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deep levels

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<span class="search-highlight">Deep</span> <span class="search-highlight">levels</span> in Al<sub>x</sub>Ga<sub>1-x</sub>N as a function of Al composit...
Published: February 2023
FIG. 1.7 Deep levels in AlxGa1-xN as a function of Al composition showing shallow to deep level transition of donor levels as the material transforms from WBG GaN to UWBG AlxGa1-xN ( Kamyczek et al., 2012 ). More about this image found in Deep levels in AlxGa1-xN as a function of Al composit...
Book Chapter
Series: AIPP Books, Methods
Published: December 2020
10.1063/9780735422698_002
EISBN: 978-0-7354-2269-8
ISBN: 978-0-7354-2270-4
...Narita, T. and Tokuda, Y. (2020), “Methods of analyzing deep levels in GaN,” in Narita, T. and Kachi, T. (eds.), Characterization of Defects and Deep Levels for GaN Power Devices, Melville, New York: AIP Publishing, pp. 2-1–2-22 Analytical methods for investigating deep levels in GaN...
Book Chapter
Series: AIPP Books, Methods
Published: December 2020
10.1063/9780735422698_003
EISBN: 978-0-7354-2269-8
ISBN: 978-0-7354-2270-4
...Narita, T. and Tokuda, Y. (2020), “Deep levels in GaN,” in Narita, T. and Kachi, T. (eds.), Characterization of Defects and Deep Levels for GaN Power Devices, Melville, New York: AIP Publishing, pp. 3-1–3-36 Deep levels in GaN are summarized. E1 and E3 electron traps at the respective...
Book
Book Cover Image
Series: AIPP Books, Methods
Published: December 2020
10.1063/9780735422698
EISBN: 978-0-7354-2269-8
ISBN: 978-0-7354-2270-4
Images
Schematic diagram of the behavior of dopants or impurities that act as (a) ...
Published: February 2023
FIG. 6.1 Schematic diagram of the behavior of dopants or impurities that act as (a) shallow donors, (b) shallow acceptors, or (c) introduce deep levels that may change occupancy depending on the position of the Fermi level (εF). Ga2O3 has been shown to exhibit a number of shallow donor candidates as in (a) and deep levels as in (c) that may act as donors and/or acceptors, but no shallow acceptors as in (b) due to fundamental limitations of the electronic structure. More about this image found in Schematic diagram of the behavior of dopants or impurities that act as (a) ...
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The <span class="search-highlight">deep</span> donor <span class="search-highlight">level</span> <em>E<sub>d</sub></em><sub>2</sub> at ∼
Published: February 2023
FIG. 6.6 The deep donor level Ed2 at ∼EC–0.12 eV (a) increases with Si doping in β-Ga2O3 ( Ghadi et al., 2020a ) and (b) associated effect of Ed2 level with an estimated increase of on-resistance due to incomplete ionization during forward bias operation of β-Ga2O3 Schottky diodes ( Neal et al., 2017 ). More about this image found in The deep donor level Ed2 at ∼
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
0
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
... resistive GaN doped with C and Si ,” Phys. Status Solidi C   2 ( 7 ), 2411 – 2414 ( 2005a ). 10.1002/pssc.200461594 Armstrong , A. , Arehart , A. R. , and Ringel , S. A. , “ A method to determine deep level profiles in highly compensated, wide band gap semiconductors ,” J. Appl. Phys...
Images
Silicon dopant energy <span class="search-highlight">level</span> detected from (a) temperature-dependent Hall co...
Published: February 2023
FIG. 6.5 Silicon dopant energy level detected from (a) temperature-dependent Hall concentration fitted with two-donor model showing a shallow donor level at 40 meV and deep donor level at 150 meV ( Feng et al., 2020 ). (b) The secondary level was also observed from admittance spectroscopy (capacitance–frequency at different temperatures). The arrow indicates the presence of inflection point in the Cf plot associated with the deep trap emission that causes dispersion at higher frequencies ( Neal et al., 2017 ). More about this image found in Silicon dopant energy level detected from (a) temperature-dependent Hall co...
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
10.1063/9780735425033_006
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
... p-type conductivity of β-Ga2O3 due to formation of self-trapped holes and polarons will be discussed. With the theoretical background provided, the reader will then be introduced to experimental demonstrations of shallow and deep level formation by the n-type dopants (Si, Ge...
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
0
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
.... , “ Deep level study of chlorine-based dry etched β-Ga2O3 ,” J. Appl. Phys.   130 ( 2 ), 025701 ( 2021 ). 10.1063/5.0050416 Baldini , M. , Albrecht , M. , Fiedler , A. , Irmscher , K. , Schewski , R. , and Wagner , G. , “ Editors’ choice—Si- and Sn...
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
10.1063/9780735425033_012
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
... calculations for oxygen vacancies presented in Fig. 12.5(a) predict deep levels that, although having a donor-like characteristic, i.e., possessing a +1/0 charge state transition, are too deep to contribute electrons to the conduction band in n-type β-Ga2O3 ( Varley et al...
Book Chapter
Series: AIPP Books, Principles
Published: March 2023
0
EISBN: 978-0-7354-2559-0
ISBN: 978-0-7354-2556-9
.... , Lim , H. F. , Chi , D. J. , Liu , W. , and Tripathy , S. , “ Identification of deep levels in GaN associated with dislocations ,” J. Phys. Condens. Matter   16 , 6305 – 6315 ( 2004 ). 10.1088/0953-8984/16/34/027 Stringfellow , G. B. , “ The importance of lattice mismatch...
Book Chapter
Series: AIPP Books, Professional
Published: March 2023
10.1063/9780735425514_016
EISBN: 978-0-7354-2551-4
ISBN: 978-0-7354-2548-4
... for students' deep understanding. There is only one paper focused solely on the multi-cultural representations in the physics textbooks, together with the other two papers that mentioned ethical issues along with gender bias. Montgomery and Kumar (2021) examined three textbooks at the university level, which...
Book Chapter
Series: AIPP Books, Professional
Published: March 2023
10.1063/9780735425477_022
EISBN: 978-0-7354-2547-7
ISBN: 978-0-7354-2544-6
..., that students progressed from understanding sources, then transformations, and then conservation. The authors report that few students exhibited a deep understanding of conservation and that their level of knowledge integration was generally “mediocre,” and they note that energy conservation items are the most...
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
0
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
... irradiation on conductivity and deep level defects in β-Ga2O3 ,” APL Mater.   7 , 022510 ( 2019 ). 10.1063/1.5054826 Janowitz , C. , Scherer , V. , Mohamed , M. , Krapf , A. , Dwelk , H. , Manzke , R.   , “ Experimental electronic structure...
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
10.1063/9780735425033_001
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
... (AlGaN, AlInN) ( Van de Walle, 1998 ; and Kamyczek et al., 2012 ). Hence, the UWBG semiconductors typically suffer from poor material conductivity with incomplete dopant ionization and minimal free carriers available. FIG. 1.7 Deep levels in AlxGa1-xN as a function of Al...
Book Chapter
Series: AIPP Books, Professional
Published: March 2023
10.1063/9780735425514_018
EISBN: 978-0-7354-2551-4
ISBN: 978-0-7354-2548-4
... be, e.g., fundamental geometric or arithmetic conceptions. Mathematics is developed either as descriptions of these principles or as a result of them, which at a very fundamental level shape our experience of reality. In this sense, mathematics itself has deep roots in the physical world, so...
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
10.1063/9780735425033_010
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
... on the creation of chemically induced deep levels by implanting ions that result in mid-gap electronic levels in the β-Ga2O3. Here, the implants are usually incorporated into crystal lattice sites, thus making annealing procedures necessary. This compensation effect is thermally stable under...
Book Chapter
Series: AIPP Books, Professional
Published: March 2023
10.1063/9780735425477_introduction
EISBN: 978-0-7354-2547-7
ISBN: 978-0-7354-2544-6
... environments and tools, and students’ intellectual, social, and personal development. While growth and diversification represent progress, they also present challenges. It is no longer possible for any individual to be aware of both seminal and pioneering work across PER, and to have a sufficiently deep grasp...
Book Chapter
Series: AIPP Books, Professional
Published: March 2023
10.1063/9780735425712_introduction
EISBN: 978-0-7354-2571-2
ISBN: 978-0-7354-2568-2
..., they also present challenges. It is no longer possible for any individual to be aware of both seminal and pioneering work across PER and to have a sufficiently deep grasp of methodologies to evaluate the trustworthiness of claims arising from distant areas. In some quarters, there is a feeling...