..., and all other industries reliant on semiconductors. Semiconductor device defects (Electronics) Metal-oxide-semiconductor (Society and organization) Semiconductors (Condensed matter physics) ...

..., and all other industries reliant on semiconductors. Semiconductor device defects (Electronics) Metal-oxide-semiconductor (Society and organization) Semiconductors (Condensed matter physics) About the Editors James S. Speck, Ph.D., is a Distinguished Professor and Seoul Viosys Chair in the Materials...

...Nag, D. and Laha, A., “Impact of strain on the electronic and optoelectronic properties of III-nitride semiconductor heterostructures,” in Strain Engineering in Functional Materials and Devices, edited by R. Ramadurai and S. Bhattacharyya (AIP Publishing, Melville, New York, 2023), pp. 3-1...

....2018.09.012 Krishnamohan , T. , Kim , D. , Jungemann , C. , Pham , A. T. , Meinerzhagen , B. , Nishi , Y. , and Saraswat , K. C. , “ High performance, strained-Ge, heterostructure p-MOSFETs ,” in Simulation of Semiconductor Processes and Devices , edited by T.   Grasser...

... the semiconductor industry even today due to the material's abundance, well-characterized electronic structure and properties, precise control over their composition and ability to grow high pure crystals. However, silicon needs to be replaced with new materials as it is fast approaching its fundamental limit...

...-Ga₂O₃ devices. Introduction Ultra-wide bandgap (UWBG) semiconductors are being intensely researched and are emerging as a promising candidate for high-power devices and high-speed electronics, power amplifiers, electric vehicles, and deep ultraviolet solar-blind detectors ( Higashiwaki et al...

... of Semiconductors: Majority Carriers and Electron States ( Academic Press Limited , San Diego, CA , 1992 ). Ceschia , M. , Paccagnella , A. , Cester , A. , Scarpa , A. , and Ghidini , G. , “ Radiation induced leakage current and stress induced leakage current in ultra-thin gate oxides...

... of Semiconductors ( Springer , 2020 ). Quane , D. , “ Crystal lattice energy and the Madelung constant ,” J. Chem. Educ.   47 ( 5 ), 396 ( 1970 ). 10.1021/ed047p396 Rao Mannepalli , V. and Ramadurai , R. , “ Studies on local structural inhomogeneity and origin of ferroelectricity...

...Power semiconductors have created a widespread interest to address the global energy crisis with low-loss devices towards realization of a green economy. The growing demand of high-power electronics for application in the automobile industry, communication, and high-voltage grids have already...

... activation efficiency. Isolation implantation Ion implantation can also be used to reduce the electrical conductivity of semiconductors. This is an important process module for laterally isolating electronic device regions from each other on a processed wafer. In contrast to the commonly carried out mesa...

... for spintronic applications. These constitute a wide class of materials such as metals, semiconductors, ceramics, and polymers. With the advent of electronics and due to their ability to harvest light, semiconducting materials such as silicon, gallium arsenide, and transition metal (TM) chalcogenides have...

.... An essential requirement of all power semiconductor devices is the ability to withstand a large terminal voltage with minimal leakage current in the off-state. High-voltage SBD structures contain a thick, lightly doped (typically n-type due to the higher mobility of electrons) drift layer formed...

.... Sci. Technol.   35 ( 1 ), 013002 ( 2019 ). 10.1088/1361-6641/ab55fe Chow , T. P. , Omura , I. , Higashiwaki , M. , Kawarada , H. , and Pala , V. , “ Smart power devices and ICs using GaAs and wide and extreme bandgap semiconductors ,” IEEE Trans. Electron Devices   64 ( 3...

.... Engineering lattice strain to influence metal insulator transition in functional oxides has received significant attention in the recent past. While the strain effect on electronic band structure and semiconductor devices triggered the research in this direction, the emergence of several new phenomena makes...

... semiconductors, silicon is perhaps the most popular choice for fabricating MEMS devices. Silicon acts as a substrate for the sensors, and a part of the interface electronics remains integrated with silicon. It is also possible to induce piezoresistivity in elastomers, and it is achieved by adding conductive...

... that either overlap with the host states or occur within the bandgap of a semiconductor or insulator. Knowledge of these defect-induced energy-level positions relative to the band edges is key to understanding the electronic behavior of a given dopant. In Chap. 5, we described first-principles-based...

.... , Moore , W. , McGlone , J. F.   , “ Electrostatic engineering using extreme permittivity materials for ultra-wide bandgap semiconductor transistors ,” IEEE Trans. Electron Devices   68 ( 1 ), 29 – 35 ( 2021a ). 10.1109/TED.2020.3037271 Kalarickal , N. K. , Xia , Z. , Huang , H...

...–semiconductor field-effect transistors ,” IEEE Trans. Electron Devices   66 ( 12 ), 5360 – 5366 ( 2019 ). 10.1109/TED.2019.2944628 Kumar , N. , Vaca , D. , Joishi , C. , Xia , Z. , Rajan , S. , and Kumar , S. , “ Ultrafast thermoreflectance imaging and electrothermal modeling...