FIG. 4.9 (a) DSC plot of Al doped VO₂ ( Wu et al., 2014 ) and (b) DSC plot of W-doped VO₂ ( Naik et al., 2022 ). More about this image found in (a) DSC plot of Al doped VO₂ ( Wu et al., 2014 ...

FIG. 5.7 ADF-STEM image of Pr-doped ZnO [0001] Σ49 GB and (b) inter-atomic distance map obtained from a stable atomic arrangement for the undoped GB by first-principles calculation ( Sato et al., 2009 ). The yellow open circle in (b) indicates the location of Pr segregation, as observed in (a). More about this image found in ADF-STEM image of Pr-doped ZnO [0001] Σ49 GB and (b) inter-atomic distance ...

FIG. 5.8 (a) Current–voltage characteristics of the Pr-doped ZnO bicrystal with a [0001] Σ7 GB and (b) ADF-STEM image of the GB. (c) Stable atomic arrangement and (d) defect formation energy of the GB obtained from first-principles calculation ( Sato et al., 2006 ). More about this image found in (a) Current–voltage characteristics of the Pr-doped ZnO bicrystal with a [0...

FIG. 1.6 (a) Ionized doping concentration in different semiconductors with respect to the background doping considering compensation effect of acceptor-like impurities ( Zhang and Speck, 2020 ). (b) Modified BFOM contour plot estimated from the on-resistance and breakdown field accounting ionized dopants. β-Ga₂O₃ shows the highest BFOM when material purity and dopant ionization efficiency are considered to estimate BFOM. Reproduced with permission from Zhang et al., Semicond. Sci. Technol. 35 (12), 125018. (2020). Copyright 2020 AIP Publishing LLC. More about this image found in (a) Ionized doping concentration in different semiconductors with respect t...

FIG. 2.4 (a) SYNOPICS 50 mm, Fe-doped, (010) β-Ga₂O₃ substrate, (b) rocking curve, and (c) AFM image. More about this image found in (a) SYNOPICS 50 mm, Fe-doped, (010) β-Ga₂O₃ substrate...

FIG. 2.5 SYNOPICS 50 mm, Fe-doped, (010) β-Ga₂O₃ substrate flatness (warp), and TTV maps. More about this image found in SYNOPICS 50 mm, Fe-doped, (010) β-Ga₂O₃ substrate fla...

FIG. 2.13 50-mm, Sn-doped, (001) oriented β-Ga₂O₃ substrates ( Ohba et al., 2021 ). More about this image found in 50-mm, Sn-doped, (001) oriented β-Ga₂O₃ substrates ( ...

FIG. 3.12 Electron mobility vs free carrier concentration for Si- or Ge doped β-Ga₂O₃ epitaxial films grown by MOCVD using TEGa and TMGa precursors. The films were doped with SiH₄ balanced in He or N₂ (a), GeH₄ balanced in N₂ (b), and Si₂H₆ diluted in N₂ (c). More about this image found in Electron mobility vs free carrier concentration for Si- or Ge doped β-Ga...

FIG. 3.14 SIMS stack layers and profiles for Ge-doped β-Ga₂O₃ stacks grown at various T_sub. (a) Schematic of the SIMS stack with five β-Ga₂O₃:Ge layers grown by varying the T_sub at a constant GeH₄ flow rate of 2.2 × 10⁻⁸ mol/min. (b) SIMS depth profile for Ge and Si in the stack. Partially reprinted from Alema et al., APL Mater. 9 , 091102 (2021). Copyright 2021 Authors, licensed under a Creative Commons Attribution (CC BY) license. More about this image found in SIMS stack layers and profiles for Ge-doped β-Ga₂O₃ s...

FIG. 6.7 Effect of (a) growth temperature and (b) Ga flux on Sn and Ge doping in PAMBE growth. The Ge dopants show a drop in concentration likely related to site competition between Ga and Ge. Reproduced with permission from Mauze et al., Appl. Phys. Lett. 117 (22), 222102 (2020). Copyright 2020 AIP Publishing LLC. More about this image found in Effect of (a) growth temperature and (b) Ga flux on Sn and Ge doping in PAM...

FIG. 6.11 (a) β-Ga₂O₃ lateral transistor on Fe-doped substrate where a UID buffer layer is used for separation of the channel from the substrate and (b) effect of Fe-doping on the pinch-off voltage of the transistors showing a larger positive shift is observed with thinner buffer layers due to compensation effects of channel charge from the Fe-doped substrate ( Joishi et al., 2018 ). More about this image found in (a) β-Ga₂O₃ lateral transistor on Fe-doped substrate ...

FIG. 12.7 (a) C–V extracted doping profiles for pre and post-irradiation on the same Ni/β-Ga₂O₃ Schottky diode revealing a monotonic increase in carrier compensation as a function of proton fluence. (b) DLTS spectra obtained after each proton fluence, noting the pre-irradiation DLTS scan with the E_C-0.4 eV trap (black arrow) and irradiation-induced traps E_C-0.35 eV, E_C-0.6 eV, and E_C-0.7 eV (red arrows); (c) SSPC spectra at each proton fluence point, where step heights are proportional to the concentration of each trap, and the energy levels associated with each SSPC onset are obtained from fitting the (d) optical cross section obtained from fitting the DLOS photocapacitance transient analysis to the Pässler model ( Pässler, 2004 ; and Ghadi et al., 2020b ). Each of the DLOS traps were present prior to radiation, with the E_C–2.0 eV dominating the carrier compensation, also verified using lighted C-V measurements. (d) Reproduced with permission from Ghadi et al., APL Mater. 8 (2), 021111 (2020). Copyright 2020 Author(s), licensed under a Creative Commons Attribution (CC BY) license. More about this image found in (a) C–V extracted doping profiles for pre...

FIG. 6.4 UID β-Ga₂O₃ substrate (a) C–V extracted net doping concentration and Hall carrier concentration and (b) SIMS of Si and Sn. The Si level is comparable to the net doping, whereas Sn was below the detection limit of SIMS. Reproduced with permission from Zhang et al., Appl. Phys. Lett. 108 , 052105 ( 2016 ). Copyright 2016 AIP Publishing LLC. More about this image found in UID β-Ga₂O₃ substrate (a) C–...

FIG. 4.5 Temperature dependence of carrier concentration and mobility measured by Hall for the Sn-doped film grown by MOCATAXY. Reproduced with permission from Mauze et al., Appl. Phys. Lett. 117 (22), 222102 (2020a). Copyright 2020a AIP Publishing LLC. More about this image found in Temperature dependence of carrier concentration and mobility measured by Ha...