FIG. 3.14 Structure of typical III-nitride LEDs. Device operation depends on the lateral current injection. The buffer layer is grown on a substrate at low temperatures to accommodate high lattice mismatch. (a) InGaN MQW-based LEDs for blue/green/yellow LEDs. AlGaN-based electron blocking layer is used to prevent injected electrons from escaping the active region. (b) AlGaN MQW-based UV LEDs. p-GaN is grown on p-AlGaN to prevent oxidation of aluminum. More about this image found in Structure of typical III-nitride LEDs. Device operation depends on the late...

FIG. 3.18 Schematic of typical Ga-faced HEMT device structure. A nucleation layer is grown on the substrate for accommodating lattice mismatch. 2DEG is formed at the interface of the AlGaN/GaN interface on the GaN side. Thin GaN is formed at the top to make better contact. More about this image found in Schematic of typical Ga-faced HEMT device structure. A nucleation layer is ...

FIG. 4.4 Cross section of a CMOS device fabricated on a p-type silicon substrate. More about this image found in Cross section of a CMOS device fabricated on a p-type silicon substrate.

FIG. 4.5 Cross section of CMOS-MEMS integrated device in the recess trench using pre-CMOS ( Smith et al. 1995 ). Reproduced with permission from Qu, Micromachines 7 (1), 1–21 (2016). Copyright 2016 MDPI. More about this image found in Cross section of CMOS-MEMS integrated device in the recess trench using pre...

FIG. 9.8 Cross-sectional scheme of the electrostatic energy harvesting device with four wafer stacks, reported by Wang et al. Reproduced with permission from Wang and Hansen, Sensors Act. A: Phys. 211 , 131–137 (2014). Copyright 2014 Elsevier. More about this image found in Cross-sectional scheme of the electrostatic energy harvesting device with f...

FIG. 9.10 (a) Semi-integrated electromagnetic MEH device including bulk NdFeB magnet reported in Mallick et al. (2017). Reproduced with permission from Mallick et al., Sens. Actuators A 264 , 247–259 (2017b). Copyright 2017 Elsevier. (b) Vision of high NPD MEMS EM MEH devices enabled by micro-/nano-magnetics as given by Roy et al. (2019) . Reproduced with permissionfrom Roy et al., IEEE Trans. Magn. 55 (7), (2019). Copyright 2019 IEEE. More about this image found in (a) Semi-integrated electromagnetic MEH device including bulk NdFeB magnet ...

FIG. 5.6 Wear in MEMS devices. (a) Wear debris in microengines (Courtesy Sandia National Laboratories, SUMMiT Technologies, www.sandia.gov/mstc ). (b) Wear debris in drive gears (Courtesy Sandia National Laboratories, SUMMiT Technologies, www.sandia.gov/mstc ). More about this image found in Wear in MEMS devices. (a) Wear debris in microengines (Courtesy Sandia Nati...

FIG. 6.31 3D schematic of (a) cantilever and (b) bridge-based MEMS devices ( Bansal et al., 2021 ). More about this image found in 3D schematic of (a) cantilever and (b) bridge-based MEMS devices ( Bansal ...

FIG. 1.9 Head-worn display device ( Platonov et al., 2006 ). More about this image found in Head-worn display device ( Platonov et al., 2006 ).