Search Results for Semiconductor lasers

.... C. , and Michel , J. , “ Monolithic Ge-on-Si lasers for large-scale electronic–photonic integration ,” Semicond. Sci. Technol.   27 , 094006 ( 2012 ). 10.1088/0268-1242/27/9/094006 Long , D. , “ Effects of pressure on the electrical properties of semiconductors ,” Phys. Rev...

.../1.3673854 Carlson , R. O. , Slack , G. A. , and Silverman , S. J. , “ Thermal conductivity of GaAs and GaAs_1−xP_x laser semiconductors ,” J. Appl. Phys.   36 ( 2 ), 505 – 507 ( 1965 ). 10.1063/1.1714018 Chae , J. , An , S. , Ramer , G...

...This chapter provides a comprehensive overview of the impact of strains on the properties of several semiconductor materials and devices. Based on the type of semiconductor materials, we have divided the chapter into two parts. The first part will focus on the general introduction of strain...

... and Dziedzic, 1977 ). Ring/disk resonators being a particular class of such traveling wave cavity ( Marcatili, 1969 ; Little et al., 1997 ; and Park et al., 1997 ), have gained importance after the development of semiconductor diode lasers and optical fibers ( Kafka et al., 1989...

... known and find applications in MEMS devices. The bandgap of the semiconductor varies from 1.29 eV to 1.9 eV and depends on the number of layers present. The control of MOS₂ layers in a very fine way using the atomic layer etching technique is used. ALE is generally a clean process which...

.... Moreover, the virtue of MEMS fabrication being compatible with complementary metal-oxide semiconductor (CMOS) fabrication technology allows multiple MEMS sensors ( Basu et al., 2019e ), actuators, and resonators ( Basu et al., 2016 , 2021c ) to be batch fabricated, enabling mass...

... ( 2017 ). 10.1016/j.snb.2016.07.157 Bârsan , N. , Huebner , M. , and Weimar , U. , “ Conduction mechanism in semiconducting metal oxide sensing films: Impact on transduction ,” in Semiconductor Gas Sensors ( Elsevier , 2020 ), pp. 39 – 69 . Barton , R. A. , Parpia , J...

... metal oxide sensing films: Impact on transduction ,” in Semiconductor Gas Sensors ( Elsevier , 2020 ), pp. 39 – 69 . Barton , R. A. , Parpia , J. , and Craighead , H. G. , “ Fabrication and performance of graphene nanoelectromechanical systems ,” J. Vac. Sci. Technol. B   29 ( 5...

.... , “ Gallium oxide (Ga₂O₃) metal-semiconductor field-effect transistors on single-crystal β-Ga₂O₃ (010) substrates ,” Appl. Phys. Lett.   100 ( 1 ), 013504 ( 2012 ). 10.1063/1.3674287 Hill , V. G. , Roy , R. , and Osborn , E. F. , “ The system...

.... , Kousseff , C. J. , and Nielsen , C. B. , “ Organic semiconductors for biological sensing ,” J. Mater. Chem. C   7 ( 5 ), 1111 – 1130 ( 2019 ). 10.1039/C8TC05900D Bravata , D. M. , Smith-Spangler , C. , Sundaram , V. , Gienger , A. L. , Lin , N. , Lewis , R...

... al., 2016 , 2019a , 2019b , 2019c , 2019d , 2019f , 2020a , 2020b , 2021a , 2021b , 2021c ; and Bhattacharya et al., 2019 , 2021 ) due to the widespread use in automotive and aerospace industries ( Barker, 2007 ). The International Technology Roadmap for semiconductors has...

... and Band Structure of VO₂ The interaction between lattice strain and electronic structure changes leading to the conductance modulation in semiconductors is of long-standing interest in materials science and has potential applications in piezoresistive strain gauges, pressure sensors...

... Choi , Y. H. , Baik , K. H. , Kim , S. , and Kim , J. , “ Photoelectrochemical etching of ultra-wide bandgap β-Ga₂O₃ semiconductor in phosphoric acid and its optoelectronic device application ,” Appl. Surf. Sci.   539 , 148130 ( 2021 ). 10.1016/j.apsusc...

... ), Heterojunction FETs ( Moll et al., 1988 ), light-emitting diodes ( Wang et al., 2020 ), and lasers ( Schubert et al., 1989 ). Delta doping was widely studied in III-V and group IV semiconductors such as Silicon ( Gossmann and Schubert, 1993 ), Gallium Arsenide ( Wilks et al...

...Arias-Purdue, A., Mehrotra, V., Neft, C., Chabak, K. D., Green, A. J., Liddy, K. J., Shinohara, K., and Urteaga, M. E., “Future prospect of β-Ga₂O₃: Materials, devices and circuit applications,” in Ultrawide Bandgap β-Ga₂O₃ Semiconductor: Theory...

... Electronics, ISNE 2018 ( IEEE , 2018 ), pp. 1 – 2 . Liu , H. , Zhang , L. , Li , K. H. H. , and Tan , O. K. , “ Microhotplates for metal oxide semiconductor gas sensor applications-towards the CMOS-MEMS monolithic approach ,” Micromachines   9 ( 11 ), 557 ( 2018b ). 10.3390...

... semiconductors, if acceptor-like unoccupied electronic states, which are often referred to as interface states, are formed at a GB, the interface states trap electrons from the adjacent grains and the GB becomes negatively charged. As a result, a DSB is formed, which can be resistive against electric...

...Blevins, J. D. and Thomson, D., “β-Ga₂O₃ bulk growth techniques,” in Ultrawide Bandgap β-Ga₂O₃ Semiconductor: Theory and Applications, edited by J. S. Speck and E. Farzana (AIP Publishing, Melville, New York, 2023), pp. 2-1–2-26. FIG. 2.1 CZ puller...