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carrier compensation

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(a) <em>C</em>–<em>V</em> extracted doping profiles for pre...
Published: February 2023
FIG. 12.7 (a) CV extracted doping profiles for pre and post-irradiation on the same Ni/β-Ga2O3 Schottky diode revealing a monotonic increase in carrier compensation as a function of proton fluence. (b) DLTS spectra obtained after each proton fluence, noting the pre-irradiation DLTS scan with the EC-0.4 eV trap (black arrow) and irradiation-induced traps EC-0.35 eV, EC-0.6 eV, and EC-0.7 eV (red arrows); (c) SSPC spectra at each proton fluence point, where step heights are proportional to the concentration of each trap, and the energy levels associated with each SSPC onset are obtained from fitting the (d) optical cross section obtained from fitting the DLOS photocapacitance transient analysis to the Pässler model ( Pässler, 2004 ; and Ghadi et al., 2020b ). Each of the DLOS traps were present prior to radiation, with the EC–2.0 eV dominating the carrier compensation, also verified using lighted C-V measurements. (d) Reproduced with permission from Ghadi et al., APL Mater. 8 (2), 021111 (2020). Copyright 2020 Author(s), licensed under a Creative Commons Attribution (CC BY) license. More about this image found in (a) CV extracted doping profiles for pre...
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(a) Shows the <span class="search-highlight">carrier</span> removal and total trap concentrations as a function o...
Published: February 2023
FIG. 12.8 (a) Shows the carrier removal and total trap concentrations as a function of fluence to directly compare both the carrier removal and trap introduction rates, revealing the close agreement between the two. (b) and (c) Show the individual trap introduction as a function of fluence to identify the states that are most strongly increasing in concentration due to the proton damage and therefore are likely to be the main compensating defects causing the carrier reduction. (d) Shows the relative introduction rates for each trap more clearly on a linear scale with the dominating compensating center at EC-2.0 eV responsible for ∼75% of the introduced compensators (McGlone et al., 2022). More about this image found in (a) Shows the carrier removal and total trap concentrations as a function o...
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
10.1063/9780735425033_012
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
... such as carrier compensation. The analogous trend of increasing bandgap resulting in higher displacement energies ( Corbett and Bourgoin, 1975 ) is shown in Fig. 12.2(b) , with the β-Ga2O3 data point consistent with reported individual atomic displacement of 25 eV and 28 eV for Ga and O...
Book Chapter
Series: AIPP Books, Principles
Published: March 2023
10.1063/9780735425590_003
EISBN: 978-0-7354-2559-0
ISBN: 978-0-7354-2556-9
... high carrier mobility (∼2000 cm2/V-s for carrier density of n s ~ 1.3 × 10 12 cm − 2 ( Gaska et al., 1999 ). On the other hand, for HEMT with N-face surface as growth direction [Fig. 3.19(b) ], holes can accumulate to compensate for positive...
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
10.1063/9780735425033_003
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
... yielded an ∼0.1% compensation of donors, the lowest ever reported for any ultra-wideband gap semiconductor (UWBG) material ( Seryogin et al., 2020 ). Similarly, Fig. 3.1(b) compares the LT mobility for MOCVD-grown β-Ga2O3 films with the best available data for 4H-SiC...
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
10.1063/9780735425033_006
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
... carrier concentration achieved with lower Sn contents. A possible reason is the formation of acceptor defect-complex by Sn at high concentration that compensates its donor carriers itself, creating a self-compensation process ( Mauze et al., 2020 ). Nevertheless, the flexibility of Sn doping...
Book Chapter
Series: AIPP Books, Professional
Published: March 2023
10.1063/9780735425477_004
EISBN: 978-0-7354-2547-7
ISBN: 978-0-7354-2544-6
... rather than with compensation Duit (1986) If energy is conserved, it cannot change its form during a transformation process Black and Solomon (1983) FIG. 4.1 Black board from one of Richard Feynman's lectures. Recreated with permission from Feynman et al., The Feynman...
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
10.1063/9780735425033_001
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
... of the donors contribute to the ionized electron concentration (n < Nd) as discussed later in Sec. 1.3.2. Moreover, the background acceptors present in the semiconductor can also compensate dopants and reduce the available mobile carriers. Hence, to reflect the practical material...
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
10.1063/9780735425033_010
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
...-temperature annealing in N2 ( Wong et al., 2018 ). For both dopants, the authors found evidence of reliable current blocking and background carrier compensation in bulk n-type β-Ga2O3 substrates. However, N+ was found to be superior...
Book Chapter
Series: AIPP Books, Principles
Published: March 2023
10.1063/9780735424395_007
EISBN: 978-0-7354-2439-5
ISBN: 978-0-7354-2436-4
..., and magnetic materials are used to compensate for fabrication or environmental variations, enable reconfiguration, and perform sensing. Silicon is the preferred waveguide material in infrared due to its low-loss, wide industrial base and low-cost processing. Silicon nitride/oxide is also used to obtain low...
Book
Book Cover Image
Series: AIPP Books, Principles
Published: March 2023
10.1063/9780735425590
EISBN: 978-0-7354-2559-0
ISBN: 978-0-7354-2556-9
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
10.1063/9780735425033_004
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
... can be used to compensate donors to minimize parasitic channel conductance in lateral device structures, as well as provide current blocking layers in vertical structures. Doping via any growth technique should produce controllable, well-defined profiles, while being robust to growth conditions...
Book
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
10.1063/9780735425033_011
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
... to realize a high charge density 2DEG channel along with enhanced carrier mobility, offering huge opportunities for low loss high-frequency devices. Development of the state-of-the art MODFET Ga2O3 devices is discussed in terms of AGO/GO heterostructure design, electron transport...
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
0
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
... carrier concentration in MOCVD grown epitaxial β-Ga2O3 ,” APL Mater.   8 , 021110 ( 2020a ). 10.1063/1.5132752 Alema , F. , Osinsky , A. , Zhang , Y. , Mauze , A. and Speck , J. , “ Device quality β-Ga2O3 and β...
Book Chapter
Series: AIPP Books, Principles
Published: March 2023
10.1063/9780735424395_008
EISBN: 978-0-7354-2439-5
ISBN: 978-0-7354-2436-4
... of advancements in cantilever-based sensing platforms. Both cater to the ultra-low power demands of current sensing technology. The self-leveling geometry of MC allows the temperature compensation without the need of ancillary electronics and sensors, thus making it suitable for ultra-low power applications...
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
10.1063/9780735425033_005
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
... of point defects including O interstitials (Oi), O vacancies (VO), Ga interstitials (Gai), Ga vacancies (VGa), and hydrogenated Ga vacancies and show how they affect the carrier density via compensation and thereby influence...
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
0
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
.... , and Frauenheim , T. , “ Choosing the correct hybrid for defect calculations: A case study on intrinsic carrier trapping in β-Ga2O3 ,” Phys. Rev. B   95 , 075208 ( 2017 ). 10.1103/PhysRevB.95.075208 Freysoldt , C. , Grabowski , B. , Hickel , T. , Neugebauer , J...
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
0
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
... resistive GaN doped with C and Si ,” Phys. Status Solidi C   2 ( 7 ), 2411 – 2414 ( 2005a ). 10.1002/pssc.200461594 Armstrong , A. , Arehart , A. R. , and Ringel , S. A. , “ A method to determine deep level profiles in highly compensated, wide band gap semiconductors ,” J. Appl. Phys...
Book Chapter
Series: AIPP Books, Principles
Published: February 2023
0
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
.... , Bryan , I. , Bryan , Z. , Mirrielees , K. J. , Reddy , P. , Collazo , R. , Sitar , Z. , and Irving , D. L. , “ On compensation in Si-doped AlN ,” Appl. Phys. Lett.   112 ( 15 ), 152101 ( 2018 ). 10.1063/1.5022794 Harwig , T. and Schoonman , J. , “ Electrical...