Search Results for crystallographic

... a mirror plane, one can identify 32 crystal classes or crystallographic point groups and can define transformation operators for these crystallographic symmetry elements ( Newnham, 2005 ; Malgrange et al., 2014 ; and Lovett, 2018 ). We generally use mathematical objects called tensors...

... applications. In the following chapters, the strain effect on tuning the metal insulator transition and stress change across the phase transition by taking VO₂ as a model systems for correlated oxides that show metal insulator transition will be discussed. Crystallographic Aspects and Band Structure...

... of the crystallographic transition in VO₂ ,” J. Solid State Chem.   3 , 490 – 500 ( 1971 ). 10.1016/0022-4596(71)90091-0 Gu , Y. , Cao , J. , Wu , J. , and Chen , L. Q. , “ Thermodynamics of strained vanadium dioxide single crystals ,” J. Appl. Phys.   108 , 1 – 7 ( 2010...

... obtained from each layer matches the BCZT and CFO phases ( Venkata Ramana et al., 2016 ). The interface between BCZT/CFO and CFO/BCZT has an epitaxial registry with crystallographically related orientation, which was confirmed by inverse FFT analysis carried out using a Gatan digital micrograph...

..., P₁ = P₂ = P₃ = 0. On the other hand, there can exist several ferroelectric phases below T_c, each defined by a unique polar state with lower crystallographic symmetry than the paraelectric phase. For example, six unique polar states...

... Bordet , P. , Chaillout , C. , Marezio , M. , Huang , Q. , Santoro , A. , Cheong , S. W.   et al. , “ Structural aspects of the crystallographic-magnetic transition in LaVO₃ around 140 K ,” J. Solid State Commun.   106 , 253 – 270 ( 1993 ). 10.1006/jssc.1993.1285...

...] crystallographic direction, as shown in Fig. 5.11(b) . Linear behavior occurs with the incoherent specific interface of all series. The figure demonstrates that the non-coherent interface between the nanoparticles and the YBCO matrix is the controlling parameter for the nanostrain generation. The nanostrain can...

... with the intensity ratio approximately 1:3. However, the DyFe_1.95 (x = 0) exhibits a single six line spectrum for the Laves phase ( Liu et al., 2007 ). A simple six line spectra indicate that the EMD lies along [100] crystallographic direction and all the iron atoms in the crystal...

... , O. K. , Jayapandian , J. , and Prabakar , K. , “ Measure laser power with a modified MEMS pressure sensor ,” see https://tinyurl.com/y8d7wvba . Skenes , K. , Kumar , A. , Prasath , R. G. R. , and Danyluk , S. , “ Crystallographic orientation identification...

... Bordet , P. , Chaillout , C. , Marezio , M. , Huang , Q. , Santoro , A. , Cheong , S. W.   et al. , “ Structural aspects of the crystallographic-magnetic transition in LaVO₃ around 140 K ,” J. Solid State Commun.   106 , 253 – 270 ( 1993 ). 10.1006/jssc.1993.1285...

... ions, a slightly hydrogen-rich flame was required. For crystals grown using this technique, the growth axis of the boule lies in the (100) plane. The growth axis was often parallel to the crystallographic b axis, but sometimes deviated by large angles, giving rise to boules with elliptical rather than...

... . Skenes , K. , Kumar , A. , Prasath , R. G. R. , and Danyluk , S. , “ Crystallographic orientation identification in multicrystalline silicon wafers using NIR transmission intensity ,” J. Electron. Mater.   47 ( 2 ), 1030 – 1037 ( 2018 ). 10.1007/s11664-017-5982-y Snider , M...

... desorption during growth is reviewed along with its implications for growth on various crystallographic orientations of β-Ga₂O₃, with the (010) orientation showing the most promise for conventional MBE growth. Indium catalyzed growth in MBE is compared with conventional MBE growth...

... and O_si) in Ga₂O₃ are shown in Fig. 5.2 ( Ingebrigtsen et al., 2019 ). Oxygen vacancies on the various crystallographic sites are deep donors with the ε(+ 2/0) transitions falling between ∼1.4 and 2.6 eV below the conduction-band minimum (CBM), with the levels...

... the process [Fig. 9.8(a) ]. Among them, the orientation roughly aligned with [−102] direction yields the highest and over 1:40 aspect ratio, which is the greatest among all published β-Ga₂O₃ vertical structures. This strong crystallographic dependence of etching could be a result...

... crystallographically distinct Ga sites, tetrahedral Ga_I and octahedral Ga_II, as well as the three distinct O sites, or occupy a number of possible interstitial sites. The O sites exhibit a three-fold coordination for the O_I and O_II, and tetrahedral coordination...

... contains 20 atoms (8 Ga and 12 O) in four formula units, each unit containing two Ga and three O sites ( He et al., 2006a ; and Onuma et al., 2014 ). The two Ga sites, Ga_I and Ga_II, are crystallographically inequivalent, being tetrahedrally and octahedrally...