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![Simulated electric-field profiles in a β-Ga2O3 trench SBD along a vertical cutline at the center of a fin channel [see Fig. 8.23(a)] under a reverse bias of −1375 V by varying (a) Wfin and (b) dtr.](https://aipp.silverchair-cdn.com/aipp/content_public/books/138/parts/chapter8/1/s_9780735425033_008_f8-24.jpeg?Expires=2147483647&Signature=Tt~~SIk-HK8FN8ZgNbMs4x8rhZ42L0JBJJtaoolbhxqn5JUHKx-TZ9tIXWZUzh9vFxRQjwao~bT5h2BC1gCdkzlHHVdyN-CJ~csBdBTniibS~J0cuySkULRIujBlgsmgbO1M5fWerP2ezuDUME-TXifWuvFX8Ac~D9rtF58GNjcAcBRSM1qz3dJqndif~mzIzW3G81AmJk9VkSyJEykDabB5Q0WfotMRL1OxNWnyMr5sO0sOVnIogdzv0ydkhCewItr0t3-3lsLfAo26DULIx3-NCxnQXtngsiEhCp0fPyO91-0ZgPwbwcOYc93pwCdW7o9RVCavaLYnbNHBfr85xQ__&Key-Pair-Id=APKAIE5G5CRDK6RD3PGA)
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Search Results for electricity
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Book Chapter
Series: AIPP Books, Professional
Published: March 2023
10.1063/9780735425477_005
EISBN: 978-0-7354-2547-7
ISBN: 978-0-7354-2544-6
...van Kampen, P. and De Cock, M., “Students’ understandings of electricity and magnetism,” in The International Handbook of Physics Education Research: Learning Physics, edited by M. F. Taşar and P. R. L. Heron (AIP Publishing, Melville, New York, 2023), pp. 5-1–5-24. Introduction Writing...
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in Frontiers of Photovoltaic Systems for Smart City
> Toward Better Photovoltaic SystemsDesign, Simulation, Optimization, Analysis, and Operations
Published: March 2023
FIG. 7.2 Electricity generation, conversion, and supply for a PV system. More about this image found in Electricity generation, conversion, and supply for a PV system.
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in Toward Smart Energy Generation Using Economic Model Predictive Control
> Energy Systems and ProcessesRecent Advances in Design and Control
Published: March 2023
FIG. 7.2 Schematic of a coal-fired boiler-turbine electricity generation system ( Zhang et al. , 2020 ). More about this image found in Schematic of a coal-fired boiler-turbine electricity generation system ( Zh...
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in Students' Understandings of Electricity and Magnetism
> The International Handbook of Physics Education Research: Learning Physics
Published: March 2023
FIG. 5.1 Topics in students' understanding of electricity and magnetism. More about this image found in Topics in students' understanding of electricity and magnetism.
Book Chapter
Series: AIPP Books, Principles
Published: March 2023
10.1063/9780735425590_010
EISBN: 978-0-7354-2559-0
ISBN: 978-0-7354-2556-9
...Bhat, A. P. and Ramadurai, R., “Strain engineering in 2-2 multilayered magneto-electric (ME) nanocomposites,“ in Strain Engineering in Functional Materials and Devices, edited by R. Ramadurai and S. Bhattacharyya (AIP Publishing, Melville, New York, 2023), pp. 10-1–10-20. Introduction...
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in Physics Teacher Education for Early Science Learners
> The International Handbook of Physics Education Research: Teaching Physics
Published: March 2023
FIG. 13.3 Two examples of electrical circuits assembled by students during the exam. More about this image found in Two examples of electrical circuits assembled by students during the exam.
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in Frontiers of Photovoltaic Systems for Smart City
> Toward Better Photovoltaic SystemsDesign, Simulation, Optimization, Analysis, and Operations
Published: March 2023
FIG. 7.3 The working mechanism of a PV cell ( Electrical A2Z ). More about this image found in The working mechanism of a PV cell ( Electrical A2Z ).
Book Chapter
Series: AIPP Books, Principles
Published: May 2022
10.1063/9780735422339_006
EISBN: 978-0-7354-2233-9
ISBN: 978-0-7354-2230-8
... electricity consumers in distribution networks brings substantial advantages while introducing several technical, economic, and operational challenges to the power system ( EIA—Electricity Data ). This would respond to the performance of the power system by exploiting demand response (DR) and/or distributed...
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in Microscopic-Strain-Related Phenomena in Functional Oxides
> Strain Engineering in Functional Materials and Devices
Published: March 2023
FIG. 5.20 (a) Schematic illustration of in situ electrical biasing TEM ( Sato et al., 2011 , 2012 ). DF-TEM image of PMN–PT and corresponding schematic drawing of domain structure (b) without an electric field, (c) under an electric field of 24.4 kV/cm, and (d) after removing More about this image found in (a) Schematic illustration of in situ electrical biasing T...
Book Chapter
Series: AIPP Books, Professional
Published: March 2023
10.1063/9780735425514_020
EISBN: 978-0-7354-2551-4
ISBN: 978-0-7354-2548-4
... on kinematics. In 2004, Forster looked at questions with a graphical component on Tertiary Entrance Examinations in Western Australia (Foster, 2004). The questions related to topics other than mechanics, such as “Sound wave”, “Electric power,” “Structures and material,” and one on “movement. In summary...
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in Microscopic-Strain-Related Phenomena in Functional Oxides
> Strain Engineering in Functional Materials and Devices
Published: March 2023
FIG. 5.21 (a) ADF-STEM images and (b) lattice parameter (c) maps under 0 kV/cm and ±13.8 kV/cm. (c) Relationship between Δa and electric field and (d) relationship between Δc and electric field ( Sato et al., 2020 ). Δa and Δc correspond More about this image found in (a) ADF-STEM images and (b) lattice parameter (c) maps und...
Book Chapter
Series: AIPP Books, Principles
Published: March 2023
10.1063/9780735425590_003
EISBN: 978-0-7354-2559-0
ISBN: 978-0-7354-2556-9
... strain around the hetero-interface ( Lucovsky, 2001 ). This may have huge implications on the properties of the devices that primarily rely on the quality (electrical and structural) of their hetero-interface. Another source of strain within a material is the external pressure (hydrostatic strain...
Images
Published: February 2023
FIG. 1.4 (a) Relationship of bandgap and critical breakdown electric field for direct and indirect semiconductors ( Kaplar et al., 2016 ). (b) Theoretical limits of on-resistance and breakdown field of the semiconductors showing their predicted contours of BFOM ( Tsao et al More about this image found in (a) Relationship of bandgap and critical breakdown electric field for direc...
Images
Published: February 2023
FIG. 1.5 (a) Triangular electric field profile in a Schottky diode ( Baliga, 2009 ). (b) WBG and UWBG devices require less depletion width (and hence device size) to withstand the same breakdown voltage due to their high breakdown field. More about this image found in (a) Triangular electric field profile in a Schottky diode ( Baliga, 2009 )....
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Published: February 2023
FIG. 1.17 Device schematic and surface electric field (Esurf) along the vertical cutline (Ey) at the center of the anode contact for β-Ga2O3 (a) Regular Schottky diode and (b) Trench Schottky barrier diode ( Li et al., 2021 More about this image found in Device schematic and surface electric field (Esurf...
Images
Published: February 2023
FIG. 1.18 (a) Simulated electric field profile of the Trench Schottky barrier diode at breakdown voltage of 2.89 kV. (b) The electric field profile along cutline-1 shows that the peak field of 5.6 MV/cm appears at trench corners. (c) Electric field profile along the fin center (cutline 2) shows More about this image found in (a) Simulated electric field profile of the Trench Schottky barrier diode a...
Images
in High Breakdown Voltage β-Ga2O3 Schottky Diodes
> Ultrawide Bandgap β-Ga2O3 SemiconductorTheory and Applications
Published: February 2023
FIG. 8.1 Off-state electric-field profiles at breakdown of (a) punch-through and (b) non-punch-through designs. More about this image found in Off-state electric-field profiles at breakdown of (a) punch-through and (b)...
Images
in High Breakdown Voltage β-Ga2O3 Schottky Diodes
> Ultrawide Bandgap β-Ga2O3 SemiconductorTheory and Applications
Published: February 2023
FIG. 8.17 Longitudinal component of the surface electric field in an FMR-terminated SBD under reverse bias. More about this image found in Longitudinal component of the surface electric field in an FMR-terminated S...
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in High Breakdown Voltage β-Ga2O3 Schottky Diodes
> Ultrawide Bandgap β-Ga2O3 SemiconductorTheory and Applications
Published: February 2023
FIG. 8.19 Calculated practical maximum surface electric fields (Esurf) in β-Ga2O3 SBDs, defined at a maximum reverse leakage current (JR,max) of 1 or 100 mA/cm2 at 25 °C. Experimental data from the literature are also shown More about this image found in Calculated practical maximum surface electric fields (E...
Images
in High Breakdown Voltage β-Ga2O3 Schottky Diodes
> Ultrawide Bandgap β-Ga2O3 SemiconductorTheory and Applications
Published: February 2023
FIG. 8.24 Simulated electric-field profiles in a β-Ga2O3 trench SBD along a vertical cutline at the center of a fin channel [see Fig. 8.23(a) ] under a reverse bias of −1375 V by varying (a) Wfin and (b) d More about this image found in Simulated electric-field profiles in a β-Ga2O3 trench...
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