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1-19 of 19 Search Results for
dislocation loop
Book
Series: AIPP Books, Principles
Published: March 2023
10.1063/9780735425590
EISBN: 978-0-7354-2559-0
ISBN: 978-0-7354-2556-9
Book
Series: AIPP Books, Principles
Published: March 2023
10.1063/9780735424395
EISBN: 978-0-7354-2439-5
ISBN: 978-0-7354-2436-4
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
10.1063/9780735425033_008
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
...-Ga2O3 substrates with low dislocation density, thick β-Ga2O3 drift layers with low background carrier concentration can be grown homoepitaxially for high-breakdown power applications. Most devices reported to date make use of halide vapor phase epitaxy to form the drift layer...
Book
Series: AIPP Books, Methods
Published: December 2022
10.1063/9780735425422
EISBN: 978-0-7354-2542-2
ISBN: 978-0-7354-2540-8
Book
Series: AIPP Books, Principles
Published: September 2022
10.1063/9780735425118
EISBN: 978-0-7354-2511-8
ISBN: 978-0-7354-2509-5
Book Chapter
Series: AIPP Books, Principles
Published: December 2021
10.1063/9780735422865_006
EISBN: 978-0-7354-2286-5
ISBN: 978-0-7354-2283-4
... were generated from the perfect dislocation, and Shockley dislocation loops and entanglements were observed in the second cycle. It was perceived that the quantity of the perfect dislocations in addition to the Shockley partial dislocations increased at the fourth cycle. A portion of the sixth cycle...
Book
Series: AIPP Books, Principles
Published: December 2021
10.1063/9780735422865
EISBN: 978-0-7354-2286-5
ISBN: 978-0-7354-2283-4
Images
in Structural Defects in Mg-Doped GaN: TEM Analysis
> Characterization of Defects and Deep Levels for GaN Power Devices
Published: December 2020
FIG. 4.16 (a) and (b) Cross-sectional TEM images of sample #2 obtained using g = 1 ¯ 1 ¯ 20 and g = 11 2 ¯ 0 . Images of dislocation loops labeled as A, B, and C are narrower in (a) than in (b). (c) and (d) Diffraction vector g , excitation error s , and Ewald sphere in (a) and (b). Clockwise (c) or counterclockwise (d) rotation of diffracting planes brings them into Bragg condition. (e) and (f) Schematic of incident electron beam and intrinsic dislocation loop in TEM specimen. Solid lines depict GaN a-planes, and dislocation loop is viewed edge-on. Circular arrows indicate sense of local lattice plane rotations at loop edges. Diagrams in lower part of figure depict strong contrast that appears inside dislocation loop in (e), while strong contrast appears outside of dislocation loop in (f). Reproduced with permission from K. Iwata et al., J. Appl. Phys. 127 (10), 105106 (2020). Copyright 2020 AIP Publishing. More about this image found in (a) and (b) Cross-sectional TEM images of sample #2 obtained using g = ...
Images
in Structural Defects in Mg-Doped GaN: TEM Analysis
> Characterization of Defects and Deep Levels for GaN Power Devices
Published: December 2020
FIG. 4.17 (a) HAADF-STEM image of bright dot defect in sample #2. Numbers of Ga atomic column images are doubled in each Ga plane in defect. (b) Schematic of vacancy disk on a-plane viewed edge-on (left). Atoms on both sides of vacancy disk move by 1 6 [ 11 2 ¯ 0 ] to form dislocation loop (right). 1 6 [ 11 2 ¯ 0 ] movement of atoms results in 1 6 [ 11 2 ¯ 0 ] movement of a-planes around dislocation loop. Inset in (a) shows simulated image of model in which matrix and 1 6 [ 11 2 ¯ 0 ] -shifted structure in (b) are stacked in projection direction. Schematic in (b) shows atomic positions of Ga in model used in image simulation. Reproduced with permission from K. Iwata et al., J. Appl. Phys. 127 (10), 105106 (2020). Copyright 2020 AIP Publishing. More about this image found in (a) HAADF-STEM image of bright dot defect in sample #2. Numbers of Ga atomi...
Book Chapter
Series: AIPP Books, Methods
Published: December 2020
10.1063/9780735422698_004
EISBN: 978-0-7354-2269-8
ISBN: 978-0-7354-2270-4
... dispersive X-ray spectroscopy (EDS) dislocation loop vacancies interstitials Introduction Controlling the doping level of GaN has been one of the main challenges in the development of GaN-based devices. After the breakthrough by Akasaki, Amano, and Nakamura, 1 , 2 magnesium (Mg) has been...
Book
Series: AIPP Books, Methods
Published: December 2020
10.1063/9780735422698
EISBN: 978-0-7354-2269-8
ISBN: 978-0-7354-2270-4
Book
Series: AIPP Books, Perspectives
Published: May 2021
10.1063/9780735423152
EISBN: 978-0-7354-2315-2
ISBN: 978-0-7354-2312-1
Book Chapter
Series: AIPP Books, Methods
Published: December 2020
10.1063/9780735422698_005
EISBN: 978-0-7354-2269-8
ISBN: 978-0-7354-2270-4
... domains formed through post-implantation annealing. This combinational approach also provided a direct evidence of Mg atoms diffusing along threading dislocations in the p-n junction of GaN; such information is useful to understand the mechanism of leakage current in the junction. Combined use of APT...
Book
Series: AIPP Books, Methods
Published: December 2020
10.1063/9780735422414
EISBN: 978-0-7354-2241-4
ISBN: 978-0-7354-2238-4
Book Chapter
Series: AIPP Books, Archive
Published: March 2013
10.1063/9780735420755_002
EISBN: 978-0-7354-2075-5
ISBN-10: 1-931024-15-4
ISBN: 978-1-931024-15-0
... the external magnetic field is removed. However, there is enough resistance to the motion of walls (the resistance comes from the presence of strains, impurities, and dislocations in the metallic crystal) between adjacent domains to prevent a complete return to the original orientations of the domains. A small...
Book
Series: AIPP Books, Archive
Published: March 2013
10.1063/9780735420755
EISBN: 978-0-7354-2075-5
ISBN-10: 1-931024-15-4
ISBN: 978-1-931024-15-0
Book Chapter
Series: AIPP Books, Archive
Published: January 2003
10.1063/9780735422667_008
EISBN: 978-0-7354-2266-7
ISBN-10: 0-7354-2278-8
ISBN: 978-0-7354-2278-0
... film loop depicting observations while moving along pole-lined road at ever increasing speed. Also includes effects of time dilation and Penrose-Terrell rotation. Produced by Educational Research Center, MIT, Cambridge, MA 02139 and distributed by Educational Development Center, Newton, MA 02160. Ease...
Book Chapter
Book: Teaching About Magnetism
Series: AIPP Books, Archive
Published: January 1996
10.1063/9780735421387_002
EISBN: 978-0-7354-2138-7
ISBN: 978-0-917853-65-4
... distributions that works easily in a number of special cases. For the long straight wire mentioned above, Ampere’s Law would have us form a closed circular loop around and centered on the wire. The field will be tangent at every point to every such circle, and it will go around the circle in a direction...
Book
Series: AIPP Books, Archive
Published: January 1996
10.1063/9780735421387
EISBN: 978-0-7354-2138-7
ISBN: 978-0-917853-65-4