapter
Series: AIPP Books, Principles
Published: March 2023
10.1063/9780735424395_007
EISBN: 978-0-7354-2439-5
ISBN: 978-0-7354-2436-4
... rotate in circularly polarized beams ( Friese et al., 1998 ). Recently, the optical acceleration of electrons has also been demonstrated ( Peralta et al., 2013 ). Most of the trapping and translation of dielectrics in fluid-suspended form is performed with the help of optical gradient...
Book Chapter
Series: AIPP Books, Principles
Published: March 2023
10.1063/9780735425590_002
EISBN: 978-0-7354-2559-0
ISBN: 978-0-7354-2556-9
... an external perturbation like electric or magnetic field, photons, etc. Among these, the application of external pressure introduces a strain field in a material which can lead to changes in the atomic and electronic structures. Other intuitive ways also exist in which the strain field can be created locally...
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
10.1063/9780735425033_006
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
... states. The polarons lead to the formation of self-trapped excitons when electron-hole pairs are created via bandgap excitation. Calculations have predicted an extremely facile formation of the self-trapped hole states in Ga2O3 with self-trapping energies of 0.53–0.58 eV that have...
Book Chapter
Series: AIPP Books, Principles
Published: March 2023
10.1063/9780735425590_005
EISBN: 978-0-7354-2559-0
ISBN: 978-0-7354-2556-9
..., which are often referred to as interface states, are formed at a GB, the interface states trap electrons from the adjacent grains and the GB becomes negatively charged. As a result, a DSB is formed, which can be resistive against electric current flow across the GB. FIG. 5.4...
Book Chapter
Series: AIPP Books, Principles
Published: March 2023
10.1063/9780735425590_003
EISBN: 978-0-7354-2559-0
ISBN: 978-0-7354-2556-9
...Nag, D. and Laha, A., “Impact of strain on the electronic and optoelectronic properties of III-nitride semiconductor heterostructures,” in Strain Engineering in Functional Materials and Devices, edited by R. Ramadurai and S. Bhattacharyya (AIP Publishing, Melville, New York, 2023), pp. 3-1...
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
10.1063/9780735425033_011
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
..., Melville, New York, 2023), pp. 11-1–11-30. Ultra-wide bandgap β-Ga2O3 is promising for high-performance power electronic devices due to its large critical breakdown field strength and controllable doping. High density delta-doped channel layers are critical for realizing scaled...
Book Chapter
Series: AIPP Books, Professional
Published: March 2023
10.1063/9780735425477_009
EISBN: 978-0-7354-2547-7
ISBN: 978-0-7354-2544-6
...FIG. 9.1 Students' conceptions about climate change resulting from the greenhouse effect (top) via sun rays (a) and heat rays (b) and by the ozone hole (bottom) via sun rays (a), perhaps because they become trapped beneath the ozone layer (b). Modified from Figs. 5 and 6 of Niebert...
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
10.1063/9780735425033_008
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
... in these devices is correlated with degradations in RON,sp and VON after off-state stressing due to electron trapping at deep-level defects. These observations call attention to the deleterious effects of ion-implanted edge-termination techniques on the dynamic...
Book
Series: AIPP Books, Principles
Published: March 2023
10.1063/9780735424395
EISBN: 978-0-7354-2439-5
ISBN: 978-0-7354-2436-4
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
0
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
... ,” Solid-State Electron. 35 ( 3 ), 285 – 297 ( 1992 ). 10.1016/0038-1101(92)90232-2 Bhandari , S. , Zvanut , M. E. , and Varley , J. B. , “ Optical absorption of Fe in doped Ga2O3 ,” J. Appl. Phys. 126 ( 16 ), 165703 ( 2019 ). 10.1063/1.5124825...
Book
Series: AIPP Books, Principles
Published: March 2023
10.1063/9780735425590
EISBN: 978-0-7354-2559-0
ISBN: 978-0-7354-2556-9
Book Chapter
Series: AIPP Books, Professional
Published: March 2023
10.1063/9780735425477_017
EISBN: 978-0-7354-2547-7
ISBN: 978-0-7354-2544-6
... of electronic coaching and modeling, which is more consistent with cognitive apprenticeship, appears to be more successful at motivating students to persist. Analogical reasoning can be a useful approach to help students learn physics problem-solving, especially when they have strong alternative conceptions...
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
0
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
.... , Hu , Z. , “ Trapping and detrapping mechanisms in β-Ga₂O₃ vertical FinFETs investigated by electro-optical measurements ,” IEEE Trans. Electron Devices 67 ( 10 ), 3954 – 3959 ( 2020 ). 10.1109/TED.2020.3013242 Farzana , E. , Ahmadi , E. , Speck , J. S. , Arehart , A. R...
Book
Series: AIPP Books, Professional
Published: March 2023
10.1063/9780735425477
EISBN: 978-0-7354-2547-7
ISBN: 978-0-7354-2544-6
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