FIG. 2.8 (a) Thermal expansion coefficient of monoatomic two-dimensional honeycomb lattices of graphene, silicene, germanene, and phosphorene and (b) strain-dependent phonon frequency of GaSe. Reproduced with permission from Ge et al., Phys. Rev. B 94 , 165433 (2016). Copyright 2016 American Physical Society; and Longuinhos and Ribeiro-Soares, Phys. Rev. Appl. 11 , 024012 (2019). Copyright 2019 American Physical Society. More about this image found in (a) Thermal expansion coefficient of monoatomic two-dimensional honeycomb l...

FIG. 7.2 Velocity and the impact ionization rates from Monte Carlo. (a) The velocity-field curves in β-Ga₂O₃ for three different directions at room temperature. Reproduced with permission from Ghosh and Singisetti, J. Appl. Phys. 122 , 035702 (2017a). Copyright 2017a AIP Publishing LLC. (b) Electronic bands in β-Ga₂O₃ computed under DFT. The conduction bands are scissor shifted to match the experimental bandgap. Reproduced with permission from Ghosh and Singisetti, J. Appl. Phys. 124 , 085707 (2018). Copyright 2020 AIP Publishing LLC. (c) The ionization rates along the two high-symmetry directions in the Brillouin zone. Reproduced with permission from Ghosh and Singisetti, J. Appl. Phys. 124 , 085707 (2018). Copyright 2020 AIP Publishing LLC. (d) The ionization rates with respect to energy for all the k points in the Brillouin zone. Reproduced with permission from Ghosh and Singisetti, J. Appl. Phys. 124 , 085707 (2018). Copyright 2020 AIP Publishing LLC. More about this image found in Velocity and the impact ionization rates from Monte Carlo. (a) The velocity...

FIG. 7.1 Overview of low field mobility. (a) The conventional unit cell of β-Ga₂O₃ with the Cartesian direction convention followed in this chapter. Reproduced with permission from Ghosh and Singisetti, J. Appl. Phys. 122 , 035702 (2017a). Copyright 2017a AIP Publishing LLC. (b) The calculated scattering strength of different POP phonon modes for three different electron energies. Reproduced with permission from Ghosh and Singisetti, Appl. Phys. Lett. 109 , 072102 (2016). (c) Dependence of electron mobility with temperature and comparison with experimentally measured Hall mobility. Reproduced with permission from Ghosh and Singisetti, Appl. Phys. Lett. 109 , 072102 (2016). Copyright 2016 AIP Publishing LLC. (d) Dependence of electron mobility on electron concentration for two different directions. Triangles indicate phonon only scattering limited mobility, while circles represent the mobility including both phonon and impurity scatterings. Reproduced with permission from Ghosh and Singisetti, J. Mater. Res. 32 , 4142–4152 (2017b). Copyright 2016 Springer Nature. More about this image found in Overview of low field mobility. (a) The conventional unit cell of β-Ga...

FIG. 8.18 Schematic of a β-Ga₂O₃ SBD terminated with p-NiO FLRs alongside an unterminated device. Reprinted with permission from Gong et al., Appl. Phys. Lett. 118 (20), 202102 (2021). Copyright 2021 AIP publishing LLC. More about this image found in Schematic of a β-Ga₂O₃ SBD terminated with p...

FIG. 9.4 SEM images of Ga₂O₃ ICP dry etched with (a) Cl₂/Ar and (b) BCl₃/Ar. Reprinted with permission from Pearton et al., Appl. Phys. Rev. 5 (1), 011301 (2018). Copyright 2018 AIP Publishing LLC. More about this image found in SEM images of Ga₂O₃ ICP dry etched with (a) Cl₂...

FIG. 11.2 Comparison of measured sheet charge and Si density from CV and SIMS, respectively. Reproduced with permission from Ranga et al., Appl. Phys. Express 13 (4), 045501 ( 2020b ). Copyright 2020 The Japan Society of Applied Physics. More about this image found in Comparison of measured sheet charge and Si density from CV and SIMS, respec...

FIG. 8.6 (a) A closed membrane type MEMS-based gas sensor with Si₃N₄ as passivation layer and nanostructured SnO₂ hollow sphere array. Reprinted with permission from Rao et al., ACS Appl. Mater. Interfaces 9 (3), 2634–2641 (2017). Copyright 2017 American Chemical Society. (b) Another closed membrane type microheater design with SiO₂ passivation layer and transparent ITO electrodes with ZnO nanowires as sensing element. Reprinted with permission from Hsueh et al., Sens. Actuators B Chem. 304 , 127319 (2020). Copyright 2020 Elsevier. (c) Top view and section view of a suspended membrane type structure of microheater design. Reprinted with permission from Zhou et al., Sens. Actuators A 223 , 67–75 (2015). Copyright 2015 Elsevier. More about this image found in (a) A closed membrane type MEMS-based gas sensor with Si₃N₄...

FIG. 3.8 Growth rate vs TMGa molar flow rate for Ga₂O₃ films grown using Agilis 500 and 700. Reprinted from Seryogin et al., Appl. Phys. Lett. 117 , 262101 (2020). Copyright 2020 AIP Publishing LLC. More about this image found in Growth rate vs TMGa molar flow rate for Ga₂O₃ films g...

FIG. 4.5 Temperature dependence of carrier concentration and mobility measured by Hall for the Sn-doped film grown by MOCATAXY. Reproduced with permission from Mauze et al., Appl. Phys. Lett. 117 (22), 222102 (2020a). Copyright 2020a AIP Publishing LLC. More about this image found in Temperature dependence of carrier concentration and mobility measured by Ha...

FIG. 5.14 Phase diagram of surface reconstructions on the Ga₂O₃(010) surface as a function of Ga and Al chemical potentials. Adapted with permission from Wang et al., ACS Appl. Mater. Interfaces 13 (8), 10650–10655 (2021). Copyright 2021 ACS. More about this image found in Phase diagram of surface reconstructions on the Ga₂O₃...

FIG. 10.5 Sheet resistance of nitrogen implanted β-Ga₂O₃ measured at T = 25 °C as a function of annealing temperature. Reprinted with permission from Tetzner et al., Appl. Phys. Lett. 113 , 172104 (2018). Copyright 2018 AIP Publishing LLC. More about this image found in Sheet resistance of nitrogen implanted β-Ga₂O₃ measur...