FIG. 1.12 (a) PV array configuration under PSC (D1 = bypass diode, D2 = blocking diode). (b) P–V curves of each group. (c) The P–V curve of the whole array ( Ramli et al., 2017 ). More about this image found in (a) PV array configuration under PSC (D1 = bypass diode, D2 = blocking diod...

FIG. 16.6 Video illustrating the use of external cavity diode lasers in atomic physics (from Hardman et al., 2014 ). More about this image found in Video illustrating the use of external cavity diode lasers in atomic physic...

FIG. 1.2 Equivalent circuit of (a) the ideal one-diode PV cell model, (b) and (c) simplified one-diode models, (d) practical one-diode model, (e) double-diode model (DDM), (f) modified double-diode model (MDDM), (g) reverse double-diode model, and (h) three-diode model (TDM) ( Abbassi et al., 2019 ). More about this image found in Equivalent circuit of (a) the ideal one-diode PV cell model, (b) and (c) si...

FIG. 1.3 Current–voltage characteristics of (a) ideal power diode and (b) practical power diodes ( Baliga, 2009 ). More about this image found in Current–voltage characteristics of (a) ideal power diode and (b) practical ...

FIG. 1.5 (a) Triangular electric field profile in a Schottky diode ( Baliga, 2009 ). (b) WBG and UWBG devices require less depletion width (and hence device size) to withstand the same breakdown voltage due to their high breakdown field. More about this image found in (a) Triangular electric field profile in a Schottky diode ( Baliga, 2009 )....

FIG. 1.13 Schematic of basic Schottky diode structures from MOCVD-grown β-Ga₂O₃ (a) vertical diode and (b) lateral diode. Reproduced with permission from Zhang et al., APL Mater. 7 (2), 022506 ( 2019 ). Copyright 2019 AIP Publishing LLC. More about this image found in Schematic of basic Schottky diode structures from MOCVD-grown β-Ga₂...

FIG. 1.18 (a) Simulated electric field profile of the Trench Schottky barrier diode at breakdown voltage of 2.89 kV. (b) The electric field profile along cutline-1 shows that the peak field of 5.6 MV/cm appears at trench corners. (c) Electric field profile along the fin center (cutline 2) shows that the high electric field appears at the trench depth, d_tr = 1.1 µm, whereas the near Schottky contact regions experience a reduced surface electric field of E_surf = 0.7 MV/cm. Cutline 3 along the trench center also shows the maximum electric field located at the trench depth ( Li et al., 2021 ). More about this image found in (a) Simulated electric field profile of the Trench Schottky barrier diode a...

FIG. 1.19 (a) MIS β-Ga₂O₃ diode with extreme-κ dielectric BaTiO₃, and the band profile at large reverse bias in (b) conventional Schottky diodes showing electron tunneling effects through thin triangular barrier (c) in BaTiO₃ MIS diodes showing that the flat conduction band profile in BaTiO₃ can effectively block tunneling electrons. The E_C, E_V, and E_f indicate the conduction band, valence band, and Fermi level in the band diagram, respectively ( Xia et al., 2019 ). More about this image found in (a) MIS β-Ga₂O₃ diode with extreme-κ dielectric BaTiO...

FIG. 8.2 Equipotential contours of a reverse-biased Schottky diode showing 2-D field crowding at the edge of the Schottky contact. More about this image found in Equipotential contours of a reverse-biased Schottky diode showing 2-D field...

FIG. 8.3 Conception of the field-plate termination technique for a vertical diode structure, implemented here in a p–n junction diode. The surface electric field at the edge of the junction is modulated by an externally applied gate voltage (V_G). Reprinted with permission from Grove et al., IEEE Trans. Electron Devices 14 (3), 157–162 (1967). Copyright 1967 IEEE. More about this image found in Conception of the field-plate termination technique for a vertical diode st...

FIG. 8.16 Conception of the FMR termination technique for a vertical diode structure, implemented here in a p–n junction diode: (a) cross-sectional structure and (b) qualitative potential distribution at reverse bias. Reprinted with permission from Yilmaz and Van Dell, IEEE Electron Device Lett. 6 (11), 600–601 (1985). Copyright 1985 IEEE. More about this image found in Conception of the FMR termination technique for a vertical diode structure,...

FIG. 13.3 Diode I_F–V_F illustrating dynamic resistance R_d. More about this image found in Diode I_F–V...

FIG. 1.16 (a) Vertical β-Ga₂O₃ Schottky diodes with field plate, (b) corresponding electric field profile showing the peak field (in red) redistributed by field plate ( Konishi et al., 2017 ), and (c) bevel field plate Schottky diodes with sidewall angles of 55.7° ( Joishi et al., 2018 ). More about this image found in (a) Vertical β-Ga₂O₃ Schottky diodes with field plate...