... to diffuse into the p region, given in Fig. 7.3 . During the penetration, the photon strikes the silicon atom near the pn junction with enough energy to knock an electron out of the valence shell, resulting in the particular electron becoming a “free electron.” This is commonly known...

... transistors ,” ACS Appl. Mater. Interfaces   9 ( 46 ), 40471 – 40476 ( 2017a ). 10.1021/acsami.7b13881 Yang , J. , Ren , F. , Pearton , S. J. , Yang , G. , Kim , J. , and Kuramata , A. , “ 1.5 MeV electron irradiation damage in β-Ga₂O₃ vertical...

...., 2018b ). Hence, this chapter focuses on the state of knowledge regarding defects created by proton and neutron irradiation, which have been the most studied to date, along with electron, alpha, x-ray, and gamma irradiation, and their effect on material and device characteristics. Identifying specific...

... P where I_irr is the photocurrent or irradiance current, which is generated when the cell is exposed to sunlight, where q is the electronic charge (q = 1.602 1019 C), k is the Boltzmann constant (k = 1.3806503 1023 J/K), n...

... be calculated as (6.2) P A C = P A C P r where G_eff (W/m²) is the effective incident irradiance, η_g is the efficiency of the PV generator, A_g is the active surface of the PV generator (m²...

... in connection to elementary particles, for example, in connection to the negatively charged electrons (e.g., Wiener et al., 2017a ; Woithe et al., 2017 ; Alexopoulos et al., 2019 ; and Atkin, 2019 ). Finally, the interconnection can be highlighted by focusing on the fundamental...

... is shining, making them unable to satisfy the needs of a real application. In this case, PV panels have to be coupled with other electronics and components to make the electricity produced that can be finally utilized by the end-users. According to the connection without/with the public grid, these coupled...

.... , Zaimi , M. , Ibral , A. , and Assaid , E. , “ New analytical approach for modelling effects of temperature and irradiance on physical parameters of PV solar module ,” Energy Convers. Manage.   177 , 258 – 271 ( 2018 ). 10.1016/j.enconman.2018.09.054 Alsadi , S. and Khatib , T...

... irradiation on conductivity and deep level defects in β-Ga₂O₃ ,” APL Mater.   7 , 022510 ( 2019 ). 10.1063/1.5054826 Janowitz , C. , Scherer , V. , Mohamed , M. , Krapf , A. , Dwelk , H. , Manzke , R.   , “ Experimental electronic structure...

... ,” IEEE Electron Device Lett.   38 ( 1 ), 95 – 98 ( 2017a ). 10.1109/LED.2016.2634528 Wong , M.H.   , “ Radiation hardness of Ga₂O₃ MOSFETs against gamma-ray irradiation ,” in 2017 75th Annual Device Research Conference (DRC) (IEEE, South Bend , 2017b ), pp. 1 – 2...

... ,” Solid-State Electron.   35 ( 3 ), 285 – 297 ( 1992 ). 10.1016/0038-1101(92)90232-2 Bhandari , S. , Zvanut , M. E. , and Varley , J. B. , “ Optical absorption of Fe in doped Ga₂O₃ ,” J. Appl. Phys.   126 ( 16 ), 165703 ( 2019 ). 10.1063/1.5124825...

.... Farzana (AIP Publishing, Melville, New York, 2023), pp. 5-1–5-24. Gallium oxide is attractive for high-power electronics due to its wide band gap and its ability to be n-type doped. Point defects play decisive roles in the physical properties of the material. By combining first-principles calculations...

... to introduce dopants that readily ionize at room temperature, leading to controllable populations of free electrons or holes that can be manipulated in an electronic device. Typically, as the band gap becomes larger in a material, the energies at which dopants introduce electronic states are increasingly...

... to be the next power electronics device of choice. In this section, the Ga₂O₃ material and device parameters behind this high performance are reviewed. The Ga₂O₃ device features that affect the power conversion system the most are identified and a direction is provided...

... , O. and Turkay , B. , “ Domestic electrical load management in smart grids and classification of residential loads ,” in 2018 5th International Conference on Electrical and Electronic Engineering (ICEEE) , May 3 ( IEEE , 2018 ), pp. 279 – 283 . Barakat , E. H. , Al-Qassim , J...