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deep-level transient spectroscopy (DLTS)
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1-12 of 12 Search Results for
deep-level transient spectroscopy (DLTS)
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
10.1063/9780735425033_012
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
... techniques can be employed; however, in this section, the focus is on measurements such as deep level transient spectroscopy (DLTS), deep level optical spectroscopy (DLOS), and more general forms of photo-capacitance (PC) spectroscopy due to their ability to provide both quantitative information...
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
10.1063/9780735425033_006
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
... (CBM) when incorporated on the GaII site ( Wang et al., 2020 ). This level has been associated with the E3 level identified through a combination of deep level transient spectroscopy (DLTS), steady-state photo-capacitance (SSPC) spectroscopy, and secondary ion mass spectrometry...
Book Chapter
Series: AIPP Books, Methods
Published: December 2020
10.1063/9780735422698_002
EISBN: 978-0-7354-2269-8
ISBN: 978-0-7354-2270-4
... are reviewed. Quantitative accuracy of deep-level transient spectroscopy (DLTS) technology is discussed. The isothermal method allows a quick measurement and is useful to characterize trap states for the case that a temperature scan causes reaction of defects or the occupancy condition for each filling pulse...
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
10.1063/9780735425033_011
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
...-pulsed I–V measurements were performed to understand the effect of trap occupation on threshold voltage and on-resistance. Gate-controlled constant drain current deep level transient spectroscopy (GC-DLTS) measurements were used to understand the density, energy level and cross section of each trap level...
Book Chapter
Series: AIPP Books, Methods
Published: December 2020
10.1063/9780735422698_frontmatter
EISBN: 978-0-7354-2269-8
ISBN: 978-0-7354-2270-4
... discussion herein. A deep level is a charged state formed by a defect and is directly related to the electrical properties of a device. In the case of GaN, which has a large bandgap, it is important to pay special attention to methods for assessment of deep levels. Deep-level transient spectroscopy (DLTS...
Book Chapter
Series: AIPP Books, Methods
Published: December 2020
10.1063/9780735422698_003
EISBN: 978-0-7354-2269-8
ISBN: 978-0-7354-2270-4
... to the calculated energy levels of the nitrogen vacancy (VN) and the interstitial (NI). Finally, deep levels compensating carriers in n-type and p-type GaN layers are extracted. deep levels deep-level transient spectroscopy (DLTS) electron trap hole trap capture cross...
Book
Series: AIPP Books, Methods
Published: December 2020
10.1063/9780735422698
EISBN: 978-0-7354-2269-8
ISBN: 978-0-7354-2270-4
Book Chapter
Series: AIPP Books, Methods
Published: December 2020
0
EISBN: 978-0-7354-2269-8
ISBN: 978-0-7354-2270-4
... , “ Isothermal capacitance transient spectroscopy for determination of deep level parameters ,” Jpn. J. Appl. Phys. 19 ( 6 ), L335 – L338 ( 1980 ). 10.1143/JJAP.19.L335 14 Y. Tokuda , “ DLTS studies of defects in n-GaN ,” ECS Trans. 75 ( 4 ), 39 – 49 ( 2016 ). 10.1149...
Book Chapter
Series: AIPP Books, Methods
Published: December 2020
0
EISBN: 978-0-7354-2269-8
ISBN: 978-0-7354-2270-4
.... Appl. Phys. 59 ( SA ), SA0804-1 – SA0804-14 ( 2020 ). 10.7567/1347-4065/ab4610 10 Y. Tokuda , “ Traps in MOCVD n-GaN studied by deep level transient spectroscopy and minority carrier transient spectroscopy ,” in Int. Conf. Compound Semiconductor Manufacturing...
Book Chapter
Series: AIPP Books, Methods
Published: December 2020
10.1063/9780735422698_008
EISBN: 978-0-7354-2269-8
ISBN: 978-0-7354-2270-4
...-induced traps using capacitance deep-level transient spectroscopy (C-DLTS). In the case that hard etching conditions are applied to fabricate a test specimen with deep damage, the SBD formed on the etched surface typically shows a remarkable leakage current, and therefore the as-etched sample...
Book Chapter
Series: AIPP Books, Methods
Published: December 2020
10.1063/9780735422698_001
EISBN: 978-0-7354-2269-8
ISBN: 978-0-7354-2270-4
.... 14 In addition to extended defects such as threading dislocations, point defects that generate deep levels in the bandgap of GaN have also been studied for some time now. The application of deep-level transient spectroscopy (DLTS) to the analysis of defects in GaN was first reported by Hacke...
Book Chapter
Series: AIPP Books, Methods
Published: December 2020
10.1063/9780735422698_005
EISBN: 978-0-7354-2269-8
ISBN: 978-0-7354-2270-4
... of point and extended defects. Therefore, detailed characterization of these defects as well as their impact on device performance needs to be carried out. Many attempts have been made in this direction using various experimental techniques such as deep-level transient spectroscopy (DLTS), 8 , 9...