FIG. 5.1 Topics in students' understanding of electricity and magnetism. More about this image found in Topics in students' understanding of electricity and magnetism.

FIG. 13.3 Two examples of electrical circuits assembled by students during the exam. More about this image found in Two examples of electrical circuits assembled by students during the exam.

FIG. 7.2 Electricity generation, conversion, and supply for a PV system. More about this image found in Electricity generation, conversion, and supply for a PV system.

FIG. 7.3 The working mechanism of a PV cell ( Electrical A2Z ). More about this image found in The working mechanism of a PV cell ( Electrical A2Z ).

FIG. 7.2 Schematic of a coal-fired boiler-turbine electricity generation system ( Zhang et al. , 2020 ). More about this image found in Schematic of a coal-fired boiler-turbine electricity generation system ( Zh...

FIG. 5.20 (a) Schematic illustration of in situ electrical biasing TEM ( Sato et al., 2011 , 2012 ). DF-TEM image of PMN–PT and corresponding schematic drawing of domain structure (b) without an electric field, (c) under an electric field of 24.4 kV/cm, and (d) after removing the electric field ( Sato et al., 2011 ). a, b, and c denote three different MDs, and the stripes indicate lamellar-like NDs. More about this image found in (a) Schematic illustration of in situ electrical biasing T...

FIG. 5.21 (a) ADF-STEM images and (b) lattice parameter (c) maps under 0 kV/cm and ±13.8 kV/cm. (c) Relationship between Δa and electric field and (d) relationship between Δc and electric field ( Sato et al., 2020 ). Δa and Δc correspond to the difference in the lattice parameters a and c from their average at 0 kV/cm, respectively. More about this image found in (a) ADF-STEM images and (b) lattice parameter (c) maps und...

FIG. 1.4 (a) Relationship of bandgap and critical breakdown electric field for direct and indirect semiconductors ( Kaplar et al., 2016 ). (b) Theoretical limits of on-resistance and breakdown field of the semiconductors showing their predicted contours of BFOM ( Tsao et al., 2017 ). Note that the theoretical BFOM contours assume that the dopant is completely ionized, which is often not the case in real WBG and UWBG semiconductors. Hence, a modified BFOM is used to evaluate the true material case accounting incomplete dopant ionization and background compensation effects that is shown later in Fig. 1.6 . More about this image found in (a) Relationship of bandgap and critical breakdown electric field for direc...

FIG. 1.5 (a) Triangular electric field profile in a Schottky diode ( Baliga, 2009 ). (b) WBG and UWBG devices require less depletion width (and hence device size) to withstand the same breakdown voltage due to their high breakdown field. More about this image found in (a) Triangular electric field profile in a Schottky diode ( Baliga, 2009 )....

FIG. 1.17 Device schematic and surface electric field (E_surf) along the vertical cutline (E_y) at the center of the anode contact for β-Ga₂O₃ (a) Regular Schottky diode and (b) Trench Schottky barrier diode ( Li et al., 2021 ). (c) Reverse bias characteristics for a trench SBD with trench depth, d_tr = 1.55 µm and conventional SBD showing lower leakage current density and higher breakdown voltage achieved by trench SBD ( Li et al., 2021 ). More about this image found in Device schematic and surface electric field (E_surf...

FIG. 1.18 (a) Simulated electric field profile of the Trench Schottky barrier diode at breakdown voltage of 2.89 kV. (b) The electric field profile along cutline-1 shows that the peak field of 5.6 MV/cm appears at trench corners. (c) Electric field profile along the fin center (cutline 2) shows that the high electric field appears at the trench depth, d_tr = 1.1 µm, whereas the near Schottky contact regions experience a reduced surface electric field of E_surf = 0.7 MV/cm. Cutline 3 along the trench center also shows the maximum electric field located at the trench depth ( Li et al., 2021 ). More about this image found in (a) Simulated electric field profile of the Trench Schottky barrier diode a...

FIG. 8.1 Off-state electric-field profiles at breakdown of (a) punch-through and (b) non-punch-through designs. More about this image found in Off-state electric-field profiles at breakdown of (a) punch-through and (b)...

FIG. 8.17 Longitudinal component of the surface electric field in an FMR-terminated SBD under reverse bias. More about this image found in Longitudinal component of the surface electric field in an FMR-terminated S...

FIG. 8.19 Calculated practical maximum surface electric fields (E_surf) in β-Ga₂O₃ SBDs, defined at a maximum reverse leakage current (J_R,max) of 1 or 100 mA/cm² at 25 °C. Experimental data from the literature are also shown (solid for J_R,max = 1 mA/cm² and hollow for J_R,max = 100 mA/cm²). Adapted with permission from Li et al., Appl. Phys. Lett. 116 (19), 192101 (2020d). Copyright 2020 AIP Publishing LLC. More about this image found in Calculated practical maximum surface electric fields (E...

FIG. 8.24 Simulated electric-field profiles in a β-Ga₂O₃ trench SBD along a vertical cutline at the center of a fin channel [see Fig. 8.23(a) ] under a reverse bias of −1375 V by varying (a) W_fin and (b) d_tr. Reprinted with permission from Li et al., IEEE Trans. Electron Devices 67 (10), 3938–3947 (2020b). Copyright 2020 IEEE. More about this image found in Simulated electric-field profiles in a β-Ga₂O₃ trench...