FIG. 6.8 (a) Measured power and normal operation limits, (b) fault detection based on the operation limit approach. More about this image found in (a) Measured power and normal operation limits, (b) fault detection based o...

FIG. 6.8 Sn dopant level (a) detection from temperature-dependent Hall measurements showing the donor energy level at 77 meV ( Mauze et al., 2020 ) and (b) comparison of Sn and Si in terms of available free carrier from Hall measurements vs SIMS concentration showing a drop of carrier concentration from Sn at high doping levels ( Baldini et al., 2016 ). More about this image found in Sn dopant level (a) detection from temperature-dependent Hall measurements ...

FIG. 6.10 Fe dopant level detection (a) DLTS studies revealing a defect state at E2 = E_C–0.8 eV that was quite insensitive to radiation indicating an extrinsic source and (b) the E2 level tracks well to increase in Fe concentration from SIMS. Reproduced with permission from Ingebrigtsen et al., Appl. Phys. Lett. 112 , 042104 (2018). Copyright 2018 AIP Publishing LLC. More about this image found in Fe dopant level detection (a) DLTS studies revealing a defect state at

FIG. 1.11 (a) Shading, (b) soiling and dust accumulation, (c) HS damaged on solar cells, and (d) detected HS phenomena on a PVM using infrared equipment ( Mellit et al., 2018 ). More about this image found in (a) Shading, (b) soiling and dust accumulation, (c) HS damaged on solar cel...

FIG. 6.5 Silicon dopant energy level detected from (a) temperature-dependent Hall concentration fitted with two-donor model showing a shallow donor level at 40 meV and deep donor level at 150 meV ( Feng et al., 2020 ). (b) The secondary level was also observed from admittance spectroscopy (capacitance–frequency at different temperatures). The arrow indicates the presence of inflection point in the C–f plot associated with the deep trap emission that causes dispersion at higher frequencies ( Neal et al., 2017 ). More about this image found in Silicon dopant energy level detected from (a) temperature-dependent Hall co...

FIG. 5.2 A schematic of a full Wheatstone bridge circuit with four variable resistors. These resistors represent the piezoresistors mounted on the diaphragm of a MEMS pressure sensor. When the sensor diaphragm remains undeformed, the bridge is balanced, and no signal is detected between points 1 and 3. However, in the presence of an external pressure field, the diaphragm of the sensor deforms, and the resistances of the piezoresistors change. This creates an imbalance in the circuit resulting in a proportional voltage change across the bridge (between points 1 and 3), which is then measured to calculate the pressure changes (Sheela et al.). More about this image found in A schematic of a full Wheatstone bridge circuit with four variable resistor...