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Book Chapter
Series: AIPP Books, Principles
Published: February 2023
10.1063/9780735425033_007
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
...Kumar, A., Ghosh, K., and Singisetti, U., “Electron transport in β-Ga2O3 from first-principles,” in Ultrawide Bandgap β-Ga2O3Semiconductor: Theory and Applications, edited by J. S. Speck and E. Farzana (AIP Publishing...
Book
Book Cover Image
Series: AIPP Books, Principles
Published: March 2023
10.1063/9780735424395
EISBN: 978-0-7354-2439-5
ISBN: 978-0-7354-2436-4
Book Chapter
Series: AIPP Books, Principles
Published: March 2023
10.1063/9780735424395_001
EISBN: 978-0-7354-2439-5
ISBN: 978-0-7354-2436-4
...Basu, A., Basu, A. K., Ghosh, S., and Bhattacharya, S., “Introduction to MEMS applications in electronics and engineering,” in MEMS Applications in Electronics and Engineering, edited by A. K. Basu, A. Basu, S. Ghosh, and S. Bhattacharya (AIP Publishing, Melville, New York, 2023), pp. 1-1...
Images
Ultrasonic rangefinders as an <span class="search-highlight">electronic</span> component (left picture) (see:  ht...
Published: March 2023
FIG. 6.7 Ultrasonic rangefinders as an electronic component (left picture) (see: https://shorturl.at/fjmNS ) and Tri-axis digital accelerometer by Kionix, inside Motorola Xoom (right picture) [available at https://shorturl.at/ahtu1 ). More about this image found in Ultrasonic rangefinders as an electronic component (left picture) (see: ht...
Images
(a) Scanning <span class="search-highlight">electron</span> image of multilayer with 40 nm periodicity showing co...
Published: March 2023
FIG. 10.7 (a) Scanning electron image of multilayer with 40 nm periodicity showing continuous columnar structure. (b) Backscatter image showing insignificant interdiffusion between CFO and BCZT. More about this image found in (a) Scanning electron image of multilayer with 40 nm periodicity showing co...
Book Chapter
Series: AIPP Books, Principles
Published: March 2023
10.1063/9780735425590_003
EISBN: 978-0-7354-2559-0
ISBN: 978-0-7354-2556-9
...Nag, D. and Laha, A., “Impact of strain on the electronic and optoelectronic properties of III-nitride semiconductor heterostructures,” in Strain Engineering in Functional Materials and Devices, edited by R. Ramadurai and S. Bhattacharyya (AIP Publishing, Melville, New York, 2023), pp. 3-1...
Images
<span class="search-highlight">Electronic</span> structures of (a) monoclinic and orthorhombic LaVO<sub>3</sub> i...
Published: March 2023
FIG. 2.3 Electronic structures of (a) monoclinic and orthorhombic LaVO3 in bulk form as well as under strain and (b) different GB structures. Reproduced with permission from Raghunathan et al., Nano Lett. 14 , 4943–4950 (2014). Copyright 2014 American Chemical Society; and Jana et al., Phys. Rev. B 102 , 235108 (2020). Copyright 2020 American Physical Society. More about this image found in Electronic structures of (a) monoclinic and orthorhombic LaVO3 i...
Images
(a) Scanning <span class="search-highlight">electron</span> microscopy (SEM) images of the porous AAO cantilevers...
Published: March 2023
FIG. 8.2 (a) Scanning electron microscopy (SEM) images of the porous AAO cantilevers used for moisture sensing at different magnifications: (i) AAO cantilevers with a layer of gold coating of 30-nm thickness, (ii) enlarged SEM image of (i) reprinted with permission from Lee et al., Sens. Actuators B Chem. 137 (2), 561–565 (2009). Copyright 2009 Elsevier. (b) Fabrication of high surface area carbon nanotube (CNT)/carbon composite MC and measurement procedure comprises of (i) photolithographic patterning of a 4-nm iron (Fe) catalyst film, (ii) vertical growth of CNT forest from Fe catalyst, (iii) infiltration of the CNT forest and subsequent release from the substrate, and (iv) mounting of the fabricated device between a clamp and a piezoelectric element. Optical deflection measurement is then carried out using laser reflection (with permission to use under creative common license ( Noyce et al., 2019 ) published by the royal society of chemistry. More about this image found in (a) Scanning electron microscopy (SEM) images of the porous AAO cantilevers...
Book Chapter
Series: AIPP Books, Principles
Published: March 2023
10.1063/9780735424395_008
EISBN: 978-0-7354-2439-5
ISBN: 978-0-7354-2436-4
...Mukherjee, A. and Sakorikar, T., “Emerging trends in MEMS/NEMS based technologies for gas sensing applications,” in MEMS Applications in Electronics and Engineering, edited by A. K. Basu, A. Basu, S. Ghosh, and S. Bhattacharya (AIP Publishing, Melville, New York, 2023), pp. 8-1–8-32...
Book Chapter
Series: AIPP Books, Methods
Published: December 2022
10.1063/9780735425422_006
EISBN: 978-0-7354-2542-2
ISBN: 978-0-7354-2540-8
..., and electrical properties, but also make the job easier for the application counterpart ( Abd Mutalib et al., 2017 ). Among the plethora of these tools, electron diffraction-based techniques have exhibited flabbergasting results over the past few decades and are improving as time flies in terms...
Images
Book Chapter
Series: AIPP Books, Professional
Published: March 2023
EISBN: 978-0-7354-2547-7
ISBN: 978-0-7354-2544-6
... Atom ψ−function Notion of state SE Relating measurement to theory Higher order atoms Structure and visualization of the atom in orbitals (not in orbiting electrons) Electrons in the atom as a charge cloud whose behavior (e.g...
Book Chapter
Series: AIPP Books, Principles
Published: March 2023
10.1063/9780735424395_004
EISBN: 978-0-7354-2439-5
ISBN: 978-0-7354-2436-4
...Bhatt, M., “Recent trends in CMOS-MEMS sensors,” in MEMS Applications in Electronics and Engineering, edited by A. K. Basu, A. Basu, S. Ghosh, and S. Bhattacharya (AIP Publishing, Melville, New York, 2023), pp. 4-1–4-18. Introduction MEMS is currently one of the most explored areas due...
Book Chapter
Series: AIPP Books, Principles
Published: March 2023
10.1063/9780735424395_006
EISBN: 978-0-7354-2439-5
ISBN: 978-0-7354-2436-4
...Bansal, D., Rangra, K., and Agarwal, A., “Progress in RF MEMS/NEMS switches,” in MEMS Applications in Electronics and Engineering, edited by A. K. Basu, A. Basu, S. Ghosh, and S. Bhattacharya (AIP Publishing, Melville, New York, 2023), pp. 6-1–6-44. Introduction In 1965 ( Nathanson et...
Book Chapter
Series: AIPP Books, Principles
Published: March 2023
10.1063/9780735424395_007
EISBN: 978-0-7354-2439-5
ISBN: 978-0-7354-2436-4
...Sadasivan, V., “Optical MEMS (microspheres and ring resonators): Overview of recent progress,” in MEMS Applications in Electronics and Engineering, edited by A. K. Basu, A. Basu, S. Ghosh, and S. Bhattacharya (AIP Publishing, Melville, New York, 2023), pp. 7-1–7-70. Introduction Micro...
Images
Structure of typical III-nitride LEDs. Device operation depends on the late...
Published: March 2023
FIG. 3.14 Structure of typical III-nitride LEDs. Device operation depends on the lateral current injection. The buffer layer is grown on a substrate at low temperatures to accommodate high lattice mismatch. (a) InGaN MQW-based LEDs for blue/green/yellow LEDs. AlGaN-based electron blocking layer is used to prevent injected electrons from escaping the active region. (b) AlGaN MQW-based UV LEDs. p-GaN is grown on p-AlGaN to prevent oxidation of aluminum. More about this image found in Structure of typical III-nitride LEDs. Device operation depends on the late...
Images
Dependence of (a) <em>r</em><sub>11</sub>, (b) <em>r</em>...
Published: March 2023
FIG. 5.16 Dependence of (a) r11, (b) r22, and (c) r22 on scan rotation angle (A) in the scanning system distortion of a scanning transmission electron microscope ( Fujinaka et al., 2020 ). More about this image found in Dependence of (a) r11, (b) r...
Book Chapter
Series: AIPP Books, Principles
Published: March 2023
10.1063/9780735424395_index
EISBN: 978-0-7354-2439-5
ISBN: 978-0-7354-2436-4
...MEMS Applications in Electronics and Engineering is a state-of-the-art resource for scientists and students in sensor/device research. It provides a thorough overview of the latest applications and devices in nano-scale sensors and their role in diagnostics, consumer electronics...
Images
Band diagrams of the AlGaN/GaN heterostructure for HEMT. Strained AlGaN is ...
Published: March 2023
FIG. 3.20 Band diagrams of the AlGaN/GaN heterostructure for HEMT. Strained AlGaN is grown pseudomorphically on relaxed GaN. A positive polarization charge ( + σ ) is induced at the interface, which attracts electrons and forms 2DEG. More about this image found in Band diagrams of the AlGaN/GaN heterostructure for HEMT. Strained AlGaN is ...
Images
(a) Schematic illustration of unit cell of monoclinic phase (M1) and rutile...
Published: March 2023
FIG. 4.1 (a) Schematic illustration of unit cell of monoclinic phase (M1) and rutile phase (R) ( Goodenough, 1971 ) and (b) illustration of the electronic band structure of the M1 phase and R phase ( Lee et al., 2020 ). More about this image found in (a) Schematic illustration of unit cell of monoclinic phase (M1) and rutile...