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<span class="search-highlight">Band</span> diagrams of (a) valence <span class="search-highlight">band</span> and (b) conduction <span class="search-highlight">band</span> in the GaN/InGaN ...
Published: March 2023
FIG. 3.15 Band diagrams of (a) valence band and (b) conduction band in the GaN/InGaN pin structure. Carrier wavefunctions are not centrosymmetric due to polarization. E p and E n are the first bound states in the valence and conduction bands, respectively. (c) Induced sheet charge at the interfaces of QW due to polarization. More about this image found in Band diagrams of (a) valence band and (b) conduction band in the GaN/InGaN ...
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Schematic of valence <span class="search-highlight">band</span> diagram for heavy (HH) and light holes (LH) for (...
Published: March 2023
FIG. 3.17 Schematic of valence band diagram for heavy (HH) and light holes (LH) for (a) unstrained bulk layer (b) quantum confined layer without considering strain, (c) quantum confined with compressive strain, and (d) quantum confined with high tensile strain. More about this image found in Schematic of valence band diagram for heavy (HH) and light holes (LH) for (...
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<span class="search-highlight">Band</span> diagrams of the AlGaN/GaN heterostructure for HEMT. Strained AlGaN is ...
Published: March 2023
FIG. 3.20 Band diagrams of the AlGaN/GaN heterostructure for HEMT. Strained AlGaN is grown pseudomorphically on relaxed GaN. A positive polarization charge ( + σ ) is induced at the interface, which attracts electrons and forms 2DEG. More about this image found in Band diagrams of the AlGaN/GaN heterostructure for HEMT. Strained AlGaN is ...
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DF-TEM images of (a) microdomain <span class="search-highlight">band</span> and (b) lamellar-like nanodomain in P...
Published: March 2023
FIG. 5.18 DF-TEM images of (a) microdomain band and (b) lamellar-like nanodomain in PMN–PT. (c) In the schematic illustration of nanodomains in (b), ad denote the domains of four different crystallographic orientations. (d) Selected-area diffraction pattern measured with the zone axis of [1 1 ¯ 0] ( Sato et al., 2014 ). More about this image found in DF-TEM images of (a) microdomain band and (b) lamellar-like nanodomain in P...
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(a) 2-DEG wavefunction and <span class="search-highlight">band</span>-diagram corresponding to the first sub-<span class="search-highlight">band</span>...
Published: February 2023
FIG. 7.3 (a) 2-DEG wavefunction and band-diagram corresponding to the first sub-band (corresponding heterostructure is shown in the inset), and low field 2-DEG mobility as a function of (b) 2-DEG density, (c) correlation length (IFR only), and (d) aluminum fraction (alloy only). Reproduced with permission from Kumar et al., J. Appl. Phys. 128 , 105703 (2020). Copyright 2020 AIP Publishing LLC. More about this image found in (a) 2-DEG wavefunction and band-diagram corresponding to the first sub-band...
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(a) Schematic illustration of unit cell of monoclinic phase (M1) and rutile...
Published: March 2023
FIG. 4.1 (a) Schematic illustration of unit cell of monoclinic phase (M1) and rutile phase (R) ( Goodenough, 1971 ) and (b) illustration of the electronic band structure of the M1 phase and R phase ( Lee et al., 2020 ). More about this image found in (a) Schematic illustration of unit cell of monoclinic phase (M1) and rutile...
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(a) Conduction <span class="search-highlight">band</span> offsets of β-(Al<sub>x</sub>Ga<sub>1-x</sub>)<sub>2</sub>...
Published: February 2023
FIG. 1.12 (a) Conduction band offsets of β-(AlxGa1-x)2O3/Ga2O3 with alloy composition for different crystal orientations from DFT calculation and experimental XPS studies ( Mu et al., 2020 ; and Bhuiyan et al., 2021 ). (b) Alloy composition effect on formation enthalpy for β-(AlxGa1-x)2O3 alloys showing an energetically favorable monoclinic phase up to 71% Al composition. For Al composition x > 0.71, the monoclinic phase becomes unstable and the corundum phase is the preferred crystal structure. Reproduced with permission from Peelaers et al., Appl. Phys. Lett. 112 (24), 242101 (2018). Copyright 2018 AIP Publishing LLC. More about this image found in (a) Conduction band offsets of β-(AlxGa1-x)2...
Book Chapter
Series: AIPP Books, Methods
Published: March 2023
EISBN: 978-0-7354-2574-3
ISBN: 978-0-7354-2572-9
... of semiconductors ,” in Advances in Condensed Matter Physics , edited by A. H.   Reshak ( Research Signpost , Kerala , 2009 ). Al-Douri , Y. , Abid , H. , Zaoui , A. , and Aourag , H. , “ Correlation between the ionicity character and the heteropolar band gap in semiconductors...
Book Chapter
Series: AIPP Books, Methods
Published: March 2023
10.1063/9780735425743_006
EISBN: 978-0-7354-2574-3
ISBN: 978-0-7354-2572-9
... ( Al-Douri et al., 2011 ). The indirect Eg between maximum of valence band (VBM) at point Γ and minimum of conduction band (CBM) at point X is calculated using FP-LAPW. So, to utilize our recent model ( Al-Douri, 2009 ), the equation for calculating quantum dot () potential...
Book Chapter
Series: AIPP Books, Principles
Published: March 2023
10.1063/9780735425590_002
EISBN: 978-0-7354-2559-0
ISBN: 978-0-7354-2556-9
..., recently they are being employed to solids as well and are known to predict the band gaps of semiconductors accurately, (2.10) E XC HSE = α E X HF,SR ( ω ) + ( 1 − α ) E X GGA,SR ( ω ) + E X GGA,LR ( ω ) + E C GGA . In the above equation, α...
Book Chapter
Series: AIPP Books, Principles
Published: March 2023
10.1063/9780735425590_003
EISBN: 978-0-7354-2559-0
ISBN: 978-0-7354-2556-9
... on their physical nature, could be either of in-plane biaxial and/or longitudinal uniaxial out-of-plane. For a specific semiconductor, one type of strain could dominate the other. For example, in the case of Si, both of these strains split Si's conduction band; however, for germanium (Ge), only the longitudinal...
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(a) MIS β-Ga<sub>2</sub>O<sub>3</sub> diode with extreme-κ dielectric BaTiO...
Published: February 2023
FIG. 1.19 (a) MIS β-Ga2O3 diode with extreme-κ dielectric BaTiO3, and the band profile at large reverse bias in (b) conventional Schottky diodes showing electron tunneling effects through thin triangular barrier (c) in BaTiO3 MIS diodes showing that the flat conduction band profile in BaTiO3 can effectively block tunneling electrons. The EC, EV, and Ef indicate the conduction band, valence band, and Fermi level in the band diagram, respectively ( Xia et al., 2019 ). More about this image found in (a) MIS β-Ga2O3 diode with extreme-κ dielectric BaTiO...
Book Chapter
Series: AIPP Books, Principles
Published: March 2023
10.1063/9780735425590_004
EISBN: 978-0-7354-2559-0
ISBN: 978-0-7354-2556-9
... band structure and charge carrier mobility and hence the electrical resistance can be tuned by hydrostatic pressure and lattice strain. Mechanisms based on piezoresistance and/or stress-induced phase transition have been considered for understanding the stress effect on the electrical properties...
Book Chapter
Series: AIPP Books, Principles
Published: March 2023
0
EISBN: 978-0-7354-2559-0
ISBN: 978-0-7354-2556-9
...References References Akhade , S. A. and Kitchin , J. R. , “ Effects of strain, d-band filling, and oxidation state on the surface electronic structure and reactivity of 3d perovskite surfaces ,” J. Chem. Phys.   137 , 084703 ( 2012 ). 10.1063/1.4746117 Angel , R. J...
Book Chapter
Series: AIPP Books, Principles
Published: March 2023
0
EISBN: 978-0-7354-2559-0
ISBN: 978-0-7354-2556-9
... evolution in GaN grown by metalorganic chemical vapor deposition ,” Jpn. J. Appl. Phys.   37 , 4460 – 4466 ( 1998 ). 10.1143/JJAP.37.4460 Fischetti , M. V. and Laux , S. E. , “ Band structure, deformation potentials, and carrier mobility in strained Si Ge, and SiGe alloys ,” J. Appl...
Book
Book Cover Image
Series: AIPP Books, Principles
Published: March 2023
10.1063/9780735425590
EISBN: 978-0-7354-2559-0
ISBN: 978-0-7354-2556-9
Book Chapter
Series: AIPP Books, Principles
Published: March 2023
10.1063/9780735425590_frontmatter
EISBN: 978-0-7354-2559-0
ISBN: 978-0-7354-2556-9
... determines the electronic band structure and electronic transitions. However, under strained conditions, the electronic structure is known to get altered, which effectively alters the electron transport and electronic transitions in optoelectronic materials. This book is an effort to discuss strain...